WS72551/2
WS72551/WS72552
Zero-Drift, Single-Supply, Rail-to-Rail
Input/Output Operational Amplifiers
Http//:www.willsemi.com
Descriptions
This family of amplifiers has ultra low offset, drift,
and bias current. The WS72551 and WS72552 are
SOT23-5L
SOP-8L
MSOP-8L
single and dual amplifiers featuring rail-to-rail input
and output swings respectively. All are guaranteed
to operate from 2.5V to 5V with a single supply.
OUT
1
V-
2
+IN
3
5
V+
4
-IN
+IN
1
V-
2
-IN
3
5
V+
4
OUT
The WS72551/WS72552 provides the benefits
previously found only in expensive auto-zeroing or
SOT23-5L
SOT23-5L
chopper-stabilized amplifiers. These new zero-drift
(WS72551EA-5/TR)
(WS72551E-5/TR)
amplifiers combine low cost with high accuracy. No
external capacitors are required.
With an offset voltage of only 3μV and drift of 0.008
NC
1
8
NC
OUTA
1
-IN
2
7
V+
-INA
2
+IN
3
6
OUT
V-
4
5
NC
μV/°C, the WS72551/WS72552 are perfectly suited
+INA
3
V-
4
A
B
8
V+
7
OUTB
6
-INB
5
+INB
for applications in which error sources cannot be
tolerated. Temperature,
position and pressure
SOP-8L/MSOP-8L
sensors, medical equipment, and strain gauge
SOP-8L/MSOP-8L
Pin configuration (Top view)
amplifiers benefit greatly from nearly zero drift over
their operating temperature range. The rail-to-rail
input
and
output
swings
provided
by
the
WS72551/WS72552 make both high-side and
low-side sensing easy.
2551
GAYW
2551
GEYW
WLSI
2551
GSYW
SOT23-5L
SOT23-5L
SOP-8L
2551
GMYW
WLSI
2552
GSYW
2552
GMYW
MSOP-8L
SOP-8L
MSOP-8L
The WS72551/WS72552 are specified for the
extended industrial/automotive temperature range
(-40°C to +125°C). The WS72551 single amplifier is
available in 8-lead MSOP, 8-lead narrow SOIC and
5-lead SOT23-5L packages. The WS72552 dual
amplifier is available in 8-lead MSOP and 8-lead
narrow SOIC surface mount packages.
Will Semiconductor Ltd.
1
Mar, 2020 - Rev. 1.1
WS72551/2
Applications
Marking
Temperature sensors
2551
= Device code
Pressure sensors
2552
= Device code
Precision current sensing
GA
= Special code
Strain gauge amplifiers
GE
= Special code
Medical instrumentation
GS
= Special code
Thermocouple amplifiers
GM
= Special code
Y
= Year code
W
= Week code
Features
Low offset voltage
: 14 μV(MAX)
Input offset drift
: 0.008 μV/°C
Overload recovery time
: 150 μs
Low supply current
: 240 μA/OpAmp
High gain, CMRR, PSRR
: 130 dB
Ultralow input bias current
: 10 pA
Order information
Device
Package
Shipping
WS72551S-8/TR
SOP-8L
4000/Reel &Tape
WS72551M-8/TR
MSOP-8L
4000/Reel &Tape
No external capacitors required
WS72551EA-5/TR
SOT23-5L
3000/Reel &Tape
5 V/2.5 V single-supply operation
WS72551E-5/TR
SOT23-5L
3000/Reel &Tape
Rail-to-rail input and output swing
WS72552S-8/TR
SOP-8L
4000/Reel &Tape
WS72552M-8/TR
MSOP-8L
4000/Reel &Tape
Will Semiconductor Ltd.
2
Mar, 2020 - Rev. 1.1
WS72551/2
Pin Descriptions
WS72551S-8/TR and
WS72551M-8/TR
WS72551EA-5/TR
WS72551E-5/TR
WS72552S-8/TR and
WS72552M-8/TR
Will Semiconductor Ltd.
Pin Number
Symbol
1
NC
2
-IN
Inverting input
3
+IN
Non-inverting input
4
V-
5
NC
6
OUT
7
V+
8
NC
Pin Number
Symbol
1
OUT
2
V-
3
+IN
Non-inverting input
4
-IN
Inverting input
5
V+
Positive supply
Pin Number
Symbol
1
+IN
2
V-
Negative supply
3
-IN
Inverting input
4
OUT
5
V+
Pin Number
Symbol
1
OUTA
2
-INA
Inverting input
3
+INA
Non-inverting input
4
V-
5
+INB
Non-inverting input
6
-INB
Inverting input
7
OUTB
8
V+
3
Descriptions
Negative supply
Output
Positive supply
Descriptions
Output
Negative supply
Descriptions
Non-inverting input
Output
Positive supply
Descriptions
Output
Negative supply
Output
Positive supply
Mar, 2020 - Rev. 1.1
WS72551/2
Absolute Maximum Ratings
(1)
Parameter
Rating
Unit
6
V
GND-0.2V to Vs+0.2
V
Differential Input Voltage
±5.0
V
ESD (Human Body Model)
7000
V
Supply Voltage
(2)
Input Voltage
Output Short-Circuit Duration to GND
Indefinite
/
°
C
Storage Temperature Range
-65 to +150
Junction Temperature Range
-65 to +150
°
300
°
-40 to +125
°
Lead Temperature Range(Soldering, 60 sec)
Operating Temperature Range
C
C
C
Note:
1.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the
device. These are only stress ratings, and functional operation of the device at these or any other
conditions beyond those indicated under recommended operating conditions are not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability.
2.
All voltage values, except differential voltage are with respect to network terminal.
ESD, Electrostatic Discharge Protection
Symbol
HBM
Parameter
Human Body Model ESD
Condition
MIL-STD-883H Method 3015.8
Minimum level
Unit
±7000
V
JEDEC-EIA/JESD22-A114A
MM
CDM
Machine Model ESD
JEDEC-EIA/JESD22-A115
±300
V
Charged Device Model ESD
JEDEC-EIA/JESD22-C101E
±2000
V
Will Semiconductor Ltd.
4
Mar, 2020 - Rev. 1.1
WS72551/2
Electronics Characteristics
VS = 5 V, VCM = 2.5 V, Vo = 2.5 V, TA = 25°C, unless otherwise noted.
Symbol
VOS
Parameter
Conditions
Min.
Offset Voltage
Input Bias Current
Common Mode Rejection Ratio
﹣40 C≤TA≤﹢125 C
0.5
nA
6
pA
﹣40 C≤TA≤﹢85 C
50
pA
﹣40 C≤TA≤﹢125 C
0.5
nA
°
°
-0.1
VCM=-0.1 V to﹢5.1V
Large Signal Voltage Gain
5.1
V
100
140
dB
100
145
dB
﹣40°C≤TA≤﹢125°C
135
dB
0.01
μV/°C
VO=0.3V to 4.7V,
AVO
μV
pA
°
°
CMRR
14
50
°
Input Voltage Range
5
﹣40 C≤TA≤﹢85 C
Input Offset Current
VCMR
Unit
pA
°
°
IOS
Max.
10
°
IB
Typ.
RL=10k
△VOS/△T
Offset Voltage Drift
﹣40 C≤TA≤﹢125 C
VOH
Output Voltage High
RL =10k to GND
6
VOL
Output Voltage Low
RL =100k to V+
4
mV
ISC
Output Short-Circuit Limit Current
±58
±70
mA
PSRR
Power Supply Rejection Ratio
100
120
dB
ISY
Supply Current / Amplifier
SR
Slew Rate
Tor
°
°
VS = 2.7V to 5V
VO=0V
265
﹣40 C≤TA≤﹢125 C
10
mV
μA
340
290
μA
1.2
V/s
Overload Recovery Time
150
us
GBP
Gain-Bandwidth Product
1.8
MHz
en p-p
Voltage Noise
0.1Hz to 10Hz
1.8
VP-P
en
Voltage Noise Density
f=1kHz
80
nV/√Hz
°
RL=10k
°
Note:
1.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the
device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device
reliability and lifetime.
2.
A heat sink may be required to keep the junction temperature below the absolute maximum rating when
the output is shorted indefinitely.
3.
Thermal resistance varies with the amount of PC board metal connected to the package. The specified
values are for short traces connected to the leads.
Will Semiconductor Ltd.
5
Mar, 2020 - Rev. 1.1
WS72551/2
Electronics Characteristics
VS = 2.5 V, VCM = 1.25 V, Vo = 1.25 V, TA = 25°C, unless otherwise noted.
Symbol
VOS
Parameter
Conditions
Min.
Offset Voltage
Input Bias Current
Unit
3
14
μV
pA
﹣40 C≤TA≤﹢85 C
40
pA
﹣40 C≤TA≤﹢125 C
0.2
nA
4
pA
°
°
°
Input Offset Current
IOS
Max.
4
°
IB
Typ.
WS72552
﹣40 C≤TA≤﹢85 C
40
pA
WS72552
﹣40 C≤TA≤﹢125 C
0.2
nA
°
°
°
°
VCMR
Input Voltage Range
-0.1
CMRR
Common Mode Rejection Ratio
AVO
Large Signal Voltage Gain
△VOS/△T
Offset Voltage Drift
﹣40°C≤TA≤﹢125°C
VOH
Output Voltage High
VOL
Output Voltage Low
ISC
Output Short-Circuit Limit Current
PSRR
Power Supply Rejection Ratio
ISY
Supply Current / Amplifier
SR
Slew Rate
VCM=0 V to﹢2.5V
100
2.6
V
140
dB
﹣40 C≤TA≤﹢125 C
°
°
VO=0.3V to 2.2V,
dB
100
140
dB
0.008
μV/°C
RL =10k to GND
10
mV
RL =10k to V﹢
10
mV
±20
mA
120
dB
RL=10k
VS = 2.7V to 5V
100
VO=0V
235
﹣40 C≤TA≤﹢125 C
μA
300
260
μA
1.2
V/s
Overload Recovery Time
160
us
GBP
Gain-Bandwidth Product
1.7
MHz
en p-p
Voltage Noise
0Hz to 10Hz
1.8
VP-P
en
Voltage Noise Density
f=1kHz
80
nV/√Hz
°
RL=10k
°
Note:
4.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the
device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device
reliability and lifetime.
5.
A heat sink may be required to keep the junction temperature below the absolute maximum rating when
the output is shorted indefinitely.
6.
Thermal resistance varies with the amount of PC board metal connected to the package. The specified
values are for short traces connected to the leads.
Will Semiconductor Ltd.
6
Mar, 2020 - Rev. 1.1
WS72551/2
Typical Characteristics
TA=25°C, VCC=5V, RL=10K, CL=100pF, unless otherwise noted.
Large-Signal Step Response, 2V Step
0.08
1.5
0.06
1.0
VIN & VOUT (V)
VIN & VOUT (V)
Small-Signal Step Response, 100mV Step
0.04
0.02
0.00
-0.02
-0.04
-0.06
0
5
10
15
0.0
-0.5
-1.0
VOUT
VIN
-0.08
-5
0.5
VOUT
VIN
-1.5
-5
20
0
5
Time (μs)
10
15
20
Time (μs)
Open-Loop Gain and Phase
Cload vs. Phase Margin
80
GAIN=20000
RLOAD=100K
Gain
Phase
120
Gain and Phase
100
70
80
60
40
50
40
30
20
20
0
10
-20
100
1000
10000
100000
Gain=10
60
Phase Margin
140
0
1000000
2000
4000
6000
8000
Frequency(Hz)
Cload(pF)
Phase Margin vs. Cload
Input Offset Voltage vs. Temperature
Iq vs. Supply Voltage
-5.0
300
VS+=2.5V
VS-=-2.5V
290
Quiescent Current (uA)
-5.5
VOS (μV)
-6.0
-6.5
-7.0
-7.5
-8.0
-8.5
-9.0
-50
10000
280
270
260
250
240
230
220
210
-25
0
25
50
75
100
200
1.00
125
Temperature( C)
VOS vs. Temperature
Will Semiconductor Ltd.
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
Supply voltage(V)
Quiescent Current vs. Supply Voltage
o
7
Mar, 2020 - Rev. 1.1
WS72551/2
Typical Characteristics (continued)
TA=25°C, VCC=5V, RL=10K, CL=100pF, unless otherwise noted.
Over Shoot Voltage, CLOAD=47nF,
Over Shoot Voltage, CLOAD=47nF,
RLOAD=10kΩ, Gain=+1
RF=2kΩ, Gain=-1
0.15
0.08
VIN & VOUT (V)
VIN & VOUT (V)
0.06
0.10
0.05
0.00
-0.05
0.00
0.09
0.18
0.02
0.00
-0.02
-0.04
-0.06
VOUT
VIN
-0.10
-0.09
0.04
VOUT
VIN
-0.08
-0.09
0.27
0.00
0.09
Time (μs)
Iq vs. Temperature
60
over shoot and Under shoot(%)
340
Quiescent Current (uA)
0.27
Over/under shoot vs. Cload
360
320
300
280
260
VS+=2.5V
VS-=-2.5V
240
220
200
-50
0.18
Time (μs)
-25
0
25
50
75
100
Gain=+1
Over shoot
Under shoot
50
40
30
20
10
0
100
125
o
Temperature( C)
Quiescent Current vs. Temperature
1000
10000
Cload(pf)
over shoot and Under shoot(%) vs. Cload
PSRR vs. Frequency
Over/under shoot vs. Cload
30
over shoot and Under shoot(%)
120
PSRR (dB)
100
80
60
40
20
0
1
10
100
1k
10k
100k
1M
15
10
5
0
200
400
600
800
1000
Cload(pf)
over shoot and Under shoot(%) vs. Cload
Frequency (Hz)
Will Semiconductor Ltd.
20
0
10M
Gain=-1
Over shoot
Under shoot
25
8
Mar, 2020 - Rev. 1.1
WS72551/2
Typical Characteristics (continued)
TA=25°C, VCC=5V, RL=10K, CL=100pF, unless otherwise noted.
THD+N vs. Vin F=20KHz
THD+N vs. Frequency
-60
-20
-40
-50
-70
THD+N(dB)
-30
THD+N(dB)
-65
VS+=2.5V
VS-=-2.5V
RLOAD=100k
CLOAD=100p
f=20KHz
Gain=1
-60
-75
VS+=2.5V
VS-=-2.5V
RLOAD=100K
CLOAD=100P
VIN+=2VPP
Gain=+1
-80
-85
-90
-70
-95
-80
-90
0.0
-100
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100
1000
10000
Frequency(Hz)
THD+Noise vs. Frequency
4.0
VIN+ (Vpp)
THD+N VS. VIN+
Input Offset Voltage Distribution(VS+=2.5V)
Input Offset Voltage Distribution(VS+=5V)
THD+Noise vs. Vin+, Gain=+1, f=1kHz,
THD+Noise vs. Vin+, Gain=100, f=20kHz,
RLOAD=100kΩ, CLOAD=100pF
RLOAD=100kΩ, CLOAD=100pF
-20
-20
VS+=2.5V
VS-=-2.5V
RLOAD=100k
CLOAD=100p
f=1KHz
Gain=1
THD+N(dB)
-40
-50
-60
-40
-70
-50
-60
-70
-80
-80
-90
-100
0.0
VS+=2.5V
VS-=-2.5V
RLOAD=100k
CLOAD=100p
f=20KHz
Gain=1
-30
THD+N(dB)
-30
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-90
0.0
4.0
VIN+ (Vpp)
THD+N VS. VIN+
Will Semiconductor Ltd.
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VIN+ (Vpp)
THD+N VS. VIN+
9
Mar, 2020 - Rev. 1.1
WS72551/2
Typical Characteristics (continued)
TA=25°C, VCC=5V, RL=10K, CL=100pF, unless otherwise noted.
THD+Noise vs. Frequency, Gain=+1,
Crosstalk, (WS72552 only)
Vin+=2Vpp RLOAD=100kΩ, CLOAD=100pF
-40
-20
VS+=2.5V
VS-=-2.5V
RLOAD=100k
CLOAD=100p
f=20KHz
Gain=1
THD+N(dB)
-40
-50
-50
Crosstalk (dB)
-30
-60
-70
-80
-90
0.0
-60
-70
-80
-90
-100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-110
10
4.0
VIN+ (Vpp)
THD+N VS. VIN+
Will Semiconductor Ltd.
100
1k
10k
100k
Frequency (Hz)
10
Mar, 2020 - Rev. 1.1
WS72551/2
PACKAGE OUTLINE DIMENSIONS
SOP-8L
D
E
E1
L
c
θ
e
SIDE VIEW
A1
TOP VIEW
A
A2
b
SIDE VIEW
Dimensions In Millimeters (mm)
Symbol
Min.
Typ.
Max.
A
1.35
1.55
1.75
A1
0.05
0.15
0.25
A2
1.25
1.40
1.65
b
0.33
-
0.51
c
0.15
-
0.26
D
4.70
4.90
5.10
E
3.70
3.90
4.10
E1
5.80
6.00
6.20
e
1.27BSC
L
0.40
-
1.27
θ
0°
-
8°
Will Semiconductor Ltd.
11
Mar, 2020 - Rev. 1.1
WS72551/2
TAPE AND REEL INFORMATION
SOP-8L
Reel Dimensions
RD
Reel Dimensions
Tape Dimensions
W
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
User Direction of Feed
RD
Reel Dimension
7inch
13inch
W
Overall width of the carrier tape
8mm
12mm
P1
Pitch between successive cavity centers
2mm
4mm
8mm
Pin1
Pin1 Quadrant
Q1
Q2
Q3
Will Semiconductor Ltd.
12
Q4
Mar, 2020 - Rev. 1.1
WS72551/2
PACKAGE OUTLINE DIMENSIONS
MSOP-8L
D
e
c
E
E1
L
b
θ
TOP VIEW
A
A2
A1
SIDE VIEW
SIDE VIEW
Symbol
Dimensions In Millimeters (mm)
Min.
Typ.
Max.
A
-
-
1.10
A1
0.02
-
0.15
A2
0.75
0.80
0.95
b
0.25
-
0.38
c
0.09
-
0.23
D
2.90
3.00
3.10
E
4.75
4.90
5.05
E1
2.90
3.00
3.10
e
0.65 BSC
L
0.40
-
0.80
θ
0°
-
6°
Will Semiconductor Ltd.
13
Mar, 2020 - Rev. 1.1
WS72551/2
TAPE AND REEL INFORMATION
MSOP-8L
Reel Dimensions
RD
Reel Dimensions
Tape Dimensions
W
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
User Direction of Feed
RD
Reel Dimension
7inch
13inch
W
Overall width of the carrier tape
8mm
12mm
P1
Pitch between successive cavity centers
2mm
4mm
8mm
Pin1
Pin1 Quadrant
Q1
Q2
Q3
Will Semiconductor Ltd.
14
Q4
Mar, 2020 - Rev. 1.1
WS72551/2
PACKAGE OUTLINE DIMENSIONS
SOT23-5L
(WS72551EA-5/TR)
D
θ
b
K
L1
L
M
E
E1
(Ⅰ)
(Ⅱ)
c
e
e1
A
A1
SIDE VIEW
A2
TOP VIEW
SIDE VIEW
Symbol
Dimensions in Millimeters
Min.
Typ.
Max.
A
-
-
1.45
A1
0.00
-
0.15
A2
0.90
1.10
1.30
b
0.30
0.40
0.50
c
0.10
-
0.21
D
2.72
2.92
3.12
E
2.60
2.80
3.00
E1
1.40
1.60
1.80
e
0.95 BSC
e1
1.90 BSC
L
0.30
0.45
0.60
M
0.10
0.15
0.25
K
0.00
-
0.25
θ
0°
-
8°
Will Semiconductor Ltd.
15
Mar, 2020 - Rev. 1.1
WS72551/2
TAPE AND REEL INFORMATION
SOT23-5L
(WS72551EA-5/TR)
Reel Dimensions
RD
Reel Dimensions
Tape Dimensions
W
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
RD
Reel Dimension
W
Overall width of the carrier tape
P1
Pitch between successive cavity centers
Pin1
Pin1 Quadrant
Will Semiconductor Ltd.
User Direction of Feed
7inch
13inch
1 8mm
12mm
16mm
2mm
4mm
8mm
Q1
Q2
Q3
16
Q4
Mar, 2020 - Rev. 1.1
WS72551/2
PACKAGE OUTLINE DIMENSIONS
SOT23-5L
(WS72551E-5/TR)
D
θ
b
K
L1
L
M
E
E1
(Ⅰ)
(Ⅱ)
c
e
e1
A
A1
SIDE VIEW
A2
TOP VIEW
SIDE VIEW
Symbol
Dimensions in Millimeters
Min.
Typ.
Max.
A
-
-
1.25
A1
0.00
-
0.15
A2
1.00
1.10
1.20
b
0.36
-
0.45
c
0.14
-
0.20
D
2.826
2.926
3.026
E
2.60
2.80
3.00
E1
1.526
1.626
1.726
e
0.90
0.95
1.00
e1
1.80
1.90
2.00
L
0.30
0.40
0.60
M
0.10
0.15
0.25
K
0.00
-
0.25
θ
0°
-
8°
Will Semiconductor Ltd.
17
Mar, 2020 - Rev. 1.1
WS72551/2
TAPE AND REEL INFORMATION
SOT23-5L
(WS72551E-5/TR)
Reel Dimensions
RD
Reel Dimensions
Tape Dimensions
W
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
RD
Reel Dimension
W
Overall width of the carrier tape
P1
Pitch between successive cavity centers
Pin1
Pin1 Quadrant
Will Semiconductor Ltd.
User Direction of Feed
7inch
13inch
1 8mm
12mm
16mm
2mm
4mm
8mm
Q1
Q2
Q3
18
Q4
Mar, 2020 - Rev. 1.1