SiT9025
AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Features
Applications
Spread spectrum for EMI reduction
Wide spread % option
Center spread: from ±0.125% to ±2%, ±0.125% step size
Down spread: -0.25% to -4% with -0.25% step size
Spread profile option: Triangular, Hershey-kiss, Random
Programmable rise/fall time for EMI reduction: 8 options,
0.25 to 40 ns
AEC-Q100 with extended temperature range (-55°C to 125°C)
Any frequency between 1 MHz and 150 MHz accurate to
6 decimal places
100% pin-to-pin drop-in replacement to quartz-based XO’s
Excellent total frequency stability as low as ±25 ppm
Contact SiTime for ±20 ppm option
Low power consumption of 6.6 mA typical at 1.8 V
Pin1 modes: Standby, output enable, or spread disable
LVCMOS output
Industry-standard packages
QFN: 2.0 x 1.6 mm2, 2.5 x 2.0 mm2, 3.2 x 2.5 mm2
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Rear/Surround view camera
Driver monitor
ADAS ECU/CPU
High speed serial link
Electrical Specifications
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated.
Typical values are at 25°C and 3.3 V supply voltage.
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency Range
Output Frequency Range
f
1
–
150
MHz
Frequency Stability and Aging
Frequency Stability[1]
F_stab
-25
–
-50
-
+25
ppm
+50
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply voltage.
Spread = Off.
Operating Temperature Range
Operating Temperature
Range
T_use
-40
–
+85
°C
AEC-Q100 Grade 3
-40
–
+105
°C
AEC-Q100 Grade 2
-40
–
+125
°C
AEC-Q100 Grade 1
–
+125
°C
Extended cold AEC-Q100 Grade 1
-55
Supply Voltage and Current Consumption
Supply Voltage
Current Consumption
OE Disable Current
Standby Current
Rev 1.01
Vdd
Idd
I_OD
I_std
1.62
1.8
1.98
V
2.25
2.5
2.75
V
2.52
2.8
3.08
V
2.7
3.0
3.3
V
2.97
3.3
3.63
V
2.25
–
3.63
V
–
7.9
9.5
mA
No load condition, f = 148.5 MHz, Vdd = 2.5 V to 3.3 V
–
6.6
8.0
mA
No load condition, f = 148.5 MHz, Vdd = 1.8 V
–
5.3
6.5
mA
f = 148.5 MHz, Vdd = 2.5 V to 3.3 V, OE = GND, Output in high-Z state
–
5.0
6.0
mA
f = 148.5 MHz, Vdd = 1.8 V, OE = GND, Output in high-Z state
–
2.6
9.0
µA
ST = GND, Vdd = 2.5 V to 3.3 V, Output is weakly pulled down
–
0.6
5.0
µA
ST = GND, Vdd = 1.8 V, Output is weakly pulled down
September 9, 2020
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Table 1. Electrical Characteristics (continued)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
LVCMOS Output Characteristics
Duty Cycle
DC
45
–
55
%
f = 1 to 137 MHz
43
–
57
%
f = 137.000001 to 150 MHz
Rise/Fall Time
Tr, Tf
–
1.2
2.0
ns
Output High Voltage
VOH
90%
–
–
Vdd
IOH = -4 mA (Vdd = 3.0 V or 3.3 V)
IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
IOH = -2 mA (Vdd = 1.8 V)
Output Low Voltage
VOL
–
–
10%
Vdd
IOL = 4 mA (Vdd = 3.0 V or 3.3 V)
IOL = 3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
IOL = 2 mA (Vdd = 1.8 V)
Input High Voltage
VIH
70%
–
–
Vdd
Pin 1, OE or ST
Input Low Voltage
VIL
–
–
30%
Vdd
Pin 1, OE or ST
IL
–
-2.3
–
µA
Pin1, ST logic low
–
2.8
–
µA
Pin1, ST logic high
–
-24.6
–
µA
Pin1, OE / SD logic low
–
3.2
–
µA
Pin1, OE / SD logic high
20% - 80%, default derive strength
Input Characteristics
Input Leakage Current
Startup and Resume Timing
Startup Time
T_start
–
–
10
ms
T_oe
–
–
215
ns
f = 148.5 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
T_resume
–
–
10
ms
Measured from the time ST pin crosses 50% threshold
Spread Enable Time
T_sde
–
–
4
µs
Measured from the time SD pin crosses 50% threshold
Spread Disable Time
T_sdde
–
–
55
µs
Measured from the time SD pin crosses 50% threshold
Enable/Disable Time
Resume Time
Measured from the time Vdd reaches its rated minimum value
Jitter
Cycle-to-cycle jitter
Note:
T_ccj
–
10.5
–
ps
f = 148.5 MHz, Vdd = 2.5 to 3.3 V, Spread = ON (or OFF)
–
10.8
–
ps
f = 148.5 MHz, Vdd = 1.8 V, Spread = ON (or OFF)
1. Contact SiTime for ±20 ppm option.
Table 2. Spread Spectrum %[3]
Table 3. Spread Profile[2,3]
Ordering Code
Center Spread
(%)
Down Spread
(%)
A
±0.125
-0.25
Triangular
Hershey-kiss
Rev 1.01
B
±0.250
-0.50
C
±0.390
-0.78
D
±0.515
-1.04
E
±0.640
-1.29
F
±0.765
-1.55
G
±0.905
-1.84
H
±1.030
-2.10
I
±1.155
-2.36
J
±1.280
-2.62
K
±1.420
-2.91
L
±1.545
-3.18
M
±1.670
-3.45
N
±1.795
-3.71
O
±1.935
-4.01
P
±2.060
-4.28
Spread Profile
Random
Notes:
2. In both Triangular and Hershey-kiss profiles, modulation rate is
employed with a frequency of ~31.25 kHz. In random profile,
modulation rate is ~ 8.6 kHz.
3. The random profile supports up to ±1.030% center spread
or -2.10% down spread (ordering codes A through H).
Page 2 of 3
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Table 4. Pin Description
Pin
Symbol
1
Top View
Functionality
OE / ST /
NC/ SD
Output
Enable
H[4]: specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H[4]: specified frequency output
L: output is low (week pull down). Device goes to sleep mode.
Supply current reduced to I_std.
No Connect
OE /
/
NC / SD
Pin1 has no function (Any voltage between 0 and Vdd or Open)
Spread
Disable
H: Spread = ON
L: Spread = OFF
2
GND
Power
Electrical ground
3
OUT
Output
Oscillator output
4
VDD
Power
Power supply voltage[5]
GND
1
4
VDD
2
3
OUT
Figure 1. Pin Assignments
Notes:
4. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
5. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Table 5. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the
IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Min.
Max.
Unit
Storage Temperature
Parameter
-65
150
°C
Vdd
-0.5
4
V
Electrostatic Discharge
–
2000
V
Soldering Temperature (follow standard Pb free soldering guidelines)
–
260
°C
Junction Temperature[6]
–
150
°C
Note:
6. Exceeding this temperature for extended period of time may damage the device.
Table 6. Maximum Operating Junction Temperature[7]
Max Operating Temperature (ambient)
Note:
Maximum Operating Junction Temperature
85°C
95°C
105°C
115°C
125°C
135°C
7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 7. Environmental Compliance
Parameter
Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration
MIL-STD-883F, Method 2007
Temperature Cycle
JESD22, Method A104
Solderability
MIL-STD-883F, Method 2003
Moisture Sensitivity Level
MSL1 @ 260°C
Rev 1.01
Page 3 of 4
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Timing Diagrams
90% Vdd
50% Vdd
T_start
Pin 4 Voltage
Vdd
Vdd
No Glitch [8]
during start up
T_resume
ST Voltage
CLK Output
CLK Output
HZ
HZ
T_start: Time to start from power-off
T_resume: Time to resume from ST
Figure 2. Startup Timing
50% Vdd
Figure 3. Standby Resume Timing (ST Mode Only)
Vdd
Vdd
OE Voltage
T_oe
OE Voltage
50% Vdd
T_oe
CLK Output
CLK Output
HZ
HZ
T_oe: Time to re-enable the clock output
T_oe: Time to put the output in High Z mode
Figure 4. OE Enable Timing (OE Mode Only)
Figure 5. OE Disable Timing (OE Mode Only)
Vdd
SD Voltage
50% Vdd
T_sde
Time (s)
Figure 6. SD Enable Timing (SD Mode Only)
Frequency
Deviation (%)
Modulation period = 32 µs (31.25 kHz)
Note:
50% Vdd
T_sdde
Frequency
Deviation (%)
SD Voltage
Vdd
Time (s)
Figure 7. SD Diable Timing (SD Mode Only)
8. SiT9025 has “no runt” pulses and “no glitch” output during startup or resume.
Rev 1.01
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Performance Plots
1.8 V
2.5 V
2.8 V
1.8 V
3.3 V
3.0 V
OE Disable Current (mA)
Current Consumption (mA)
5.2
5.0
4.8
4.6
4.4
0
20
40
60
80
100
120
3.3 V
6.5
6.0
5.5
5.0
4.5
4.0
140
0
20
40
1.8 V
2.5 V
2.8 V
60
80
100
120
140
Frequency (MHz)
3.0 V
Figure 9. Current Consumption vs Frequency
DUT1
DUT8
DUT15
3.3 V
DUT2
DUT9
DUT16
DUT3
FUT10
DUT17
DUT4
DUT11
DUT18
DUT5
DUT12
DUT19
DUT6
DUT13
DUT20
DUT7
DUT14
20
Frequency stability (ppm)
2.5
Standby Current (µA)
3.0 V
7.0
Figure 8. OE Disable Current vs Frequency
2.0
1.5
1.0
0.5
0
20
40
60
80
100
120
140
Frequency (MHz)
1.8V
2.5V
2.8V
3.0V
15
10
5
0
-5
-10
-15
-20
-40
-20
0
20
40
60
80
100
120
Temperature (°C)
Figure 10. Standby Current vs Frequency
Peak Cycle -to - Cycle Jitter (ps)
2.8 V
7.5
Frequency (MHz)
0.0
2.5 V
8.0
5.4
Figure 11. Frequency vs Temperature
3.3V
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
Frequency (MHz)
Figure 12. Cycle-to-cycle Jitter vs Frequency
(Spread profile: Triangular, Spread type: center,
Spread percentage: ±2.060%)
Rev 1.01
Page 5 of 6
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Rise/Fall Time (20% to 80%) vs CLOAD Tables
Table 8. Vdd = 1.8 V Rise/Fall Times for Specific CLOAD
Table 9. Vdd = 2.5 V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
5 pF
6.16
3.19
2.11
1.65
0.93
0.78
0.70
0.65
Drive Strength \ CLOAD
L
A
R
B
T
E
U
F or "‐": default
15 pF
11.61
6.35
4.31
3.23
1.91
1.66
1.48
1.30
30 pF
22.00
11.00
7.65
5.79
3.32
2.94
2.64
2.40
Rise/Fall Time Typ (ns)
45 pF
31.27
16.01
10.77
8.18
4.66
4.09
3.68
3.35
60 pF
39.91
21.52
14.47
11.08
6.48
5.74
5.09
4.56
Table 10. Vdd = 2.8 V Rise/Fall Times for Specific CLOAD
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
A
R
B
T
E or "‐": default
U
F
4.13
2.11
1.45
1.09
0.62
0.54
0.43
0.34
8.25
4.27
2.81
2.20
1.28
1.00
0.96
0.88
12.82
7.64
5.16
3.88
2.27
2.01
1.81
1.64
21.45
11.20
7.65
5.86
3.51
3.10
2.79
2.54
27.79
14.49
9.88
7.57
4.45
4.01
3.65
3.32
Table 11. Vdd = 3.0 V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
L
A
R
B
T
E or "‐": default
5 pF
3.77
1.94
1.29
0.97
0.55
15 pF
7.54
3.90
2.57
2.00
1.12
30 pF
12.28
7.03
4.72
3.54
2.08
45 pF
19.57
10.24
7.01
5.43
3.22
60 pF
25.27
13.34
9.06
6.93
4.08
0.44
1.00
1.83
2.82
3.67
U
F
0.34
0.29
0.88
0.81
1.64
1.48
2.52
2.29
3.30
2.99
Drive Strength \ CLOAD
L
A
R
B
T or "‐": default
E
U
F
5 pF
3.60
1.84
1.22
0.89
0.51
0.38
0.30
0.27
15 pF
7.21
3.71
2.46
1.92
1.00
0.92
0.83
0.76
30 pF
11.97
6.72
4.54
3.39
1.97
1.72
1.55
1.39
45 pF
18.74
9.86
6.76
5.20
3.07
2.71
2.40
2.16
60 pF
24.30
12.68
8.62
6.64
3.90
3.51
3.13
2.85
Table 12. Vdd = 3.3 V Rise/Fall Times for Specific CLOAD
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
L
A
R
B
T or "‐": default
5 pF
3.39
1.74
1.16
0.81
0.46
15 pF
6.88
3.50
2.33
1.82
1.00
30 pF
11.63
6.38
4.29
3.22
1.86
45 pF
17.56
8.98
6.04
4.52
2.60
60 pF
23.59
12.19
8.34
6.33
3.84
E
U
F
0.33
0.28
0.25
0.87
0.79
0.72
1.64
1.46
1.31
2.30
2.05
1.83
3.35
2.93
2.61
Rev 1.01
Page 6 of 7
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Programmable Drive Strength
output load increases. As an example, for a 3.3 V SiT9025
device with default drive strength setting, the typical
rise/fall time is 1.1 ns for 15 pF output load. The typical
rise/fall time slows down to 2.9 ns when the output load
increases to 45 pF. One can choose to speed up the rise/fall
time to 1.9 ns by then increasing the drive strength setting
on the SiT9025.
The SiT9025 includes a programmable drive strength
feature to provide a simple, flexible tool to optimize the
clock rise/fall time for specific applications. Benefits from the
programmable drive strength feature are:
Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time.
Improves the downstream clock receiver’s (RX) jitter by
decreasing (speeding up) the clock rise/fall time.
Ability to drive large capacitive loads while maintaining
full swing with sharp edge rates.
The SiT9025 can support up to 60 pF or higher in maximum
capacitive loads with up to 3 additional drive strength
settings. Refer to the Rise/Tall Time Tables to determine the
proper drive strength for the desired combination of output
load vs. rise/fall time.
For more detailed information about rise/fall time control
and drive strength selection, see the SiTime Application
Notes section.
SiT9025 Drive Strength Selection
Tables 8 through 12 define the rise/fall time for a given
capacitive load and supply voltage.
EMI Reduction by Slowing Rise/Fall Time
1. Select the table that matches the SiT9025 nominal
supply voltage (1.8 V, 2.5 V, 2.8 V, 3.3 V).
2. Select the capacitive load column that matches the
application requirement (15 pF to 60 pF)
3. Under the capacitive load column, select the desired
rise/fall times.
4. The left-most column represents the part number
code for the corresponding drive strength.
5. Add the drive strength code to the part number for
ordering purposes.
Figure 13 shows the harmonic power reduction as the
rise/fall times are increased (slowed down). The rise/fall
times are expressed as a ratio of the clock period. For the
ratio of 0.05, the signal is very close to a square wave. For
the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show that
the 11th clock harmonic can be reduced by 35 dB if the
rise/fall edge is increased from 5% of the period to 45% of
the period.
Calculating Maximum Frequency
Based on the rise and fall time data given in Tables 8
through 12, the maximum frequency the oscillator can
operate with guaranteed full swing of the output voltage
over temperature as follows:
Max Frequency =
1
5 x Trf_20/80
where Trf_20/80 is the typical value for 20%-80% rise/fall
time.
Example 1
Calculate fMAX for the following condition:
Vdd = 1.8 V (Table 8)
Figure 13. Harmonic EMI reduction as a function of
slower rise/fall time
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the
downstream chipset. One way to reduce this jitter is to
increase rise/fall time (edge rate) of the input clock. Some
chipsets would require faster rise/fall time in order to reduce
their sensitivity to this type of jitter. The SiT9025 provides
up to 3 additional high drive strength settings for very fast
rise/fall time. Refer to the Rise/Fall Time Tables to
determine the proper drive strength.
Desired Tr/f time = 3 ns (rise/fall time part number
code = E)
Part number for the above example:
SiT9025AAE12-18E-66.666660
Drive strength code is inserted here. Default setting is “-”
Supplied Voltage
High Output Load Capability
The supplied voltage must always stay within the range
from minimum to maximum limits of rated operating voltage
to guarantee specification performance. The supply voltage
must drop below 0.6 V for the device to reset.
The rise/fall time of the input clock varies as a function of
the actual capacitive load the clock drives. At any given
drive strength, the rise/fall time becomes slower as the
Rev 1.01
Capacitive Load: 30 pF
Page 7 of 8
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[9]
Recommended Land Pattern (Unit: mm)[10]
2.0 x 1.6 x 0.75 mm
0.8
1.2
1.5
0.9
2.5 x 2.0 x 0.75 mm
1.0
1.5
1.9
1.1
Rev 1.01
Page 8 of 9
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[9]
Recommended Land Pattern (Unit: mm)[10]
3.2 x 2.5 x 0.75 mm
1.2
1.9
2.2
1.4
Notes:
9. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of
the device.
10. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev 1.01
Page 9 of 10
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Ordering Information
The following part number guide is for reference only. To customize and build an exact part number, use the
SiTime Part Number Generator.
SiT9025AA -73-18E A 25.000625D
Packing Method
“D”: 8 mm Tape & Reel, 3 ku reel
“E”: 8 mm Tape & Reel, 1 ku reel
Blank for Bulk
Part Family
“SiT9025”
Revision Letter
“A” is the revision
Frequency[12]
1.000000 to 150.000000 MHz
Temperature Range
Spread Percentage[13]
“I” -40°C to 85°C, AEC-Q100 Grade3
“E” -40°C to 105°C, AEC-Q100 Grade2
“A” -40°C to 125°C, AEC-Q100 Grade1
“M” -55°C to 125°C, Ext cold AEC-Q100 Grade1
“-” no spread
Center:
”A” for ±0.125,
“B” for ±0.250,
“C” for ±0.390,
“D” for ±0.515,
“E” for ±0.640,
“F” for ±0.765,
“G” for ±0.905,
“H” for ±1.030,
“I”
for ±1.155,
“J”
for ±1.280,
“K” for ±1.420,
“L” for ±1.545,
“M” for ±1.670,
“N” for ±1.795,
“O” for ±1.935,
“P” for ±2.060,
Output Drive Strength
“–” Default (datasheet limits)
See Tables 8 to 12 for rise/fall times
“L”
“T”
“A”
“E”
“R”
“U”
“B”
“F”
Package Size
“7” 2.0 mm x 1.6 mm
“1” 2.5 mm x 2.0 mm
“2” 3.2 mm x 2.5 mm
Down:
-0.25
-0.50
-0.78
-1.04
-1.29
-1.55
-1.84
-2.10
-2.36
-2.62
-2.91
-3.18
-3.45
-3.71
-4.01
-4.28
Feature Pin
“E” for Output Enable
“S” for Standby
“N” for No Connect
“D” for Spread Disabled
Frequency Stability[11]
“3” for ±50 ppm
“2” for ±25 ppm
Spread Type and Profile
Supply Voltage
“-” Center spread & Triangular (Default)
“H” Center spread & Hershey Kiss
“R” Center spread & Random
“D” Down spread & Triangular
“G” Down spread & Hershey Kiss
“Q” Down spread & Random
“18” for 1.8 V ±10%
“25” for 2.5 V ±10%
“28” for 2.8 V ±10%
“30” for 3.0 V ±10%
“33” for 3.3 V ±10%
“XX” for 2.5 V -10% to 3.3 V +10%
Note:
11. Contact SiTime for ±20 ppm option.
12. Refer to the Supported Frequencies tables below.
13. The random profile supports up to ±1.030% center spread or -2.10% down spread (ordering codes A through H).
Rev 1.01
Page 10 of 11
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Supported Frequencies Tables
Table 13. Supported Frequencies
(-40 to +85°C, Center spread)
Spread Percentage (%)
Center spread
Table 14. Supported Frequencies
(-40 to +85°C, Down spread)
Spread Percentage (%)
Supported Frequencies (MHz)
Min.
Down spread
Max.
“B”: ±0.250
“B”: -0.50
“C”: ±0.390
“C”: -0.78
“D”: ±0.515
“D”: -1.04
“E”: -1.29
“E”: ±0.640
“F”: ±0.765
“F”: -1.55
1.000000
“H”: -2.10
“I”: -2.36
150.00000
“K”: -2.91
“L”: ±1.545
“L”: -3.18
“M”: -3.45
“M”: ±1.670
“N”: ±1.795
“O”: -4.01
“P”: ±2.060
“P”: -4.28
Table 15. Supported Frequencies
(-40 to +105°C or -40 to +125°C, Center spread)
Table 16. Supported Frequencies
(-40 to +105°C or -40 to +125°C, Down spread)
Supported Frequencies (MHz)
Min.
Spread Percentage (%)
Max.
Down spread
“A”: ±0.125
“B”: ±0.250
“B”: -0.50
“C”: -0.78
“D”: ±0.515
“E”: ±0.640
“D”: -1.04
“E”: -1.29
1.000000
150.000000
“G”: -1.84
“H”: ±1.030
“I”: ±1.155
“H”: -2.10
“I”: -2.36
“J”: ±1.280
“L”: ±1.545
“M”: ±1.670
“N”: ±1.795
“O”: ±1.935
“P”: ±2.060
Rev 1.01
Min.
Max.
“F”: -1.55
“G”: ±0.905
“K”: ±1.420
Supported Frequencies (MHz)
“A”: -0.25
“C”: ±0.390
“F”: ±0.765
150.00000
“N”: -3.71
“O”: ±1.935
Center spread
1.000000
“J”: -2.62
“K”: ±1.420
Spread Percentage (%)
Max.
“G”: -1.84
“G”: ±0.905
“I”: ±1.155
“J”: ±1.280
Min.
“A”: -0.25
“A”: ±0.125
“H”: ±1.030
Supported Frequencies (MHz)
1.000000
150.000000
1.000000
120.100000
“J”: -2.62
1.000000
149.900000
1.000000
120.100000
“K”: -2.91
“L”: -3.18
“M”: -3.45
120.700000
149.800000
1.000000
119.900000
124.500000
149.600000
1.000000
100.100000
102.700000
119.600000
128.400000
149.300000
1.000000
85.800000
1.000000
85.800000
87.400000
100.100000
102.400000
102.900000
“N”: -3.71
“O”: -4.01
123.200000
150.000000
1.000000
100.100000
101.600000
120.100000
127.000000
150.000000
86.100000
100.100000
103.400000
119.400000
104.800000
120.100000
129.200000
149.100000
128.100000
128.600000
1.000000
74.500000
131.100000
150.000000
75.800000
85.400000
88.500000
99.300000
106.200000
119.200000
132.700000
148.900000
“P”: -4.28
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Table 17. Supported Frequencies
(-55 to +125°C, Center spread)
Spread Percentage (%)
Center spread
Table 18. Supported Frequencies
(-55 to +125°C, Down spread)
Supported Frequencies (MHz)
Min.
Spread Percentage (%)
Max.
Down spread
“A”: ±0.125
“C”: -0.78
1.000000
“D”: -1.04
“E”: -1.29
150.000000
“F”: -1.55
“G”: ±0.905
“G”: -1.84
“H”: ±1.030
“I”: ±1.155
“L”: ±1.545
“M”: ±1.670
“N”: ±1.795
“O”: ±1.935
“P”: ±2.060
Rev 1.01
1.000000
150.000000
“H”: -2.10
“I”: -2.36
“J”: ±1.280
“K”: ±1.420
Max.
“B”: -0.50
“C”: ±0.390
“F”: ±0.765
Min.
“A”: -0.25
“B”: ±0.250
“D”: ±0.515
“E”: ±0.640
Supported Frequencies (MHz)
“J”: -2.62
1.000000
120.100000
“K”: -2.91
120.900000
149.900000
“L”: -3.18
1.000000
120.100000
124.700000
149.800000
1.000000
100.100000
102.900000
119.800000
128.600000
149.600000
1.000000
85.800000
86.300000
100.100000
103.500000
119.600000
129.400000
149.300000
1.000000
74.600000
75.900000
85.600000
88.6000000
99.500000
106.300000
119.400000
132.900000
149.100000
“M”: -3.45
“N”: -3.71
“O”: -4.01
1.000000
120.100000
123.400000
150.000000
1.000000
100.100000
101.800000
120.100000
127.300000
150.000000
1.000000
85.800000
87.500000
100.100000
102.600000
102.800000
105.000000
120.100000
128.200000
128.500000
131.300000
150.000000
1.000000
75.100000
75.600000
85.800000
1.000000
60.100000
88.200000
100.100000
60.200000
66.500000
105.800000
120.100000
67.700000
74.500000
132.300000
150.000000
77.400000
85.400000
90.300000
99.300000
108.400000
119.100000
135.500000
148.900000
“P”: -4.28
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Table 19. Additional information
Document
Description
Download Link
Manufacturing Notes
Tape & Reel dimension, reflow profile and other
manufacturing related info
http://www.sitime.com/manufacturing-notes
Qualification Reports
RoHS report, reliability reports, composition reports
http://www.sitime.com/support/quality-and-reliability
Termination Techniques
Termination design recommendations
http://www.sitime.com/support/application-notes
Layout Techniques
Layout recommendations
http://www.sitime.com/support/application-notes
Table 20. Revision history
Version
Release Date
1.0
9-Jun-2020
1.01
9-Sep-2020
Rev 1.01
Change Summary
Final release
Formatting updates
Supply voltage information update
Added ±25 ppm frequency stability
Figure 8 and 9 captions fix
Changed date format in rev table to d/month/yyyy
Page 13 of 14
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SiT9025 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439
© SiTime Corporation 2019-2020. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or
defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or
accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv)
improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
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BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR
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Rev 1.01
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