BE6TLC5VU
Low Capacitance ESD Array
Description
BE6TLC5VU TVS diode is designed to protect high
speed data interfaces. It has been specifically
designed protect sensitive electronic components
which are connected to data and transmission lines
from overvoltage caused by ESD (Electrostatic
Discharge), EFT (Electrical Fast Transients) and
Lighting.
BE6TLC5VU incorporates eight low capacitance
steering diodes and a TVS diode in a single package.
The BE6TLC5VU is in a SOT23-6L package and will
protect four high-speed lines and one VDD line. It
may be used to provide ESD protection up to ±20kV
Contact and ± 25kV air discharge according to
IEC61000-4-2 , and withstand peak pulse current up
to 40A(5/50ns) according to IEC61000-4-4, 6A
(8/20us) according to IEC61000-4-5.
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SOT23-6L
Circuit Diagram
Features
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Working voltage: 5V
Protect four I/O lines and one VDD line
90 Watts peak pulse power (tp=8/20us)
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±25kV (air),
±20kV (contact)
IEC 61000-4-4 (EFT)40A (8/20us)
IEC 61000-4-5 (Surge)6A (8/20us)
Low capacitance
Low clamping voltage
Low leakage current
Solid-state silicon-avalanche technology
Order Information
Applications
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Rev.1.1
Marking
USB 2.0 Power and Data Line Protection
Video Graphics Cards
Digital Visual Interface (DVI)
10/1000 Ethernet
SIM Ports
Notebook Computer
Monitors and Flat Panel Displays
IEEE 1394 Firewire Ports
1
Device
Package
Shipping
BE6TLC5VU
SOT23-6L
3000/Tape&Reel
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BE6TLC5VU
Definitions of electrical characteristics
Symbol
Parameter
VRWM
Reverse Stand-off Voltage
IR
Reverse Leakage Current @ VRWM
VBR
Reverse Breakdown Voltage @ IT
IT
Test Current
IPP
Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
IF
Forward Current
VF
Forward Voltage @ IF
Cj
Junction Capacitance
IPP
Peak Pulse Current
Absolute Maximum Rating
Rating
Symbol
Value
Units
PPK
90
W
±25
kV
±20
kV
Peak Pulse Power ( tP = 8/20μS )
ESD according to IEC61000-4-2 air discharge
VESD
ESD according to IEC61000-4-2 contact discharge
Lead Soldering Temperature
TL
260 (10 sec)
℃
Operating Temperature
TOP
-55 to +125
℃
Storage Temperature
TSTG
-55 to +150
℃
Electrical Characteristics (Ta=25℃, unless otherwise noted)
Parameter
Reverse Stand-off Voltage
Reverse Breakdown Voltage
Symbol
Conditions
IT=1mA
Reverse Leakage Current
IR
VRWM =5V
Forward voltage
VF
IT=10mA
Peak Pulse Current
IPP
tP = 8/20μs
(I/O pin to Ground)
Typ.
VRWM
VBR
Clamping Voltage
Min.
Max.
Units
5.0
V
6.0
V
0.8
1.0
μA
1.0
V
6
A
IPP=1A
tP = 8/20μs
9.5
11
V
IPP=6A
tP = 8/20μs
12.5
15
V
VR=0V
f = 1MHz,
0.5
0.7
0.9
pF
0.25
0.35
0.5
pF
VC
CI/O - GND
VDD= floated, any I/O to GND
Junction Capacitance
CI/O - I/O
Rev.1.1
VR=0V
f = 1MHz,
any I/O to I/O
2
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BE6TLC5VU
Current (%)
Peak pulse current (%)
Typical Characteristics (Ta=25℃, unless otherwise noted)
Time (ns)
Time (us)
% Rated Power
VC - Clamping voltage
(V)
Contact discharge current waveform per IEC61000-4-2
8/20 us waveform per IEC61000-4-5
Ipp - Peak pulse current (A)
TA- Ambient temperature(℃)
Power derating vs. Ambient temperature
TLP Current (A)
Clamping Voltage vs. Peak pulse current
TLP Voltage(V)
TLP Measurement
Rev.1.1
3
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BE6TLC5VU
Package Outline Dimensions (SOT23-6L)
Symbol
Millimeter
Inches
Min
Max
Min
Max
A
0.90
1.45
0.035
0.057
A1
0.00
0.15
0.000
0.006
A2
0.45
0.65
0.017
0.026
B
0.35
0.50
0.010
0.020
C
0.08
0.20
0.003
0.007
D
2.80
3.00
0.110
0.122
e
0.69
1.02
0.032
0.043
E1
1.50
1.75
0.0060
0.0069
E
L1
L
2.80BSC
0.35
0.60
0.60
0.110BSC
0.013
0.024
0.024
Recommend Land Pattern (Unit: mm)
Note:
This recommended land pattern is for reference
purpose only.
Rev.1.1
4
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