FDD4243(UMW)

UMW R FDD4243 P-Channel MOSFET Features „ VDS (V) =-40V „ RDS(ON) < 44mΩ (VGS =-10V) „ RDS(ON) < 64mΩ (VGS =-4.5V) „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant General Description This P-Channel MOSFET has been produced technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. S Application G „ Inverter „ Power Supplies D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter Symbol VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current ID PD TJ, TSTG Units V ±20 V -Continuous (Package limited) TC= 25°C -Continuous (Silicon limited) TC= 25°C (Note 1) -24 -Continuous TA= 25°C (Note 1a) -6.7 -14 -Pulsed EAS Ratings -40 A -60 Single Pulse Avalanche Energy (Note 3) Power Dissipation TC= 25°C Power Dissipation 84 42 (Note 1a) Operating and Storage Junction Temperature Range 3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient www.umw-ic.com 3.0 (Note 1a) 1 40 °C/W UTD Semiconductor Co.,Limited UMW R FDD4243 P-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V -40 -32 VDS = -32V, VGS = 0V mV/°C -1 TJ = 125°C -100 VGS = ±20V, VDS = 0V µA ±100 nA -3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 4.7 rDS(on) Drain to Source On Resistance VGS = -10V, ID = -6.7A 36 44 VGS = -4.5V, ID = -5.5A 48 64 gFS Forward Transconductance VDS = -5V, ID = -6.7A 16 -1.4 -1.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz 1165 1550 pF 165 220 pF 90 135 pF Ω f = 1MHz 4 VDD = -20V, ID = -6.7A VGS = -10V, RGEN = 6Ω 6 12 ns 15 26 ns 22 35 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 7 14 ns Qg(TOT) Total Gate Charge at 10V 21 29 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = -20V, ID = -6.7A VGS = -10V 3.4 nC 4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -6.7A (Note 2) IF = -6.7A, di/dt = 100A/µs 0.86 1.2 V 29 43 ns 30 44 nC Notes: 1: RθJA is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJC is determined by the user’s board design. a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 7.5A, VDD = 40V, VGS = 10V. www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R FDD4243 P-Channel MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 50 40 3.5 VGS = -10V VGS = -4.5V VGS = - 6V VGS = -5V VGS = -4V 30 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 VGS = - 3.0V 10 0 0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 60 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 ID = -6.7A VGS = -10V 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 40 TJ = 150oC TJ = 25oC 30 20 TJ = -55oC 10 0 1 VGS = -5V VGS = -6V 2.0 1.5 VGS = -10V 1.0 0.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 10 20 30 40 -ID, DRAIN CURRENT(A) 50 60 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 100 80 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = 125oC 60 TJ = 25oC 40 20 2 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 30 VGS = 0V 10 TJ = 150oC TJ = 25oC 1 TJ = -55oC 0.1 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics www.umw-ic.com ID = -6.7A Figure 4. On-Resistance vs Gate to Source Voltage 60 50 VGS = -4.5V 2.5 120 1.8 1.6 VGS = -4V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics VGS = -3.0V 3.0 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 UTD Semiconductor Co.,Limited UMW R FDD4243 P-Channel MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 3000 ID = -6.7A 6 CAPACITANCE (pF) VDD = -10V 8 VDD = -20V VDD = -30V 4 2 0 1000 Coss 100 0 4 8 12 16 20 50 0.1 24 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Crss 30 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 25 8 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) f = 1MHz VGS = 0V Figure 8. Capacitance vs Drain to Source Voltage 10 6 TJ = 25oC 4 2 TJ = 125oC 20 VGS = -10V 15 10 Limited by Package VGS = -4.5V 5 o RθJC = 3.0 C/W 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 10 0 25 30 75 100 125 150 o Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 P(PK), PEAK TRANSIENT POWER (W) 100 100us 10 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 0.5 50 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability -ID, DRAIN CURRENT (A) Ciss 1 SINGLE PULSE TJ = MAX RATED 100ms TC = 25OC 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area www.umw-ic.com FOR TEMPERATURES VGS = -10V ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 150 – TC ---------------------125 I = I25 TC = 25oC 100 SINGLE PULSE 30 -5 10 -4 10 -3 -2 -1 10 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 UTD Semiconductor Co.,Limited R UMW FDD4243 P-Channel MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 SINGLE PULSE 0.003 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve www.umw-ic.com 5 UTD Semiconductor Co.,Limited UMW R FDD4243 P-Channel MOSFET Package Mechanical Data TO-252 E A B2 Dimensions C2 L V1 Ref. Millimeters H D Min. C B G V2 D1 V1 E1 A2 V1 L2 Min. Typ. Max. A 2.10 2.50 0.083 0.098 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 5.30REF E 6.40 E1 4.63 0.248 0.209REF 6.80 0.252 0.268 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 6° 0° 7° V1 DETAIL A Inches Max. A2 D1 DETAIL A Typ. V2 0° 7° 6° Marking Ordering information Order code UMW FDD4243 www.umw-ic.com Package TO-252 6 Baseqty Deliverymode 2500 Tape and reel UTD Semiconductor Co.,Limited