SFM3011T

SFM3011T 110A, 30V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFM3011T uses advanced trench technology and design to provide excellent RDS(pn) with low gate charge. It can be used in a wide variety applications. Features ◆VDS=30V,ID=110A ◆RDS(on) TYP:3.9mΩ@VGS=10V ID=20A Applications ◆Power faction correction (PFC) ◆Switched mode power supplies (SMPS) ◆Uninterruptible power supply (UPS) ◆LED lighting power ORDERING INFORMATION Part No. Package Marking Material Packing SFM3011T PDFN-5*6-8L SFM3011T Pb Free Reel Http://www.hi-semicon.com Rev 1.1 Page 1 of 8 SFM3011T ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TC = 25C Drain Current 110 ID TC = 100C Drain Current Pulsed(Note 1) A 75 IDM 440 A PD 90 W EAS 392 mJ Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C TL 300 ℃ Symbol MAX Unit Thermal Resistance, Junction-to-Case RθJC 2.6 Thermal Resistance, Junction-to-Ambient RθJA 62.5 Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 2) Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds THERMAL CHARACTERISTICS Characteristics C/W ELECTRICAL CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit BVDSS VGS=0V, ID=250µA 30 -- -- V Drain-Source Leakage Current IDSS VDS=30V, VGS=0V -- -- 1 uA Gate-Source Leakage Current IGSS VGS=20V, VDS=0V -- -- 100 Gate-Source Leakage Current IGSS VGS=-20V, VDS=0V -- -- -100 VGS(th) VGS= VDS, ID=250µA 1.0 1.7 2.5 VGS=4.5V, ID=20A -- 5.2 7.5 VGS=10V, ID=20A -- 3.9 5.0 Off Characteristics Drain -Source Breakdown Voltage nA On Characteristics Gate Threshold Voltage Static Drain- Source On State Resistance RDS(on) V m Dynamic Characteristics Gate Resistance Rg VGS=0V, f=1.0MHZ 1 2.7 10 Input Capacitance Ciss VDS=25V -- 2010 -- Output Capacitance Coss VGS=0V -- 241 -- Crss f=1.0MHZ -- 214 -- -- 10.6 -- -- 73.2 -- -- 121 -- -- 56 -- Reverse Transfer Capacitance  pF Switching Characteristics Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time Http://www.hi-semicon.com tf VDD=15V RG=3.3, ID=30A (Note 3.4) Rev 1.1 ns Page 2 of 8 SFM3011T Total Gate Charge Qg VDS=15V, ID=30A -- 45 -- Gate-Source Charge Qgs VGS=5V -- 8.6 -- Gate-Drain Charge Qgd -- 9.5 -- (Note 3.4) nc SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Continuous Source Current Symbol IS Test conditions Min. Typ. Max. Integral Reverse P-N -- -- 110 -- -- 440 Junction Diode in the Unit A Pulsed Source Current ISM Diode Forward Voltage VSD IS=20A,VGS=0V -- 0.8 1.2 V Reverse Recovery Time Trr IF=10A,VR=15V, -- 146 -- ns Reverse Recovery Charge Qrr dIF/dt=100A/µS -- 7.6 -- µC MOSFET 1.Pluse width limited by maximum junction temperature 2.L=1mH,VDD=15V, VG=10V, RG=25, starting TJ=25C 3.Pulse Test: Pulse width ≤300μs, Duty cycle≤2% 4.Essentially independent of operating temperature Http://www.hi-semicon.com Rev 1.1 Page 3 of 8 SFM3011T Typical Performance Characteristics Http://www.hi-semicon.com Rev 1.1 Page 4 of 8 SFM3011T Typical Performance Characteristics Http://www.hi-semicon.com Rev 1.1 Page 5 of 8 SFM3011T Test Circuit Http://www.hi-semicon.com Rev 1.1 Page 6 of 8 SFM3011T Package Dimensions of PDFN5*6-8L Http://www.hi-semicon.com Rev 1.1 Page 7 of 8 SFM3011T Disclaimer: ► Hi-semicon reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ► All semiconductor products malfunction or fail with some probability under special conditions. When using Hisemicon products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Hi-semicon products could cause loss of body injury or damage to property. ► Hi-semicon will supply the best possible product for customers! Http://www.hi-semicon.com Rev 1.1 Page 8 of 8