APT5015BVFRG

APT5015BVFR APT5015SVFR 500V 32A 0.150Ω BVFR POWER MOS V ® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • Avalanche Energy Rated • Lower Leakage • TO-247 or Surface Mount D3PAK Package SVFR D G • Fast Recovery Body Diode S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT5015BVFR_SVFR UNIT 500 Volts Drain-Source Voltage 32 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 370 Watts Linear Derating Factor 2.96 W/°C VGSM PD TJ,TSTG 128 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 30 (Repetitive and Non-Repetitive) EAR Volts 1 Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 Volts 32 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.15 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 1-2005 BVDSS Characteristic / Test Conditions 050-5627 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT5015BVFR_SVFR Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 4400 5280 Coss Output Capacitance VDS = 25V 600 840 Crss Reverse Transfer Capacitance f = 1 MHz 230 350 Qg Total Gate Charge VGS = 10V 200 300 Qgs Gate-Source Charge VDD = 0.5 VDSS Qgd Gate-Drain ("Miller") Charge ID = ID [Cont.] @ 25°C 30 80 45 120 VGS = 15V 12 25 t d(on) 3 Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf VDD = 0.5 VDSS 14 30 ID = ID [Cont.] @ 25°C 55 80 RG = 1.6Ω 11 20 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM Pulsed Source Current VSD Diode Forward Voltage dv/ MIN 32 Continuous Source Current (Body Diode) Peak Diode Recovery dt 1 2 dv/ 128 (Body Diode) dt UNIT Amps (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts 5 15 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 250 Tj = 125°C 525 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 1.6 Tj = 125°C 6.0 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 13 Tj = 125°C 21 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% TYP MAX 0.34 40 VR = 200V. D=0.5 0.05 0.1 0.05 0.01 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5627 Rev A 1-2005 0.4 0.2 0.01 0.001 10-5 t1 t2 SINGLE PULSE 10-4 °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 2.54mH, R = 25Ω, Peak I = 32A j G L 5 I - -I [Cont.], di/ = 100A/µs, V S D DD - VDSS, Tj - 150°C, RG = 2.0Ω, dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT5015BVFR_SVFR 60 VGS=6V, 7V, 8V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 50 5.5V 40 30 5V 20 4.5V 10 4V 0 50 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @