APT12031JFLL

APT12031JFLL 1200V 30A 0.310Ω POWER MOS 7 R FREDFET S S 27 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 2 T- D G D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT12031JLL UNIT 1200 Volts Drain-Source Voltage ID Continuous Drain Current @ TC = 25°C IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 690 Watts Linear Derating Factor 5.52 W/°C PD TJ,TSTG 1 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy 1 Amps 120 TL EAS 30 -55 to 150 °C 300 Amps 30 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1200 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 15A) TYP MAX UNIT Volts 0.310 Ohms Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor µA 5-2003 Characteristic / Test Conditions 050-7081 Rev B Symbol APT12031JFLL DYNAMIC CHARACTERISTICS Symbol Characteristic C iss Input Capacitance VGS = 0V Coss Output Capacitance VDS = 25V Crss 3 Total Gate Charge Qgs Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time ID = 30A @ 25°C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 600V Turn-off Delay Time tf ID = 30A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Turn-on Switching Energy Eoff Turn-off Switching Energy 6 ns 1760 VDD = 800V, VGS = 15V Eon nC 30 RG = 0.6Ω Eon UNIT pF 250 365 45 235 23 16 79 VGS = 10V Qgd MAX 9480 1460 VDD = 600V Gate-Source Charge tr TYP f = 1 MHz Reverse Transfer Capacitance Qg MIN Test Conditions ID = 30A, RG = 5Ω 1241 INDUCTIVE SWITCHING @ 125°C 3035 VDD = 800V VGS = 15V µJ 1557 ID = 30A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM Characteristic / Test Conditions MIN TYP MAX 30 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) 120 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -30A) 1.3 Volts dv/ Peak Diode Recovery 18 V/ns dt dv/ dt 5 Reverse Recovery Time (IS = -30A, di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -30A, di/dt = 100A/µs) Tj = 25°C 1.8 Tj = 125°C 7.4 IRRM Peak Recovery Current (IS = -30A, di/dt = 100A/µs) Tj = 25°C 16 Tj = 125°C 30 t rr ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.18 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.12 Note: 0.5 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7081 Rev B 5-2003 0.20 0.08 0.3 0 t1 t2 Duty Factor D = t1/t2 0.04 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 8.0mH, RG = 25Ω, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID30A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 UNIT 1.0 Typical Performance Curves APT12031JFLL 80 RC MODEL Junction temp C 0.0375 0.0554F Power (watts) 0.142 0.751F Case temperature C ID, DRAIN CURRENT (AMPERES) VGS =15 & 10V 70 60 6.5V 6V 5.5V 50 40 5V 30 20 4.5V 10 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 0 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @