5N10

5N10 N-channel MOSFET Datasheet 100V/5A N-Channel MOSFET Product Summary Features • Low RDS(on) & FOM VDS RDS(ON) MAX • Extremely low switching loss 100V • Excellent stability and uniformity 140mΩ@10V D2 S1 D1 170mΩ@4.5V ID MAX 5A • Fast switching and soft recovery Application • Consumer electronic power supply D • Motor control • Synchronous-rectification S • Isolated DC/DC convertor G D SOT-23-3L top view 1005 G Schematic diagram 1005: Device code S Marking and pin assignment Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDS Drain-Source Breakdown Voltage 100 V VGS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -50 to 155 °C IS Diode Continuous Forward Current 5 A Tc=25°C Mounted on Large Heat Sink 0 IDM Pulse Drain Current Tested Tc=25°C 19.6 A ID Continuous Drain Current Tc=25°C 5 A PD Maximum Power Dissipation Tc=25°C 5 W RθJA Thermal Resistance Junction-Ambient 85 °C/W www.yongyutai.com 1 Rev.-2.0 5N10 N-channel MOSFET Datasheet Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) BV(BR)DSS Drain-Source Breakdown Voltage VGS=0V，ID=250μA 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS=100V，VGS=0V -- -- 1 uA IGSS Gate-Body Leakage Current VGS=±20V，VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250μA 1 1.8 2.5 V VGS=10V， ID=3A -- 105 140 mΩ RDS(on) Drain-Source On-State Resistance VGS=4.5V，ID=2A -- 140 170 mΩ Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=50V，VGS=0V， f=1MHz -- 212 -- pF -- 27.5 -- pF -- 1.6 -- pF -- 3.3 -- nC -- 0.35 -- nC Switching Characteristics Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge -- 0.87 -- nC td(on) Turn-on Delay Time -- 13.2 -- nS tr Turn-on Rise Time -- 2.2 -- nS td(off) Turn-Off Delay Time -- 11 -- nS tf Turn-Off Fall Time -- 1.1 -- nS -- -- 1.2 V VDS=50V，ID=3A， VGS=10V VDS=50V，ID=3A， VGS=10V，RG=2Ω Source- Drain Diode Characteristics VSD Forward on voltage www.yongyutai.com Tj=25℃，Is=3A， 2 Rev.-2.0 5N10 N-channel MOSFET Datasheet Typical Operating Characteristics 10 20 VDS=10V 16 VGS, Gate-Source Voltage (V) ID, Drain-Source Current (A) 10V 6V 12 5V 4.5V 8 4 VGS=3.5V 0 6 4 2 0 0 2 4 6 8 10 0 250 1 2 3 4 5 Qg -Total Gate Charge (nC) Fig2. Typical Gate Charge Vs.Gate-Source Voltage VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics 180 VGS=10V ID=5A On Resistance(mΩ ) 200 Normalized On Resistance 8 150 100 150 VGS=4.5V 120 VGS=10V 90 50 0 -75 -50 -25 0 25 50 60 75 100 125 150 175 0 Tj - Junction Temperature (°C) Fig3. Normalized On-Resistance Vs. Temperature 2 4 6 8 10 ID, Drain-Source Current (A) Fig4. On-Resistance Vs. Drain-Source Current 400 100 300 10 10us 100us 1 1ms DC 0.1 Capacitance (pF) ID - Drain Current (A) Limit by RDS(ON) Ciss 200 100 Coss 0.01 Crss 0 0.01 0.1 1 10 0 100 VDS, Drain -Source Voltage (V) Fig5. Maximum Safe Operating Area www.yongyutai.com 20 40 60 80 100 VDS , Drain-Source Voltage (V) Fig6 Typical Capacitance Vs.Drain-Source Voltage 3 Rev.-2.0 5N10 N-channel MOSFET Datasheet SOT-23-3L Package information Symbol A A1 A2 b c D E1 E e e1 L θ www.yongyutai.com Dimensions in Millimeters(mm) Min Max 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950TYP 1.800 2.000 0.300 0.600 0° 8° 4 Dimensions In Inches Min Max 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037TYP 0.071 0.079 0.012 0.024 0° 8° Rev.-2.0