BSS138P

www.msksemi.com BSS138P Semiconductor Compiance D Features 55V,0.3A, RDS(ON) =1.2Ω@VGS=10V D Improved dv/ dt capability G Fast switching G Green Device Available G-S ESD Protection Diode Embedded S S SOT-23 BVDSS RDSON ID 55V 1.2R 0.3A ESD protected up to 2KV Applications Motor Drive Power Tools LED Lighting Absolute Maximum Ratings T Tc=25℃ unless otherwise noted Symbol Parameter Rating Units VDS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±20 V ID IDM PD Drain Current – Continuous (TA=25℃) 0.3 A Drain Current – Continuous (TA=70℃) 0.16 A Drain Current – Pulsed1 0.8 A Power Dissipation (TA=25℃) 0.35 W Power Dissipation – Derate above 25℃ 0.003 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol RθJA Parameter Thermal Resistance Junction to ambient Typ. Max. Unit --- 357 ℃/W www.msksemi.com BSS138P Semiconductor Compiance Min. Typ. Max. Unit VGS=0V , ID=250uA 55 --- V VDS=55V , VGS=0V , TJ=25℃ --- --- --1 uA VDS=40V , VGS=0V , TJ=125℃ --- --- 100 uA VGS= ±20V , VDS=0V --- --- ±10 uA VGS=10V , ID=0.2A --- 1.2 1.5 VGS=4.5V , ID=0.1A 1.5 2.5 1.1 1.5 V S Electrical Characteristics (TJ=25 ℃ , unless otherwise noted) 　 Off Characteristics Symbol BVDSS Parameter Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Conditions On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA --0.8 Forward Transconductance VDS=10V , ID=0.2A --- 0.5 --- --- 3.7 --- --- 0.9 --- --- 0.4 --- --- 3 --- --- 5 --- --- 14 --- --- 9 --- --- 25.5 --- --- 17 --- --- 7.8 --- Min. Typ. Max. Unit --- --- 0.3 A --- --- 0.6 A 1.4 V --- ns --- nC gfs Dynamic and switching Characteristics Qg Qgs Qgd Td(on) Tr Td(off) Tf Total Gate Charge2 , 3 Gate-Source Gate-Drain Charge2 , 3 VDS=30V , VGS=10V , ID=0.2A Charge2 , 3 Turn-On Delay Time2 , 3 Rise Time2 , 3 VDD=30V , VGS=10V , RG=6 Turn-Off Delay Time2 , 3 ID=0.2A Fall Time2 , 3 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=30V , VGS=0V , F=1MHz nC ns pF Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Conditions IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage VGS=0V , IS=0.2A , TJ=25℃ --- trr Reverse Recovery Time VR=50V, IS=0.2A --- --3.4 Qrr Reverse Recovery Charge dI/dt=100A/µs, TJ=25℃ --- 0.7 VG=VD=0V , Force Current Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. www.msksemi.com BSS138P Semiconductor Compiance 0.3 1 VGS=4V VGS=3.7V 0.8 0.15 VGS=3.5V 0.6 VGS=3.3V 0.1 0.4 VGS=3V 0.05 0.2 0 0 2 4 6 8 10 0 VDS ,Drain to Source Voltage (V) Normalized On Resistance Fig.1 Fig.2 Typical Output Characteristics 2.5 1.4 2 1.2 1.5 1 1 0.8 0.5 0.6 0 0 -50 50 100 25 150 0.4 -50 75 100 125 150 Continuous Drain Current vs. TC 0 50 100 150 TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Fig.3 50 TC , Case Temperature (℃) Fig. 4 Normalized RDSON vs. TJ 1700 2000 1600 1800 1500 1600 Normalized Vth vs. TJ VGS=4.5V ID= 2 0 0 mA 1400 1400 ID= 1 0 0 mA VGS=10V 1200 1300 Tc= 2 5 ℃ 1200 0 8 Fig.5 2 10 4 VGS , Gate to Source Voltage (V) Turn-On Resistance vs. VGS 6 Tc=25℃ 1000 0 .1 0 0 .1 4 0 .1 8 0 .2 2 0 .2 6 0 .3 0 ID , Drain Current (A) Fig.6 Turn-On Resistance vs. ID www.msksemi.com BSS138P Semiconductor 100 Compiance 10 ID=0.2A VDS=30V 8 Ciss Coss 10 6 Crss 4 2 1 0.1 1 0 10 0 0.8 Fig. 7 Fig.8 Capacitance Characteristics 1.6 2.4 Qg , Gate Charge (nC) VDS , Drain to Source Voltage (V) 3.2 4 Gate Charge Characteristics 1 1 10 us 100us 0.1 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 0 0.1 1ms 0.01 10ms 10 0ms D C S NOTES: DUTY FACTOR: D = t1/t2 IN GLEP ULSE 0.01 0.00001 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Fig. 9 Normalized Transient 1 0.001 TC =25℃ 0.1 1 10 100 VDS , Drain to Source Voltage (V) Fig. 10 Maximum Safe Operation Area www.msksemi.com BSS138P Semiconductor Compiance PACKAGE MECHANICAL DATA Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° REEL SPECIFICATION P/N BSS138P PKG QTY SOT-23 3000 www.msksemi.com BSS138P Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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