AO4409-JSM

AO4409 -30VP-Channel Enhancement Mode MOSFET  PIN CONFIGURATION  DESCRIPTION The 4409 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, r notebook computer power management and other to battery powered circuits where high-side switching -30V/-15A, RDS(ON) =8mΩ (typ.)@VGS=-10V  -30V/-10A, RDS(ON) =10mΩ (typ.)@VGS=-4.5V  Super high design for extremely low R DS(ON)  Exceptional on-resistance and Maximum DC nd  uc  FEATURE Full RoHS compliance SOP8 package design mi   co current capability  APPLICATIONS High Frequency Point-of-Load Synchronous  Newworking DC-DC Power System  Load Switch JS MI CR O Se  www.jsmsemi.com 第１页，共７页 AO4409 -30VP-Channel Enhancement Mode MOSFET  PART NUMBER INFORMATION A= Package Code 4409A-BB C S: SOP BB=Handing Code TR: Tape&Reel C=Lead Plating Code Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage nd Symbol Unless otherwise noted ) uc ABSOLUTE MAXIMUM RATINGS ( TA = 25℃ ID Continuous Drain Current (TA=25℃) IDM Pulsed Drain Current IS Continuous Source Current (Diode Conduction) PD Power Dissipation TJ Operation Junction Temperature co VGS=10V RθJA Thermal Resistance Junction to Ambient -30 V ±20 V -14 A -70 A -2.7 A 3.0 TA=70℃ 2.1 mi Storage Temperature Range Unit TA=25℃ Se TSTG Typical W 150 ℃ -55~+150 ℃ 85 ℃/W Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. MI CR O Absolute maximum ratings are stress rating only and functional device operation is not implied JS  to r G: Green Product www.jsmsemi.com 第２页，共７页 AO4409 -30VP-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS(TA=25℃ Symbol Parameter Unless otherwise noted) Condition Min Typ Max Unit Static Parameters Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1.0 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current V -1.3 -2.0 V VDS=0V, VGS=±20V ±100 nA VDS=-24V, VGS=0 -1 VDS=-24V, VGS=0 -5 r V(BR)DSS RDS(ON) VGS=-10V, ID=-15A Drain-Source On-Resistance VGS=-4.5V, ID=-10A VSD 8.5 11 10 13 -0.71 -1.0 uc Source-Drain Diode to TJ=55℃ Diode Forward Voltage IS=-1.0A, VGS=0V nd Dynamic Parameters Total Gate Charge VDS=-15V 37.08 48.2 Qgs Gate-Source Charge VGS=-4.5V 10.12 13.16 Qgd Gate-Drain Charge ID=-15A 11.24 14.61 Ciss Input Capacitance VDS=-15V 3887 VGS=0V 577 Reverse Transfer Capacitance Td(on) Tr Td(off) Tf Turn-On Time Turn-Off Time Se Crss Output Capacitance mi Coss co Qg uA mΩ V nC pF f=1MHz 425 VDS=-15V 19.52 39.04 ID=-10A 10.12 20.34 VGEN=-10V 137.6 275.2 RG=6Ω 55.32 110.64 nS O Note: 1. Pulse test: pulse width