400V 23A
0.20Ω
APT4020BVFR
APT4020SVFR
APT4020BVFRG* APT4020SVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V ®
V®
FREDFET
BVFR
TO -2 47
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
D3PAK
SVFR
• Faster Switching • Lower Leakage • Fast Recovery Body Diode
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
• Avalanche Energy Rated • TO-247 or Surface Mount D3Pak
G
D
S
All Ratings: TC = 25°C unless otherwise specified.
APT4020B_SVFR(G) UNIT Volts Amps
400 23 92 ±30 ±40 250 2 -55 to 150 300 23 30
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
400 23 0.20 25 250 2 4 ±100
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 11.5A)
Ohms µA
3-2006 050-5635 Rev B
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
APT Website - http://www.advancedpower.com
nA Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT4020B_SVFR(G)
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 23A @ 25°C VGS = 15V VDD = 200V ID = 23A @ 25°C RG = 1.6Ω MIN TYP MAX UNIT pF
2650 400 180 120 16 60 10 11 38 7
ns nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts V/ns ns
23 92 1.3 15
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
(Body Diode) (VGS = 0V, IS = -23A)
5
Peak Diode Recovery dv/dt Reverse Recovery Time (IS = -23A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -23A, di/dt = 100A/µs) Peak Recovery Current (IS = -23A, di/dt = 100A/µs)
t rr Q rr IRRM
? ? ? ? ? ?
µC
Amps
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.50 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 3.63mH, R = 25Ω, Peak I = 23A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS ≤ -ID Cont. di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C [ ]
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
Z JC, THERMAL IMPEDANCE (°C/W) θ
D=0.5 0.2 0.1 0.05 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
050-5635 Rev B
3-2006
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
Typical Performance Curves
50 VGS=7V, 10V & 15V
ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
APT4020B_SVFR(G)
50 VGS=15V 6.5V 40 VGS=10V 7V 6.5V 30 6V
40
30
6V
20
5.5V
20
5.5V
10
5V 4.5V
10
5V 4.5V
0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.4
V
GS
0
50
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C TJ = +25°C TJ = +125°C
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
40
1.3
30
VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
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