APT1001RBVRG

APT1001RBVR 11A 1.000Ω 1000V POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested • Lower Leakage • Popular TO-247 Package TO-247 D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1001RBVR UNIT 1000 Volts Drain-Source Voltage 11 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 280 Watts Linear Derating Factor 2.24 W/°C VGSM PD TJ,TSTG 44 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 11 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX 1000 Volts 11 Amps (VGS = 10V, 0.5 ID[Cont.]) 1.00 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Ohms µA 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) UNIT ±100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-5572 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT1001RBVR Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 3050 3660 Coss Output Capacitance VDS = 25V 280 390 Reverse Transfer Capacitance f = 1 MHz 135 200 Crss Qg 3 Total Gate Charge Qgs VGS = 10V 150 225 VDD = 0.5 VDSS 16 24 ID = ID[Cont.] @ 25°C 70 105 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 12 24 VDD = 0.5 VDSS 11 22 ID = ID[Cont.] @ 25°C 55 85 RG = 1.6Ω 12 24 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN 11 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) 44 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs) UNIT Amps Volts 700 ns 9 µC THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.45 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 20mH, R = 25Ω, Peak I = 11A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5572 Rev C 0.5 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION UNIT °C/W APT1001RBVR 20 VGS=6V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 16 12 4.5V 8 4 4V 3.5V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @