SI2323

HXY SI2323 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Description The SI2323 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. D This device is suitable for use as a S Battery protection or in other Switching application. G SOT-23 General Features VDS = -20V,ID = -5A RDS(ON) < 45mΩ @ VGS=4.5V D Application High power and current handing capability Lead free product is acquired G Surface mount package PWM applications S Load switch P-Channel MOSFET Power management Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) SI2323 SOT-23 A5SHB 3000PCS Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter Limit Unit VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID Drain Current-Continuous -5 A IDM Drain Current-Pulsed (Note 1) -14 A PD Maximum Power Dissipation 1.31 W -55 To 150 ℃ 120 ℃/W TJ,TSTG RθJA Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient (Note 2) Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY SI2323 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) 2 Static Drain-Source On-Resistance Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-4.9A --- 35 45 VGS=-2.5V , ID=-3.4A --- 45 60 VGS=-1.8V , ID=-2A --- 65 85 -0.4 --- -1.0 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA m △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 12.8 --- S Qg Total Gate Charge (-4.5V) --- 10.2 14.3 --- 1.89 2.6 VDS=-15V , VGS=-4.5V , ID=-3A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 3.1 4.3 Td(on) Turn-On Delay Time --- 5.6 11.2 uA nC Rise Time VDD=-10V , VGS=-4.5V , --- 40.8 73 Turn-Off Delay Time RG=3.3, ID=-3A --- 33.6 67 Fall Time --- 18 36 Ciss Input Capacitance --- 857 1200 Coss Output Capacitance --- 114 160 Crss Reverse Transfer Capacitance --- 108 151 Min. Typ. Max. Unit --- --- -4.9 A --- --- -14 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current Pulsed Source Current Conditions 1,4 2,4 2 VG=VD=0V , Force Current VSD Diode Forward Voltage trr Reverse Recovery Time IF=-3A , di/dt=100A/µs , --- 21.8 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 6.9 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY SI2323 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Typical Characteristics 100 RD S O N( m Ω ) -ID=3A 80 60 40 1 2 3 -VGS (V) 4 5 Fig.2 On-Resistance vs. G-S Voltage Fig.1 Typical Output Characteristics -IS Source Current(A) 4 3 TJ=150℃ TJ=25℃ 2 1 0 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics diode 1.8 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1 0.6 1.4 1.0 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ Shenzhen HuaXuanYang Electronics CO.,LTD 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ www.hxymos.com HXY SI2323 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG 1000 100.00 Ciss 100us 10ms -ID (A) C (pF) 10.00 Coss 100 100ms 1.00 Crss 1s 0.10 DC TA=25℃ Single Pulse F=1.0MHz 10 0.01 1 5 9 13 17 21 0.1 -VDS (V) Fig.7 Capacitance 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Shenzhen HuaXuanYang Electronics CO.,LTD Fig.11 Gate Charge Waveform www.hxymos.com HXY SI2323 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY SI2323 ELECTRONICS CO.,LTD P-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein in such applications. ■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein. ■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all HUA XUAN YANG ELECTRONICS products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA XUAN YANG ELECTRONICS CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the HUA XUAN YANG ELECTRONICS product that you intend to use. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com