G350N06D32

G350N06D32 DUAL N-Channel Enhancement Mode Power MOSFET Description The G350N06D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested Schematic diagram < < 60V 10A 35mΩ 40mΩ l RoHS Compliant pin assignment Application l Power switch l DC/DC converters DFN3X3-8L Dual Ordering Information Device Package Marking Packaging G350N06D32 DFN3X3-8L Dual G350N06 5000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 60 V ID 10 A IDM 40 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 20 W EAS 36 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 6.25 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1829-V1.0) G350N06D32 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- V IDSS VDS = 60V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.7 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 5A -- 29 35 VGS = 4.5V, ID = 5A -- 32 40 Forward Transconductance gFS VGS = 5V, ID = 5A -- 12 -- -- 1330 -- -- 57 -- -- 54 -- -- 25 -- -- 4.5 -- -- 6.5 -- -- 5 -- -- 2.6 -- -- 16 -- -- 2.3 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 30V, f = 1.0MHz VDD = 30V, ID = 5A, VGS = 10V VDD = 30V, ID = 5A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 10 A Body Diode Voltage VSD TJ = 25ºC, ISD = 5A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 49 -- nC Reverse Recovery Time Trr IF = 5A, VGS = 0V di/dt=100A/us -- 29 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1829-V1.0) G350N06D32 Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1829-V1.0) G350N06D32 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 10V 4.5V ID, Drain Current (A) 25 30 VDS = 5V 3.5V ID, Drain Current (A) 30 Figure 2. Transfer Characteristics 3.2V 20 15 3V 10 5 0 25 20 15 25℃ 10 5 VGS = 2.5V 0 1 2 3 0 4 0 VDS, Drain-to-Source Voltage (V) Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） 50 45 40 VGS = 4.5V 30 25 VGS = 10V 20 15 0 2 4 6 8 4 6 8 VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance 35 2 Figure 4. Gate Charge 10 6 4 2 0 10 ID-Drain Current（A） VDD = 30V ID = 5A 8 0 5 10 15 20 25 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) 2000 Capacitance(pF) 1800 1600 Ciss 1400 1200 1000 800 600 400 200 0 Coss Crss 0 10 20 30 40 50 60 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1829-V1.0) G350N06D32 Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V ID = 5A VGS = 4.5V ID = 5A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1829-V1.0) G350N06D32 DFN3*3-8L Dual Package information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1829-V1.0)