HD2307

HD2307 SOT-23 Plastic-Encapsulate MOSFET P -Channel MOSFET Product Summary V(BR)DSS ID RDS(on)MAX 88mΩ@-10V    -30 V SOT- 23 D -2.7A 138mΩ@-4.5V  Features ● TrenchFET Power MOSFET ● Excellent RDS(on) and Low Gate Charge S G Applications    ● Load Switch for Portable Devices ● DC/DC Converter  Marking:   ● S7 Parameter Symbol Value Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 ID -2.7 Continuous Source-Drain Current IS -0.91 Power Dissipationa,b PD 1.1 W RθJA 114 ℃/W Operating Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Continuous Drain Current a,b a,b Thermal Resistance from Junction to Ambient (t≤5s) High Diode Semiconductor V A ℃ 1 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID =-250µA -30 VGS(th) VDS =VGS, ID =-250µA -1 Gate-Source Leakage IGSS VDS =0V, VGS =±20V ±100 Zero Gate Voltage Drain Current IDSS VDS =-30V, VGS =0V -1 VDS =-30V, VGS =0V, TJ=55℃ -10 Gate-Source Threshold Voltage Drain-Source On-State Resistancec RDS(on) Forward Transconductancec gfs -3 VGS =-4.5V, ID =-2.5A 0.110 0.138 VGS =-10V, ID =-3.5A 0.073 0.088 VDS =-10V, ID =-3.5A 7 V nA µA Ω S d Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf 340 VDS =-15V,VGS =0V,f =1MHz pF 67 51 VDS =-15V,VGS =-4.5V, ID =-2.5A f =1MHz VDD=-15V, RL=15Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω 4.1 6.2 nC 1.3 1.8 10 Ω 40 60 40 60 20 40 17 30 -0.8 -1.2 ns Drain-source Body diode characteristics VSD Body Diode Voltage IS=-0.75A, ,VGS =0 V Notes: a. t=5s. b. Surface mounted on 1” ×1” FR4 board. c. Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. d. Guaranteed by design, not subject to production testing. High Diode Semiconductor 2 Typical Characteristics Output Characteristics -20 Pulsed Ta=25℃ Pulsed VGS=-4.5V (A) -8 (A) -16 ID ID VGS=-4.0V -6 VGS=-3.5V -8 VGS=-3.0V DRAIN CURRENT -12 DRAIN CURRENT Transfer Characteristics -10 VGS=-10V,-8V,-6V Ta=25℃ -4 -4 -2 -0 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 300 VDS -5 -0 -1 -2 -3 GATE TO SOURCE VOLTAGE (V) ID RDS(ON) —— 500 -4 VGS VGS Ta=25℃ Ta=25℃ Pulsed 400 RDS(ON) (m) 250 200 ON-RESISTANCE RDS(ON) (m) Pulsed ON-RESISTANCE -5 (V) VGS=-4.5V 150 VGS=-10V 100 300 ID=-3.5A 200 100 50 0 -0 -4 -8 -12 DRAIN CURRENT ID -16 -20 (A) -0 -4 -8 -12 GATE TO SOURCE VOLTAGE -16 VGS -20 (V) IS —— VSD -10 Ta=25℃ SOURCE CURRENT IS (A) Pulsed -1 -0.1 -0.01 -0.0 -0.3 -0.6 -0.9 SOURCE TO DRAIN VOLTAGE -1.2 -1.5 VSD (V) High Diode Semiconductor 3 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 4 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 5