11N90

UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary Power MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N90 is universally applied in high efficiency switch mode power supply, 1 TO-220 1 TO-220F1 FEATURES * 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V * High switching speed * Improved dv/dt capability * 100% avalanche tested * Halogen Free SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N90L-TA3-T 11N90G-TA3-T 11N90L-TF1-T 11N90G-TF1-T Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F1 S: Source Pin Assignment 1 2 3 G D S G D S Packing Tube Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-497.a 11N90 PARAMETER Drain-Source Voltage Gate-Source Voltage Preliminary SYMBOL VDSS VGSS ID IDM EAS EAR dv/dt Power MOSFET ABSOLUTE MAXIMUM RATINGS(TC=25°C, unless otherwise specified) RATINGS UNIT 900 V ±30 V Continuous 11 A Drain Current Pulsed (Note 1) 28.0 A Single Pulsed (Note 2) 960 mJ Avalanche Energy Repetitive (Note 1) 12 mJ Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns TO-220 160 W Power Dissipation PD TO-220F1 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER TO-220 TO-220F1 TO-220 TO-220F1 SYMBOL θJA θJC RATINGS 62.5 62.5 0.78 2.48 UNIT °C/W °C/W °C/W °C/W Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-497.a 11N90 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) SYMBOL BVDSS TEST CONDITIONS ID=250µA, VGS=0V MIN 900 1.0 10 100 100 -100 5.0 1.1 TYP MAX UNIT V V/°C µA nA nA V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns µC △BVDSS/△TJ ID=250µA, Referenced to 25°C IDSS IGSS VDS=900V, VGS=0V VDS=720V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.5A Forward Transconductance gFS VDS=50V, ID=5.5A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=720V, ID=11.0A Gate to Source Charge QGS (Note 4, 5) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=450V, ID=11.0A, RG=25Ω Rise Time tR (Note 4, 5) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM (Note1) Drain-Source Diode Forward Voltage VSD IS=11A, VGS=0V (Note 4) VGS=0V, IS=11.0A, dIF/dt=100A/µs Body Diode Reverse Recovery Time tRR (Note 4) Body Diode Reverse Recovery Charge QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 37mH, IAS = 7.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 11.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 0.91 2530 3290 215 280 23 30 60 13 25 60 130 130 85 80 130 270 270 180 11 28.0 1.4 1000 17.0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-497.a 11N90 Gate Charge Test Circuit Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Waveforms VGS QG Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-497.a 11N90 Preliminary Peak Diode Recovery dv/dt Test Circuit & Waveforms Power MOSFET DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-497.a 11N90 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-497.a