BZT52C12V

BZT52C Series Plastic-Encapsulate Zener Diode 特征 Features SOD-123 z 齐纳击穿阻抗低; Low Zener Impedance z 最大功率耗散 500mW; Power Dissipation of 500mW z 高稳定性和可靠性。High Stability and High Reliability 机械数据 Mechanical Data z z z z 封装: SOD-123 封装 SOD-123 Small Outline Plastic Package 极性: 色环端为负极 Polarity: Color band denotes cathode end 环氧树脂 UL 易燃等级 Epoxy UL: 94V-0 安装位置: 任意 Mounting Position: Any 极限值和温度特性(TA = 25℃ 除非另有规定) Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) 参数 Parameters 符号 Symbol 数值 Value 单位 Unit 功率消耗 Power Dissipation Pd 500 1) mW 正向压降 Forward Voltage @IF=10mA Vf 0.9 2) V 存储温度 Storage temperature range Ts -65-+150 ℃ Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm² Short duration test pulse used to minimize self-heating effect f=1KHz 电特性 (TA = 25℃ 除非另有规定) 1) 2) 3) Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Zener Voltage Range version: 02 Maximum Zener Impedance Zzt Zzk Izk @Izt @Izk Ω mA Maximum Reverse Current Typical Temperature coefficent @ IZTC=mV/℃ Min Max Test Current IZTC Device Marking Nom(V) Min(V) Max(V) mA uA V BZT52C2V4 WX 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 Vz@Izt http://www.trr-jx.com Izt IR VR mA BZT52C Series Plastic-Encapsulate Zener Diode Zener Voltage Range Maximum Zener Impedance Zzt Zzk Izk @Izt @Izk Ω mA Maximum Reverse Current Typical Temperature coefficent @ IZTC=mV/℃ Min Max Test Current IZTC Device Marking Nom(V) Min(V) Max(V) mA uA V BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43 WU 43 40.0 46.0 2 100 700 1.0 0.1 32.0 10.0 12.0 5 BZT52C47 WV 47 44.0 50.0 2 100 750 1.0 0.1 35.0 10.0 12.0 5 BZT52C51 WW 51 48.0 54.0 2 100 750 1.0 0.1 38.0 10.0 12.0 5 Vz@Izt Izt IR VR Breakdown characteristics at Tj=constant (pulsed) Forward characteristics version: 02 http://www.trr-jx.com Admissible power dissipation versus ambient temperature mA BZT52C Series Plastic-Encapsulate Zener Diode version: 02 Pulse thermal resistance versus pulse duration Dynamic resistance versus Zener current Capacitance versus Zener voltage Dynamic resistance versus Zener current Dynamic resistance versus Zener current Thermal differential resistance versus Zener voltage http://www.trr-jx.com BZT52C Series Plastic-Encapsulate Zener Diode Dynamic resistance versus Zener voltage Temperature dependence of Zener voltage versus Zener voltage Temperature dependence of Zener voltage versus Zener voltage Change of Zener voltage versus junction temperature Change of Zener voltage versus junction temperature Change of Zener voltge from turn-on up to the point of thermal equilibrium versus Zener voltage version: 02 http://www.trr-jx.com BZT52C Series Plastic-Encapsulate Zener Diode SOD-123 PACKAGE OUTLINE Plastic surface mounted package θ θ 焊盘设计参考 Precautions: PCB Design Recommended land dimensions for SOD-123 diode. Electrode patterns for PCBs 技术要求: 3.24 1.0 0.8 version: 02 http://www.trr-jx.com 中心距: 3.24 1, 塑封体尺寸: 2.70 X 1.60 脚 宽: 0.55 2: 未注公差为: ±0.05 焊盘宽: 1.00 3, 所有单位: mm 脚 长: 0.50 焊盘长: 0.80