APT1001RBLC

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. • Identical Specifications: TO-247 or Surface Mount D3PAK Package • Lower Gate Charge & Capacitance • Easier To Drive • 100% Avalanche Tested • Faster switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter SLC D G S All Ratings: TC = 25°C unless otherwise specified. APT1001R UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 1000 11 44 ±30 ±40 280 2.24 300 26 30 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps mJ 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 11 1.00 25 250 ±100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA nA Volts 11-99 050-5927 Rev- Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT1001R BLC - SLC Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V MIN TYP MAX UNIT 2310 280 90 75 17 40 14 11 40 13 nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 Diode Forward Voltage AL IC HN EC ON TI ED AT NC RM VA FO AD IN VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS RG = 1.6W ID = ID[Cont.] @ 25°C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns µC 11 44 (VGS = 0V, IS = - ID[Cont.]) 1.3 Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs) 700 9.0 THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.45 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L =20.0mH, R = 25W, Peak I = 11A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 11-99 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Gate Drain Source Heat Sink (Drain) and Leads are Plated 050-5927 Rev- 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058