LY323EC03UL

TVS Diode Arrays LY323EC03UL Description The LY323EC03UL is a 3.3V bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data lines. It complies with IEC 61000-4-2 (ESD), ±30kV air and ±30kV contact discharge. It is assembled into a lead-free SOD-323 package. The small size, low capacitance and high ESD surge protection make it an ideal choice to protect cell phone, wireless systems, and communication equipment. Features       Low clamping voltage Ultra low leakage current Operating voltage: 3.3V RoHS compliant IEC-61000-4-2 ESD ±30kV Air, ±30kV Contact Packaging: 7 inch reel, 3000pcs/reel Applications     USB Ports Smart Phones Wireless Systems Ethernet 10/100/1000 Bast T Pin Configuration and Marking 1 2 Circuit and Pin Schematic www.liownsemi.com 掌握芯技术Core Technology （V1） TVS Diode Arrays LY323EC03UL Absolute Maximum Ratings (TA=25℃) Parameter Symbol Value Peak Pulse Power (8/20µs) PPP 500W Peak Pulse Current (8/20µs) IPP 30A VESD ±30kV ±30kV Ambient Temperature Range TA −55℃ to +125℃ Storage Temperature Range TSTG −55℃ to +150℃ ESD per IEC 61000−4−2 (Air) ESD per IEC 61000−4−2 (Contact) Electrical Characteristics (TA=25℃) Parameter Reverse Working Voltage Breakdown Voltage Symbol VBR IR Clamping Voltage VC www.liownsemi.com Min. Typ. Max. - - 3.3V 3.9V - - VRWM = 3.3V - - 0.2µA IPP = 1A (8/20µs) - - 7V IPP = 30A (8/20µs) - - 16V VR = 0V, f = 1MHz - 1pF - VRWM Reverse Leakage Current Junction Capacitance Test Condition CJ IT = 1mA 掌握芯技术Core Technology （V1） TVS Diode Arrays LY323EC03UL Typical Characteristic Curves (TA=25℃) Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve 10000 1000 100 10 0.1 1 10 td-Pulse Width (µs) 100 Figure 3. Clamping Voltage vs. Peak Pulse Current Figure 4. Junction Capacitance vs. Reverse Voltage 24 20 16 12 8 4 0 0 5 10 20 15 25 IPP-Peak Pulse Current (A) Figure 5. Pulse Waveform (8/20µs) 30 Figure 6. Pulse Waveform (IEC61000-4-2) I 100% % of Peak Pulse Current 90% 10% tr=0.7~1ns 30ns 60ns www.liownsemi.com 掌握芯技术Core Technology t （V1） TVS Diode Arrays LY323EC03UL Soldering Parameters Reflow Soldering Profile Feature Pb-Free Assembly Average ramp-up rate (TL to TP) 3℃/second max. Preheat -Temperature Min (TS min) -Temperature Max (TS max) -Time (min to max) ( tS) 150℃ 200℃ 60-180 seconds TS max to TL -Ramp-up Rate 3℃/second max. Time maintained above: -Temperature (TL) -Time (tL) 217℃ 60-150 seconds Peak Temperature (TP) 260℃ Time within 5℃ of actual Peak Temperature (tP) Ramp-down Rate 6℃/second max. Time 25℃ to Peak Temperature www.liownsemi.com 20-40 seconds 8 minutes max. 掌握芯技术Core Technology （V1） TVS Diode Arrays LY323EC03UL Dimensions (SOD-323) Millimeters A D H2 Side View Top View t www.liownsemi.com H H1 Inches Symbol Min. Max. Min. Max. A 2.30 2.80 0.091 0.110 B 1.15 1.40 0.045 0.055 C 0.25 0.40 0.001 0.016 D 1.60 1.80 0.063 0.071 H 0.80 1.10 0.031 0.043 H1 0.80 0.90 0..031 0.035 H2 0.00 0.10 0.000 0.004 t 0.08 0.18 0.003 0.007 掌握芯技术Core Technology （V1）