FDS8958A(UMW)

UMW R FDS8958 N+P-Channel MOSFET General Description These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. P-Channel D 5 4 G D 6 3 S D 7 2 G D 8 1 S Features N-Channel SOP-8 N-Channel • V (V) = 30V • I = 7A (V = 10V) • R < 28mΩ (V • R < 40mΩ (V DS D GS DS(ON) DS(ON) GS GS = 10V) = 4.5V) P-Channel • V (V) = -30V • I = 5A (V = -10V) • R < 52mΩ (V • R < 80mΩ (V DS D GS DS(ON) DS(ON) GS GS = -10V) = -4.5V) Absolute Maximum Ratings T Symbol A = 25°C unless otherwise noted Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Drain Current PD - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation - Continuous N-Channel P-Channel Units 30 30 (Note 1a) ±20 7 ±20 -5 (Note 1a) 20 2 1.6 -20 2 1.6 W 0.9 54 0.9 13 mJ (Note 1c) EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range (Note 3) -55 to +150 V V A °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case www.umw-ic.com (Note 1a) 78 °C/W (Note 1) 40 °C/W 1 UTD Semiconductor Co.,Limited UMW R FDS8958 N+P-Channel MOSFET Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS IGSSF Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward IGSSR Gate-Body Leakage, Reverse VGS = -20 V, ∆BVDSS ∆TJ IDSS On Characteristics ID = 250 µA VGS = 0 V, VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 0 V N-Ch P-Ch 30 -30 V 25 -23 N-Ch P-Ch mV/°C µA All 1 -1 100 All -100 nA 3 -3 V N-Ch P-Ch 1.9 -1.7 -4.5 4.5 N-Ch 19 24 28 40 42 65 52 80 N-Ch P-Ch nA (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current gFS Forward Transconductance ID = 250 µA VDS = VGS, VDS = VGS, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C N-Ch P-Ch VGS = 10 V, VGS = 4.5 V, ID = 7 A ID = 6 A VGS = -10 V, VGS = -4.5 V, ID = -5 A ID = -4 A P-Ch VGS = 10 V, VGS = -10 V, VDS = 5 V, VDS = -5 V, VDS = 5 V VDS = -5 V ID = 7 A ID =-5 A N-Ch P-Ch N-Ch P-Ch 1 -1 20 -20 mV/°C mΩ A 25 10 S 575 528 145 132 65 70 2.1 6.0 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance N-Ch VDS = 15 V, VGS = 0 V, f = 1.0 MHz P-Ch Crss RG Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz Gate Resistance www.umw-ic.com VGS = 15 mV, f = 1.0 MHz 2 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch pF pF Ω UTD Semiconductor Co.,Limited UMW R FDS8958 N+P-Channel MOSFET Electrical Characteristics (continued) Symbol Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge TA = 25°C unless otherwise noted Test Conditions Type Min Max Units (Note 2) N-Ch VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω P-Ch VDD = -15 V, ID = -1 A, VGS = -10V, RGEN = 6 Ω N-Ch VDS = 15 V, ID = 7 A, VGS = 10 V P-Ch Qgd Typ Gate-Drain Charge VDS = -15 V, ID = -5 A,VGS = -10 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 8 7 5 13 23 14 3 9 11.4 9.6 1.7 2.2 2.1 1.7 16 14 10 24 37 25 6 17 16 13 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Plused Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge trr Qrr VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A (Note 2) (Note 2) (Note 2) N-Ch IF = 7 A, diF/dt = 100 A/µs P-Ch IF = -5 A, diF/dt = 100 A/µs N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.75 -0.88 19 19 9 6 1.3 -1.3 20 -20 1.2 -1.2 A A V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user' s board design. a) 78°/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°/W when 2 mounted on a .02 in pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V (Q1). Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 30V, VGS = 10V (Q2). www.umw-ic.com 3 UTD Semiconductor Co.,Limited R UMW FDS8958 N+P-Channel MOSFET Typical Characteristics: (N-Channel) VGS = 10.0V 2.2 4.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) 16 6.0V 4.5V 12 8 3.0V 4 1.8 1.4 0 4.5V 5.0 6.0V 10.0V 1 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0 Figure 1. On-Region Characteristics. 4 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 1.6 ID = 7A VGS = 10.0V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0 0.6 0 1.2 1 0.8 0.6 ID = 3.5A 0.07 0.06 0.05 TA = 125oC 0.04 0.03 TA = 25oC 0.02 0.01 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 16 ID, DRAIN CURRENT (A) VGS = 3.5V 12 TA = 125oC -55oC 8 25oC 4 0 10 TA = 125oC 1 0.1 25oC 0.01 -55oC 0.001 0.0001 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. www.umw-ic.com 4 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4 UTD Semiconductor Co.,Limited R UMW FDS8958 N+P-Channel MOSFET Typical Characteristics: (N-Channel) 800 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 7A VDS = 10V f = 1MHz VGS = 0 V 20V 8 CAPACITANCE (pF) 600 15V 6 4 2 Ciss 400 Coss 200 Crss 0 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 0 12 Figure 7. Gate Charge Characteristics. 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 8. Capacitance Characteristics. 100 10 ID, DRAIN CURRENT (A) 10 IAS, AVALANCHE CURRENT (A) 100µs RDS(ON) LIMIT 1ms 10ms 1s 1 100ms 10s DC VGS = 10V SINGLE PULSE RθJA = 135oC/W 0.1 o Tj=25 Tj=125 TA = 25 C 1 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0.1 1 10 100 tAV, TIME IN AVALANCHE (mS) Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching Capability Figure P(pk), PEAK TRANSIENT POWER (W) 50 SINGLE PULSE RθJ A = 135°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 11. Single Pulse Maximum Power Dissipation. www.umw-ic.com 5 UTD Semiconductor Co.,Limited R UMW FDS8958 N+P-Channel MOSFET Typical Characteristics: (P-Channel) 2 -ID, DRAIN CURRENT (A) VGS = -10V -6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 -5.0V -4.5V 20 -4.0V 10 -3.5V -3.0V 0 1.8 VGS=-4.0V 1.6 -4.5V 1.4 -5.0V -6.0V -7.0V 1.2 1 2 3 4 5 6 0 6 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) 18 24 30 -ID, DRAIN CURRENT (A) Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 1.6 ID = -5A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -10V 1 0.8 0 1.4 1.2 1 0.8 0.6 ID = -2.5A 0.2 0.15 TA = 125oC 0.1 TA = 25oC 0.05 0 -50 -25 0 25 50 75 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 14. On-Resistance Variation with Temperature. Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 15 100 25oC TA = -55oC 12 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) -8.0V 125oC 9 6 3 0 1 1.5 2 2.5 3 3.5 4 www.umw-ic.com TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 4.5 0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. Transfer Characteristics. VGS =0V 10 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. 6 UTD Semiconductor Co.,Limited UMW R FDS8958 N+P-Channel MOSFET r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Typical Characteristics: (P-Channel) 1 D = 0.5 R θJA (t) = r(t) * R θA R θJ A = 135 °C/W 0.2 0.1 0.1 0.05 P(pk) P(pk) 0.02 0.01 tt1 0.01 SINGLE PULSE 0.001 0.0001 0.001 tt22 T J - T A = P * R θJ A(t) Duty Cycle, D = t1 / t 2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 23. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.umw-ic.com 7 UTD Semiconductor Co.,Limited UMW R FDS8958 N+P-Channel MOSFET Package Mechanical Data SOP-8 Symbol A A1 A2 b c D E E1 e L θ www.umw-ic.com Dimensions In Millimeters Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 3.800 4.000 5.800 6.200 1.270(BSC) 0.400 1.270 0° 8° 8 Dimensions In Inches Min Max 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 0.150 0.157 0.228 0.244 0.050(BSC) 0.016 0.050 0° 8° UTD Semiconductor Co.,Limited UMW R FDS8958 N+P-Channel MOSFET Marking Ordering information Order code UMW FDS8958A www.umw-ic.com Baseqty Package 3000 SOP-8 9 Deliverymode Tape and reel UTD Semiconductor Co.,Limited