BE2F5VB2

BE2F5VB2 Bi-directional 1 Line ESD Protection Description The BE2F5VB2 is a bi-directional ESD protection http//:www.szbetterwin.com diode designed to protect sensitive electronic components which are connected to low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. The BE2F5VB2 may be used to provide ESD protection up to ±30kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up DFN1006-2L（Bottom View） to 8A (8/20μs) according to IEC61000-4-5. The BE2F5VB2 is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Features ◆ Working voltage: 5V ◆ DFN1006-2L Package Circuit Diagram ◆ Transient protection for data lines to IEC61000-4-2 (ESD) ±30kV (air)， ±30kV (contact) IEC61000-4-5 (Surge) 8A (8/20us) IEC61000-4-4（EFT）40A（5/50ns） ◆ Low leakage current ◆ Low clamping voltage ◆ Solid-state silicon-avalanche technology Marking（Top View） Applications ◆ Personal digital assistants (PDA's) ◆ Notebooks, Desktops, and Servers Order Information ◆ Cell phone Handsets and Accessories Device Package ◆ Portable Electronics BE2F5VB2 DFN1006-2L Shipping 10000/Tape&Reel ◆ Peripherals Rev.1.0 1 www.szbetterwin.com BE2F5VB2 Definitions of electrical characteristics Symbol Parameter VRWM Reverse Stand-off Voltage IR Reverse Leakage Current @ VRWM VBR Reverse Breakdown Voltage @ IT IR Reverse Breakdown Current IPP Reverse Peak Pulse Current VC Clamping Voltage @ IPP Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tP = 8/20μS ) PPK 90 W Peak Pulse Currentr ( tP = 8/20μS ) Ipp 8 A ±30 kV ±30 kV TL 260 (10 sec) ℃ Operating Temperature TOP -55 to +125 ℃ Storage Temperature TSTG -55 to +150 ℃ ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Lead Soldering Temperature Electrical Characteristics (Ta=25℃, unless otherwise noted) Parameter Symbol Reverse Stand-off Voltage VRWM Reverse Leakage Current IR VRWM =5V Reverse Breakdown Voltage VBR IT=1mA Clamping Voltage1) Junction Capacitance VCL Cj Conditions Min. Typ. Max. Units 5 V 100 nA 5.5 V IPP=5A tP = 8/20μs 8.5 9.5 V IPP=8A tP = 8/20μs 10 12 V VR=0V f = 1MHz 14 pF Notes: 1)Non-repetitive current pulse, according to IEC61000-4-5. Rev.1.0 2 www.szbetterwin.com BE2F5VB2 Typical Characteristics (Ta=25℃, unless otherwise noted) Pulse Waveform (8/20us) Pulse Derating Curve ESD Clamping(8kV Contact Discharge ) Rev.1.0 3 www.szbetterwin.com BE2F5VB2 Package Outline Dimensions (DFN1006-2L） Dim Inches Millimeters MIN MAX MIN MAX A 0.018 0.020 0.46 0.51 B 0.000 0.002 0 0.05 C 0.037 0.041 0.95 1.05 D 0.022 0.025 0.55 0.65 E 0.017 0.021 0.45 0.55 F 0.008 0.012 0.20 0.30 H R 0.015Typ. 0.001 0.005 0.40Typ 0.05 0.15 Recommend Land Pattern (Unit: mm) Note: This recommended land pattern is for reference purpose only. Rev.1.0 4 www.szbetterwin.com BE2F5VB2 Load with information Unit：mm .1.0 5 www.szbetterwin.com