WNM2046A-3/TR

WNM2046A-3/TR WNM2046A-3/TR Http://www.sh-willsemi.com Single N-Channel, 20V, 0.6A, Power MOSFET VDS (V) G Typical RDS(on) (Ω) S D 0.42 @ VGS =4.5V 20 0.58 @ VGS=2.5V 0.84 @ VGS=1.8V DFN1006-3L Descriptions D The WNM2046A-3/TR is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit.Standard G Product WNM2046A-3/TR is Pb-free. Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package DFN1006-3L S 6 = Device Code * = Month(A~z) Applications Marking  DC/DC converters  Power supply converters circuit  Load/Power Switching for portable device Will Semiconductor Ltd. Order information Device Package Shipping WNM2046A-3/TR DFN1006-3L 10K/Tape&Reel 1 Aug,2019- Rev.1.0 WNM2046A-3/TR Absolute Maximum ratings Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current a d Maximum Power Dissipation a d Continuous Drain Current b d Maximum Power Dissipation b d TA=25°C ID TA=70°C TA=25°C PD TA=70°C TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V 0.6 0.55 0.48 0.44 0.32 0.27 0.21 0.18 0.57 0.52 0.45 0.42 0.29 0.25 0.18 0.16 A W A W Pulsed Drain Current c IDM 1.4 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 350 390 395 455 397 435 445 505 240 280 a. Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu. b. Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu. c. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%. d. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Will Semiconductor Ltd. 2 Unit °C/W Aug,2019- Rev.1.0 WNM2046A-3/TR Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA 20 V Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±10V ±5 uA VGS(TH) VGS = VDS, ID = 250uA 0.70 1.0 V VGS = 4.5V, ID = 0.35A 420 600 VGS = 3.1V, ID = 0.20A 500 700 VGS = 2.5V, ID = 0.20A 580 800 VGS = 1.8V, ID = 0.20A 840 1300 VGS = 1.5V, ID = 0.04A 1100 1600 VDS = 10 V, ID = 0.35A 0.85 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS 0.45 mΩ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V, 0.12 Gate-to-Source Charge QGS ID = 0.54 A 0.32 Gate-to-Drain Charge QGD 0.14 Turn-On Delay Time td(ON) 7.2 Rise Time tr VGS = 4.5 V, VDS = 10 V, 9.5 Turn-Off Delay Time td(OFF) ID = 0.54A, RG = 6Ω 19.6 Fall Time tf VGS = 0 V, f = 1.0MHz, VDS = 10 V 30 7 pF 5 1.07 nC SWITCHING CHARACTERISTICS ns 4.6 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = 0.3A 3 0.85 1.5 V Aug,2019- Rev.1.0 WNM2046A-3/TR Typical Characteristics (Ta=25oC, unless otherwise noted) 1.0 IDS-Drain-to-Source Current (A) IDS-Drain-to Source Current (A) 2.0 VGS=3.0V~4.5V 1.5 VGS=2.5V 1.0 VGS=2.0V 0.5 VGS=1.5V 0.0 0.0 0.5 1.0 1.5 2.0 VDS=1.0V 0.8 0.6 o T= -50 C o T= 25 C o T= 150 C 0.4 0.2 0.0 0.0 0.5 VDS-Drain-to-Source Voltage (V) 2.5 3.0 Transfer characteristics 1.0 2.0 RDS(ON)-On-Resistance () RDS(ON)-On-Resistance () 2.0 VGS-Gate-to-Source Voltage (V) Output characteristics VGS=1.8V 0.8 VGS=2.5V 0.6 VGS=3.1V 0.4 VGS=4.5V 0.2 0.0 0.2 0.4 0.6 1.5 1.0 0.5 0.0 1.5 0.8 2.0 On-Resistance vs. Drain current Gate Threshold Voltage Normalize VGS=4.5V,ID=0.54A 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 o Temperature ( C) 4.0 3.5 4.5 5.0 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Temperature (oC) On-Resistance vs. Junction temperature Will Semiconductor Ltd. 3.0 On-Resistance vs. Gate-to-source voltage 1.6 1.5 2.5 VGS-Gate-to-Source Voltage (V) IDS-Drain-to-Source Current (A) RDS(ON)-On-Resistance Normalize 1.5 1.0 Threshold voltage vs. Temperature 4 Aug,2019- Rev.1.0 WNM2046A-3/TR 0.8 IS-Source-to-Drain Current (A) 60 VGS=0V C -Capacitance (pF) 50 F=1MHz 40 30 Ciss 20 Coss Crss 10 0 2 4 6 8 0.6 o o T=25 C 0.2 0.0 0.0 10 T=150 C 0.4 0.1 0.2 VDS-Drain Voltage (V) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 V -Source-to-Drain Voltage (V) SD Capacitance Body diode forward voltage 80 10 o TJ(MAX)=150 C 70 o ID-Drain Current (A) TA=25 C Power (W) 60 50 40 30 20 Limit by Rdson 1 100us 1ms 0.1 10s 0 1E-6 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 TA=25 C 1 10 100 VDS-Drain to Source Voltage(V) *VGS>minimum VGS at which RDS(ON) is specified Single pulse power Gate Voltage (V) 1s Single Pulse 0.1 Pulse width (S) 4 100ms DC o 10 10ms Safe operating power VGS=4.5V, VDS=10V, ID=0.54A 3 2 1 0 0.0 0.4 0.8 1.2 Qg (nc) Gate Charge Characteristics Will Semiconductor Ltd. 5 Aug,2019- Rev.1.0 WNM2046A-3/TR Transient thermal response (Junction-to-Ambient) Normalized Effective Transient Thermal Impedance 1 0.1 Duty cycle=0.5 0.2 0.1 0.05 0.01 0.02 PDM single pulse t1 t2 1E-3 1E-4 1E-6 1. Duty Cycle, D=t1/t2 2. Per Unit Base =RθJA= 455°C/W 3. TJM-TA = PDM RθJA 4. Surface Mounted 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Will Semiconductor Ltd. 6 Aug,2019- Rev.1.0 WNM2046A-3/TR Package outline dimensions DFN1006-3L L L1 L b1 E b2 e1 D e2 (Ⅰ) TOP VIEW BOTTOM VIEW (Ⅱ) A A1 (Ⅱ) (Ⅰ) SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A 0.36 - 0.50 A1 0.00 - 0.05 D 0.95 1.00 1.05 E 0.55 0.60 0.65 b1 0.10 0.15 0.20 b2 0.40 0.50 0.60 L 0.20 0.25 0.30 L1 0.20 0.30 0.40 e1 0.35 BSC e2 0.65 BSC Will Semiconductor Ltd. 7 Aug,2019- Rev.1.0 WNM2046A-3/TR Package outline dimensions Reel Dimensions RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 8 Q4 Aug,2019- Rev.1.0