APT8024JFLL
800V 29A 0.260Ω
POWER MOS 7
®
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE
APT8024JFLL
D G S
All Ratings: TC = 25°C unless otherwise specified.
UNIT Volts Amps
800 29 116 ±30 ±40 460 3.68 -55 to 150 300 29 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.260 250 1000 ±100 3 5
(VGS = 10V, ID = 14.5A)
Ohms µA nA Volts
5-2006 050-7076 Rev C
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT8024JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 29A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 29A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 533V, VGS = 15V ID = 29A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 533V VGS = 15V ID = 29A, RG = 5Ω
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
4670 860 155 160 24 105 9 5 23 4 605 490 975 585
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns µC Amps
29 116 1.3 18
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN
(Body Diode) (VGS = 0V, IS = -29A)
5
d v/
t rr Q rr IRRM
Reverse Recovery Time (IS = -29A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -29A, di/dt = 100A/µs) Peak Recovery Current (IS = -29A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient
300 600 2.0 6.7 13 22
TYP MAX
THERMAL CHARACTERISTICS
Symbol RθJC RθJA UNIT °C/W
0.27 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.3
Z JC, THERMAL IMPEDANCE (°C/W) θ
4 Starting Tj = +25°C, L = 5.95mH, RG = 25Ω, Peak IL = 29A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID29A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
D = 0.9
0.20
0.7
0.15
0.5 Note:
PDM
5-2006
0.10 0.05 0
0.3
t1 t2
050-7076 Rev C
0.1 0.05 10-5 10-4 SINGLE PULSE
Peak TJ = PDM x ZθJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
80 70 60 50 40 30 20 10 0 0 VGS =15 &10 V 8V
APT8024JFLL
ID, DRAIN CURRENT (AMPERES)
7.5V
TJ ( C)
0.0409 Dissipated Power (Watts) 0.0246 0.406 148.0 0.225
TC ( C)
0.00361
7V
ZEXT
6.5V 6V 5.5V
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @
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