MIC3203/MIC3203-1
High-Brightness LED Driver Controller with High-Side Current Sense
Features
General Description
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The MIC3203 is a hysteretic, step-down,
constant-current, high-brightness LED (HB LED)
driver. It provides an ideal solution for interior/exterior
lighting, architectural and ambient lighting, LED bulbs,
and other general illumination applications.
4.5V to 42V Input Voltage Range
High Efficiency (>90%)
±5% LED Current Accuracy
MIC3203: Dither Enabled for Low EMI
MIC3203-1: Dither Disabled
High-Side Current Sense
Dedicated Dimming Control Input
Hysteretic Control (No Compensation)
Up to 1.5 MHz Switching Frequency
Adjustable Constant LED Current
Overtemperature Protection
–40°C to +125°C Junction Temperature Range
Applications
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Architectural, Industrial, and Ambient Lighting
LED Bulbs
Indicators and Emergency Lighting
Street Lighting
Channel Letters
12V Lighting Systems (MR-16 Bulbs,
Under-Cabinet Lighting, Garden/Pathway
Lighting)
The MIC3203 is well suited for lighting applications that
require a wide input voltage range. The hysteretic
control gives good supply rejection and fast response
during load transients and PWM dimming. The
high-side current sensing and on-chip current-sense
comparator delivers LED current with ±5% accuracy.
An external high-side current-sense resistor is used to
set the output current.
The MIC3203 offers a dedicated PWM input (DIM) that
enables a wide range of pulsed dimming. A
high-frequency switching operation up to 1.5 MHz
allows the use of smaller external components
minimizing space and cost. The MIC3203 offers
frequency dither feature for EMI control.
The MIC3203 operates over a junction temperature
from –40°C to +125°C and is available in an 8-pin SOIC
package.
A dither disabled version MIC3203-1 is also available in
the same package as the MIC3203.
Package Type
MIC3203
8-Lead SOIC (M)
(Top View)
VCC 1
CS 2
7 PGND
VIN 3
6 DIM
AGND 4
2019 Microchip Technology Inc.
8 DRV
5 EN
DS20006250A-page 1
MIC3203/MIC3203-1
Typical Application Circuit
MIC3203
STEP-DOWN LED DRIVER
D
VIN
L
RCS
CIN
10μF
LEDs
2
DRV
CS
MOSFET
8
RG
3
5
6
VIN
Nȍ
MIC3203YM
MIC3203-1YM
EN
VCC
1
CVCC
1μF
DIM
AGND
PGND
4
7
Functional Block Diagram
D
L
RCS
(4.5V – 42V)
LED1
LED2
LED3
LED4
LED5
LED6
CIN
10μF
VIN
5V
REGULATOR
EN
VCC
CVCC
10μF
UVLO
177mV
DRV
FF
C1
S
Q
RG
Nȍ
R
CS
PGND
35mV
C2
DITHER
MIC3203 ONLY
SGND
DIM
THERMAL
SHUTDOWN
DS20006250A-page 2
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
VIN to PGND .............................................................................................................................................. –0.3V to +45V
VCC to PGND ............................................................................................................................................ –0.3V to +6.0V
CS to PGND.................................................................................................................................... –0.3V to (VIN + 0.3V)
EN to AGND .................................................................................................................................... –0.3V to (VIN + 0.3V)
DIM to AGND .................................................................................................................................. –0.3V to (VIN + 0.3V)
DRV to PGND ................................................................................................................................ –0.3V to (VCC + 0.3V)
PGND to AGND........................................................................................................................................ –0.3V to +0.3V)
ESD Rating (Note 1) ..................................................................................................................................... 1.5 kV, HBM
ESD Rating (Note 1) ......................................................................................................................................... 200V, MM
Operating Ratings ††
Supply Voltage (VIN) .................................................................................................................................. +4.5V to +42V
Enable Input Voltage (VEN) ................................................................................................................................ 0V to VIN
Dimming Input Voltage (VDIM) ............................................................................................................................ 0V to VIN
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† Notice: The device is not guaranteed to function outside its operating ratings.
Note 1: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series
with 100 pF.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics: VIN = VEN = VDIM = 12V; CVCC = 1.0 μF; TJ = +25°C, bold values indicate
–40°C ≤ TJ ≤ +125°C unless noted. Note 1
Parameter
Sym.
Min.
Typ.
Max.
Units
Conditions
VIN
4.5
—
42
V
Supply Current
IS
—
1
3
mA
DRV = open
Shutdown Current
ISD
—
—
1
μA
VEN = 0V
VIN UVLO Threshold
UVLO
3.2
4
4.5
V
VIN rising
VIN UVLO Hysteresis
UVLOHYS
—
500
—
mV
VCC
4.5
5
5.5
V
201.4
212
222.6
199
212
225
168
177
186
165
177
189
—
35
—
Input Supply
Input Voltage Range
—
—
VCC Supply
VCC Output Voltage
VIN = 12V, ICC = 10 mA
Current Sense Comparator
Current Sense Voltage Upper
Threshold
VCS(MAX)
Current Sense Voltage Lower
Threshold
VCS(MIN)
VCS Hysteresis
VCSHYS
Note 1:
2:
mV
VCS(MAX) = VIN – VCS
mV
VCS(MIN) = VIN – VCS
mV
—
Specification for packaged product only.
Guaranteed by design.
2019 Microchip Technology Inc.
DS20006250A-page 3
MIC3203/MIC3203-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: VIN = VEN = VDIM = 12V; CVCC = 1.0 μF; TJ = +25°C, bold values indicate
–40°C ≤ TJ ≤ +125°C unless noted. Note 1
Parameter
Min.
Typ.
Max.
—
50
—
—
70
—
IIN(CS)
—
0.5
10
μA
fSW
—
—
1.5
MHz
—
VDITH
—
±6
—
mV
—
fDITHER
—
±12
—
%
Percent of Switching Frequency
EN Logic Level High
VENH
2.2
—
—
V
—
EN Logic Level Low
VENL
—
—
0.4
V
—
—
—
60
—
—
1
tSTART
—
30
—
μs
From EN pin going high to DRV
going high
DIM Logic Level High
VDIMH
2.0
—
—
V
—
DIM Logic Level Low
VDIML
—
—
0.4
V
—
—
20
50
—
—
1
Current Sense Response
Time
CS Input Current
Sym.
tRES(CS)
Units
ns
Conditions
VCS rising
VCS falling
VIN – VCS = 220 mV
Frequency
Switching Frequency
Dithering (MIC3203)
VCS Hysteresis Dithering
Range (Note 2)
Frequency Dithering Range
(Note 2)
Enable Input
EN Bias Current
Start-Up Time
IEN
μA
VEN = 12V
VEN = 0V
Dimming Input
DIM Bias Current
IDIM
μA
DIM Delay Time
tDLY
—
450
—
ns
Maximum Dimming Frequency
fDIM
—
—
20
kHz
—
2
—
—
1.5
—
—
13
—
—
7
—
—
VDIM = 0V
From DIM pin going high to DRV
going high
—
External FET Driver
DRV On-Resistance
RDRV(ON)
DRV Transition Time
tr/tf
Ω
ns
Pull-Up, ISOURCE = 10 mA
Pull-Down, ISINK = –10 mA
Rise Time, CLOAD = 1000 pF
Fall Time, CLOAD = 1000 pF
Thermal Protection
Overtemperature Shutdown
Threshold
TLIM
—
160
—
°C
TJ rising
Overtemperature Shutdown
Hysteresis
TLIMHYS
—
20
—
°C
—
Note 1:
2:
Specification for packaged product only.
Guaranteed by design.
DS20006250A-page 4
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
TEMPERATURE SPECIFICATIONS
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Operating Junction Temperature
Range
TJ
–40
—
+125
°C
Note 1
Maximum Junction Temperature
TJ(MAX)
—
—
+150
°C
—
Temperature Ranges
TS
–60
—
+150
°C
—
TLEAD
—
—
+260
°C
Soldering, 10 sec.
Thermal Resistance, SOIC 8-Ld
θJA
—
98.9
—
°C/W
—
Thermal Resistance, SOIC 8-Ld
θJC
—
48.8
—
°C/W
—
Storage Temperature Range
Lead Temperature
Package Thermal Resistance
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
2019 Microchip Technology Inc.
DS20006250A-page 5
MIC3203/MIC3203-1
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
100
1.03
NORMALIZED LED CURRENTS (A)
EFFICIENCY (%)
90
80
4LED
6LED
8LED
10LED
70
L=68μH
ILED=1A
L=150μH
ILED=1A
1.02
1.01
1
1LED
0.99
2LED
4LED
5
10
15
20
25
30
35
40
8LED
10LED
0.97
60
0
6LED
0.98
0
45
5
10
INPUT VOLTAGE (V)
15
20
25
30
35
40
45
INPUT VOLTAGE (V)
FIGURE 2-1:
Efficiency vs. Input Voltage
(L = 150 μH, ILED = 1A).
FIGURE 2-4:
Normalized LED Currents
vs. Input Voltage (L = 68 μH, ILED = 1A).
100
350
L=150μH
ILED=1A
300
FREQUENCY (kHz)
EFFICIENCY (%)
90
80
4LED
6LED
8LED
70
250
4LED
200
150
100
1LED
10LED
0
5
10
15 20 25 30
INPUT VOLTAGE (V)
35
40
10LED
50
L=68μH
ILED=1A
60
8LED
6LED
0
45
0
5
700
L=150μH
ILED=1A
FREQUENCY (kHz)
10LED
2LED
4LED
6LED
20
25
30
35
40
45
L = 68μH
ILED = 1A
600
1.02
1LED
15
FIGURE 2-5:
Frequency vs. Input Voltage
(L = 150 μH, ILED = 1A).
1.03
1.01
10
INPUT VOLTAGE (V)
FIGURE 2-2:
Efficiency vs. Input Voltage
(L = 68 μH, ILED = 1A).
NORMALIZED LED CURRENTS (A)
2LED
8LED
1
0.99
0.98
4LED
500
400
2LED
300
1LED
200
100
6LED
0.97
8LED
10LED
0
0
5
10
15
20
25
30
35
40
45
INPUT VOLTAGE (V)
FIGURE 2-3:
Normalized LED Currents
vs. Input Voltage (L = 150 μH, ILED = 1A).
DS20006250A-page 6
0
5
10
15
20
25
30
35
40
45
INPUT VOLTAGE (V)
FIGURE 2-6:
Frequency vs. Input Voltage
(L = 68 μH, ILED = 1A).
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
100
6.0
5.0
TA = 25°C
ILED = 0A
ICC = 0A
4.0
VCC (V)
DUTY CYCLE (%)
75
1LED
50
2LED
3.0
2.0
4LED
25
1.0
6LED
L=150μH
ILED=1A
8LED
0.0
10LED
0
0
0
5
10
15
20
25
30
35
40
5
45
FIGURE 2-10:
100
ENABLE THRESHOLD (V)
DUTY CYCLE (%)
20
25
30
35
40
45
VCC vs. Input Voltage.
1.8
75
50
1LED
2LED
4LED
25
6LED
L=68μH
ILED=1A
8LED
0
5
10
15
20
25
30
35
40
1.6
1.4
1.2
TA = 25°C
ILED = 0A
ICC = 0A
1.0
0.8
0.6
0.4
0.2
0.0
10LED
0
0
5
45
15
20
25
30
35
40
45
FIGURE 2-11:
Voltage.
Enable Threshold vs. Input
250
CURRENT-SENSE THRESHOLD (mV)
1.4
1.2
1.0
TA = 25°C
ILED = 0A
0.8
0.6
0.4
0.2
0.0
0
5
10
15
20
25
30
35
40
45
200
VCS_MIN
150
VCS_MAX
L = 100μH
ILED = 1A
100
50
0
0
5
INPUT VOLTAGE (V)
FIGURE 2-9:
Voltage.
10
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
FIGURE 2-8:
Duty Cycle vs. Input Voltage
(L = 68 μH, ILED = 1A).
SUPPLY CURRENT (mA)
15
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
FIGURE 2-7:
Duty Cycle vs. Input Voltage
(L = 150 μH, ILED = 1A).
10
Supply Current vs. Input
2019 Microchip Technology Inc.
10
15
20
25
30
35
40
45
INPUT VOLTAGE (V)
FIGURE 2-12:
vs. Input Voltage.
Current-Sense Threshold
DS20006250A-page 7
MIC3203/MIC3203-1
1.2
35
SUPPLY CURRENT (mA)
SHUTDOWN CURRENT (μA)
40
30
25
20
15
TA = 25°C
ILED = 0A
10
5
1.0
0.8
VIN = 12V
ILED = 0A
0.6
0.4
0.2
0
-5
0.0
0
5
10
15
20
25
30
35
40
45
-40
-20
INPUT VOLTAGE (V)
FIGURE 2-13:
Voltage.
Shutdown Current vs. Input
FIGURE 2-16:
Temperature.
20
140
60
80
100
120
Supply Current vs.
5.0
120
VIN = 12V
ICC = 0A
4.0
VCC (V)
100
80
60
3.0
2.0
TA = 25°C
40
1.0
20
0.0
0
0
5
10
15
20
25
30
35
40
-40
45
-20
FIGURE 2-14:
Voltage.
Enable Current vs. Enable
FIGURE 2-17:
2.0
180
1.8
ENABLE THRESHOLD (V)
200
160
140
120
100
80
60
TA = 25°C
VCC = 4.2V
ILED = 0A
40
20
0
20
40
60
80
100
120
TEMPERATURE (°C)
ENABLE VOTLAGE (V)
ICC LIMIT (mA)
40
6.0
160
ENABLE CURRENT (μA)
0
TEMPERATURE (°C)
VCC vs. Temperature.
1.6
ON
1.4
1.2
OFF
1.0
0.8
0.6
0.4
0.2
0
0.0
0
5
10
15
20
25
30
35
40
45
-40
INPUT VOLTAGE (V)
FIGURE 2-15:
DS20006250A-page 8
ICC Limit vs. Input Voltage.
-20
0
20
40
60
80
100
120
TEMPERATURE (°C)
FIGURE 2-18:
Temperature.
Enable Threshold vs.
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
160
SWITCHING FREQUENCY (kHz)
SHUTDOWN CURRENT (uA)
3.5
3.0
2.5
2.0
VIN = 12V
EN = 0V
1.5
1.0
0.5
140
120
100
80
60
VIN = 12V
1ILED
ILED = 1A
L = 100μH
40
20
0
0.0
-40
-20
0
20
40
60
80
100
-40
120
-20
Shutdown Current vs.
FIGURE 2-22:
Temperature.
50
4.5
45
4.0
40
35
VIN = 12V
EN = VIN
30
25
20
15
10
5
40
60
80
100
120
Switching Frequency vs.
3.5
OFF
3.0
2.5
2.0
1.5
1.0
0.5
0
0.0
-40
-20
0
20
40
60
80
100
120
-40
-20
TEMPERATURE (°C)
FIGURE 2-20:
Temperature.
0
20
40
60
80
100
120
TEMPERATURE (°C)
Enable Current vs.
FIGURE 2-23:
Temperature.
250
UVLO Threshold vs.
180
OFF
THERMAL SHUTDOWN (°C)
CURRENT-SENSE THRESHOLD (mV)
20
ON
UVLO THRESHOLD (V)
ENABLE CURRENT (uA)
FIGURE 2-19:
Temperature.
0
TEMPERATURE (°C)
TEMPERATURE (°C)
VCS_MAX
200
VCS_MIN
150
100
ILED = 1A
VCSHYS
50
160
140
ON
120
100
80
60
40
20
0
0
-40
-20
0
20
40
60
80
100
120
TEMPERATURE (°C)
FIGURE 2-21:
Temperature.
Current-Sense Voltage vs.
2019 Microchip Technology Inc.
0
5
10
15
20
25
30
35
40
45
INPUT VOLTAGE (V)
FIGURE 2-24:
Thermal Shutdown
Threshold vs. Input Voltage.
DS20006250A-page 9
MIC3203/MIC3203-1
VCS
(100mV/div)
ILED
(500mA/div)
ILED
(200mA/div)
VSW
(5V/div)
VSW
(2V/div)
Time (10μs/div)
Time (10μs/div)
FIGURE 2-25:
VIN = 6V.
Steady-State Operation at
FIGURE 2-28:
PWM Dimming at 20 kHz
(VIN = 12V, 90% Duty Cycle).
VCS
(100mV/div)
VCS
(100mV/div)
ILED
(500mA/div)
ILED
(200mA/div)
VSW
(5V/div)
VSW
(10V/div)
Time (4.0μs/div)
FIGURE 2-26:
PWM Dimming at 20 kHz
(VIN = 6V, 10% Duty Cycle).
Time (4.0μs/div)
FIGURE 2-29:
VIN = 24V.
Steady-State Operation at
VCS
(100mV/div)
ILED
(500mA/div)
ILED
(200mA/div)
VSW
(10V/div)
VSW
(5V/div)
Time (4.0μs/div)
FIGURE 2-27:
VIN = 12V.
DS20006250A-page 10
Steady-State Operation at
Time (10μs/div)
FIGURE 2-30:
PWM Dimming at 20 kHz
(VIN = 24V, 10% Duty Cycle).
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
VCS
(100mV/div)
ILED
(200mA/div)
VSW
(20V/div)
Time (4.0μs/div)
FIGURE 2-31:
VIN = 42V.
Steady-State Operation at
ILED
(500mA/div)
VSW
(20V/div)
Waveform Intensity: 100%
Time (10μs/div)
FIGURE 2-32:
PWM Dimming at 20 kHz
(VIN = 42V, 0% Duty Cycle).
2019 Microchip Technology Inc.
DS20006250A-page 11
MIC3203/MIC3203-1
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Pin Number
PIN FUNCTION TABLE
Pin Name
Description
1
VCC
Voltage Regulator Output. The VCC pin supplies the power to the internal circuitry. The
VCC in the output of a linear regulator which is powered from VIN. A 1 μF ceramic
capacitor is recommended for bypassing and should be placed as close as possible to
the VCC and AGND pins. Do not connect to an external load.
2
CS
Current-Sense Input. The CS pin provides the high-side current sense to set the LED
current with an external sense resistor.
3
VIN
Input Power Supply. VIN is the input supply pin to the internal circuitry and the positive
input to the current sense comparator. Due to the high frequency switching noise, a
10 μF ceramic capacitor is recommended to be placed as close as possible to VIN and
the power ground (PGND) pins for bypassing. Please refer to layout recommendations.
4
AGND
EN
Enable Input. The EN pin provides a logic level control of the output and the voltage
has to be 2.2V or higher to enable the current regulator. The output stage is gated by
the DIM pin. When the EN pin is pulled low, the regulator goes to off state and the supply current of the device is greatly reduced (below 1 μA). In the off state, during this
period the output drive is placed in a "tri-stated" condition, where MOSFET is in an “off”
or non-conducting state. Do not drive the EN pin above the supply voltage.
DIM
PWM Dimming Input. The DIM pin provides the control for brightness of the LED. A
PWM input can be used to control the brightness of LED. DIM high enables the output
and its voltage has to be at least 2.0V or higher. DIM low disables the output, regardless of EN “high” state.
PGND
Power Ground Pin for Power FET. Power Ground (PGND) is for the high-current
switching with hysteretic mode. The current loop for the power ground should be as
small as possible and separate from the Analog ground (AGND) loop. Refer to the layout considerations for more details.
DRV
Gate-Drive Output. Connect to the gate of an external N-channel MOSFET. The drain
of the external MOSFET connects directly to the inductor and provides the switching
current necessary to operate in hysteretic mode. Due to the high frequency switching
and high voltage associated with this pin, the switch node should be routed away from
sensitive nodes.
5
6
7
8
Ground pin for analog circuitry. Internal signal ground for all low power sections.
DS20006250A-page 12
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
4.0
FUNCTIONAL DESCRIPTION
The MIC3203 is a hysteretic step-down driver that
regulates the LED current over a wide input voltage
range.
The device operates from a 4.5V to 42V input supply
voltage range and provides up to 0.5A source and 1A
sink drive capability. When the input voltage reaches
4.5V, the internal 5V VCC is regulated and the DRV pin
is pulled high to turn on an external MOSFET if the EN
pin and DIM pin are high. The inductor current builds up
linearly. When the CS pin voltage hits the VCS(MAX) with
respect to VIN, the MOSFET turns off and the Schottky
diode takes over and returns the current to VIN. Then
the current, through inductor and LEDs, starts
decreasing linearly. When the CS pin voltage, with
respect to VIN pin voltage, hits VCS(MIN), the MOSFET
turns on and the cycle repeats.
The frequency of operation depends upon input
voltage, total LEDs voltage drop, LED current, and
temperature. The calculation for frequency of operation
is given in the Application Information section.
The MIC3203 has an on board 5V regulator that is for
internal use only. Connect a 1 μF capacitor on the VCC
pin to analog ground.
The MIC3203 has an EN pin that gives the flexibility to
enable and disable the IC device with logic high and
low signals.
The MIC3203 also has a DIM pin that can turn on and
off the LEDs if EN is in “high” state. This DIM pin
controls the brightness of the LED by varying the duty
cycle of DIM pin from 1% to 99%.
2019 Microchip Technology Inc.
DS20006250A-page 13
MIC3203/MIC3203-1
5.0
APPLICATION INFORMATION
The internal Functional Block Diagram of the MIC3203
is shown on Page 2. The MIC3203 is composed of a
current-sense comparator, voltage and current
reference, 5V regulator, and MOSFET driver.
Hysteretic mode control is a topology that does not
employ an error amplifier, it uses an error comparator
instead.
The inductor current is controlled within a hysteretic
window. If the inductor current is too small, the power
MOSFET is turned on; if the inductor current is large
enough, the power MOSFET is turned off. It is a simple
control scheme with no oscillator and no loop
compensation. Because the control scheme does not
need loop compensation, it makes a design easy and
avoids problems of instability.
Transient response to load and line variation is very
fast and only depends on propagation delay. This
makes the control scheme very popular for certain
applications.
5.1
LED Current and RCS
The main feature in MIC3203 is to control the LED
current accurately within ±5% of a set current.
Choosing a high-side RCS resistor helps with setting
constant LED current regardless of a wide input voltage
range. The following equation gives the RCS value:
EQUATION 5-1:
5.2
Frequency of Operation
To calculate the frequency spread across input supply:
EQUATION 5-2:
I
V L = L --------Lt
L is the inductance, ∆IL is fixed (the value of the
hysteresis):
EQUATION 5-3:
V CS MAX – V CS MIN
I L = ------------------------------------------------------R CS
VL is the voltage across inductor L, which varies by
supply.
For current rising (MOSFET is ON):
EQUATION 5-4:
I L
t r = L ------------------V L_RISE
V CS MAX + V CS MIN
1
R CS = --- ------------------------------------------------------
I LED
2
Where:
VL_RISE = VIN – ILED x RCS – VLED
For current falling (MOSFET is OFF):
TABLE 5-1:
RCS FOR LED CURRENT
ILED
I2R
Size (SMD)
1.33Ω
0.15A
0.03W
0603
0.56Ω
0.35A
0.07W
0805
RCS
0.4Ω
0.5A
0.1W
0805
0.28Ω
0.7A
0.137W
1206
0.2Ω
1.0A
0.2W
1206
0.13Ω
1.5A
0.3W
1210
0.1Ω
2.0A
0.4W
2010
0.08Ω
2.5A
0.5W
2010
EQUATION 5-5:
I L
t f = L -------------------V L_FALL
Where:
VL_FALL = VD + ILED x RCS + VLED
0.068Ω
3.0A
0.6W
2010
For VCS(MAX) and VCS(MIN), refer to the Electrical
Characteristics table.
DS20006250A-page 14
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
EQUATION 5-6:
T = tr + t f
1
f SW = --T
V D + I LED R CS + V LED V IN – I LED R CS – V LED
f SW = -----------------------------------------------------------------------------------------------------------------------------------------------L I L V D + V IN
Where:
VD = Schottky diode forward drop.
VLED = Total LEDs voltage drop.
VIN = Input voltage.
ILED = Average LED current.
5.3
Inductor
TABLE 5-4:
According to the above equation, choose the inductor
to make the operating frequency no higher than
1.5 MHz. The following tables give a reference inductor
value and corresponding frequency for a given LED
current. For space-sensitive applications, a smaller
inductor with higher switching frequency can be used,
but the efficiency of the regulator will be reduced.
INDUCTOR FOR VIN = 36V
8 LEDS
RCS
ILED
L
fSW
1.33Ω
0.15A
470 μH
495 kHz
0.56Ω
0.35A
220 μH
446 kHz
0.4Ω
0.5A
150 μH
467 kHz
0.28Ω
0.7A
100 μH
490 kHz
INDUCTOR FOR VIN = 12V,
1 LED
0.2Ω
1.0A
68 μH
515 kHz
0.13Ω
1.5A
47 μH
485 kHz
RCS
ILED
L
fSW
0.1Ω
2.0A
33 μH
530 kHz
1.33Ω
0.15A
220 μH
474 kHz
0.08Ω
2.5A
27 μH
519 kHz
0.068Ω
3.0A
22 μH
541 kHz
TABLE 5-2:
0.56Ω
0.35A
100 μH
439 kHz
0.4Ω
0.5A
68 μH
461 kHz
0.28Ω
0.7A
47 μH
467 kHz
0.2Ω
1.0A
33 μH
475 kHz
0.13Ω
1.5A
22 μH
463 kHz
0.1Ω
2.0A
15 μH
522 kHz
0.08Ω
2.5A
12 μH
522 kHz
0.068Ω
3.0A
10 μH
533 kHz
TABLE 5-3:
INDUCTOR FOR VIN = 24V,
4LEDS
RCS
ILED
L
fSW
1.33Ω
0.15A
470 μH
474 kHz
0.56Ω
0.35A
220 μH
426 kHz
0.4Ω
0.5A
150 μH
447 kHz
0.28Ω
0.7A
100 μH
470 kHz
0.2Ω
1.0A
68 μH
493 kHz
0.13Ω
1.5A
47 μH
463 kHz
0.1Ω
2.0A
33 μH
507 kHz
0.08Ω
2.5A
27 μH
496 kHz
0.068Ω
3.0A
22 μH
517 kHz
2019 Microchip Technology Inc.
Given an inductor value, the size of the inductor can be
determined by its RMS and peak current rating.
EQUATION 5-7:
V CS MAX – V CS MIN
I L
--------- = 2 ------------------------------------------------------- = 0.18
IL
V CS MAX + V CS MIN
I L RMS =
2
2
1
I L + ------ I L I L
12
1
I L PK = I L + --- I L = 1.09I L
2
Where:
IL = Average inductor current.
Select an inductor with saturation current rating at least
30% higher than the peak current.
DS20006250A-page 15
MIC3203/MIC3203-1
5.4
MOSFET
The MOSFET junction temperature is given by:
MOSFET selection depends upon the maximum input
voltage, output LED current, and switching frequency.
EQUATION 5-11:
The selected MOSFET should have a 30% margin on
the maximum voltage rating for high reliability
requirements.
The MOSFET channel resistance RDS(ON) is selected
such that it helps to get the required efficiency at the
required LED currents as well as meets the cost
requirement.
Logic level MOSFETs are preferred because the drive
voltage is limited to 5V.
The MOSFET power loss has to be calculated for
proper operation. The power loss consists of
conduction loss and switching loss. The conduction
loss can be found by:
EQUATION 5-8:
2
P LOSS CON = I FET RMS R DS ON
T J = P LOSS TOT JA + T A
The TJ must not exceed maximum
temperature under any conditions.
5.5
V TOTAL_LED
D = ------------------------------V IN
Freewheeling Diode
The freewheeling diode should have the reverse
voltage rating to accommodate the maximum input
voltage. The forward voltage drop should be small in
order to get the lowest conduction dissipation for high
efficiency. The forward current rating has to be at least
equal to the LED current. A Schottky diode is
recommended for highest efficiency.
5.6
I FET RMS = I LED D
junction
Input Capacitor
The ceramic input capacitor is selected by voltage
rating and ripple current rating. To determine the input
capacitor ripple current rating, the RMS value of the
input capacitor current can be found by:
EQUATION 5-12:
The switching loss occurs during the MOSFET turn-on
and turn-off transition and can be found by:
I CIN RMS = I LED D 1 – D
EQUATION 5-9:
V IN I LED f SW
P LOSS TRAN = --------------------------------------------- Q gs2 + Q gd
I DRV
V DRV
I DRV = ---------------R GATE
Where:
RGATE = Total MOSFET gate resistance and gate
driver resistance. Qgs2 and Qgd can be found in a
MOSFET manufacturer’s data sheet.
The input capacitor ripple current rating can be
considered as ILED/2 under the worst condition, D =
50%.
The power loss in the input capacitor is:
EQUATION 5-13:
2
P LOSS CIN = I CIN RMS ESR CIN
The total power loss is:
EQUATION 5-10:
P LOSS TOT = P LOSS CON + P LOSS TRAN
DS20006250A-page 16
5.7
LED Ripple Current
The LED current is the same as inductor current. If the
LED ripple current needs to be reduced, then place a
4.7 μF/50V ceramic capacitor across the LED.
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
5.8
Frequency Dithering
The MIC3203 is designed to reduce EMI by dithering
the switching frequency ±12% in order to spread the
frequency spectrum over a wider range. This lowers
the EMI noise peaks generated by the switching
regulator.
Switching regulators generate noise by their nature and
they are the main EMI source to interference with
nearby circuits. If the switching frequency of a regulator
is modulated via frequency dithering, the energy of the
EMI is spread among many frequencies instead of
concentrated at fundamental switching frequency and
its harmonics. The MIC3203 modulates the VCS(MAX)
with amplitude ±6mV by a pseudo random generator to
generate the ±12% of the switching frequency dithering
to reduce the EMI noise peaks.
2019 Microchip Technology Inc.
DS20006250A-page 17
MIC3203/MIC3203-1
6.0
PCB LAYOUT GUIDELINES
6.4
Output Capacitor
PCB layout is critical to achieve reliable, stable, and
efficient performance. A ground plane is required to
control EMI and minimize the inductance in power and
signal return paths.
• If LED ripple current needs to be reduced, then
place a 4.7 μF/50V capacitor across the LED. The
capacitor must be placed as close to the LED as
possible.
To minimize EMI and output noise, and to ensure
proper operation of the MIC3203 regulator, follow these
guidelines.
6.5
6.1
IC
• Use thick traces to route the input and output
power lines.
• Signal and power grounds should be kept
separate and connected at only one location.
6.2
Input Capacitor
• Place the input capacitors on the same side of the
board and as close to the IC as possible.
• Keep both the VIN and PGND traces as short as
possible.
• Place several vias to the ground plane close to
the input capacitor ground terminal, but not
between the input capacitors and IC pins.
• Use either X7R or X5R dielectric ceramic input
capacitors. Do not use Y5V or Z5U type
capacitors.
• Do not replace the ceramic input capacitor with
any other type of capacitor. Any type of capacitor
can be placed in parallel with the ceramic input
capacitor.
• If a Tantalum input capacitor is placed in parallel
with the input capacitor, it must be recommended
for switching regulator applications and the
operating voltage must be derated by 50%.
• In “Hot-Plug” applications, a Tantalum or
Electrolytic bypass capacitor must be placed in
parallel to ceramic capacitor to limit the
overvoltage spike seen on the input supply with
power is suddenly applied. In this case, an
additional Tantalum or Electrolytic bypass input
capacitor of 22 μF or higher is required at the
input power connection if necessary.
6.3
Inductor
• Keep the inductor connection to the switch node
(MOSFET drain) short.
• Do not route any digital lines underneath or close
to the inductor.
• To minimize noise, place a ground plane
underneath the inductor.
DS20006250A-page 18
MOSFET
• Place the MOSFET as close as possible to the
MIC3203 to avoid trace inductance. Provide
sufficient copper area on the MOSFET ground to
dissipate the heat.
6.6
Diode
• Place the Schottky diode on the same side of the
board as the IC and input capacitor.
• The connection from the Schottky diode’s anode
to the switching node must be as short as
possible.
• The diode’s cathode connection to the RCS must
be keep as short as possible.
6.7
RC Snubber
• If an RC snubber is needed, place the RC
snubber on the same side of the board and as
close to the Schottky diode as possible.
6.8
Current Sense Resistor (RCS)
• The VIN pin and CS pin must be as close as
possible to RCS. Make a Kelvin connection to the
VIN and CS pins respectively for current sensing.
6.9
Trace Routing Recommendation
• Keep the power traces as short and wide as
possible. One current flowing loop is during the
MOSFET ON-time, the traces connecting the
input capacitor CIN, RCS, LEDs, inductor, the
MOSFET, and back to CIN. The other current
flowing loop is during the MOSFET OFF-time, the
traces connecting RCS, LED, inductor,
freewheeling diode, and back to RCS. These two
loop areas should be kept as small as possible to
minimize the noise interference,
• Keep all analog signal traces away from the
switching node and its connecting traces.
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
7.0
RIPPLE MEASUREMENTS
To properly measure ripple on either input or output of
a switching regulator, a proper ring in tip measurement
is required. Standard oscilloscope probes come with a
grounding clip or a long wire with an alligator clip.
Unfortunately, for high-frequency measurements, this
ground clip can pick-up high-frequency noise and
erroneously inject it into the measured output ripple.
The standard evaluation board accommodates a
homemade version by providing probe points for both
the input and output supplies and their respective
grounds. This requires the removing of the oscilloscope
probe sheath and ground clip from a standard
oscilloscope probe and wrapping a non-shielded bus
wire around the oscilloscope probe. If there does not
happen to be any non-shielded bus wire immediately
available, the leads from axial resistors will work. By
maintaining the shortest possible ground lengths on the
oscilloscope probe, true ripple measurements can be
obtained.
FIGURE 7-1:
Low Noise Measurement.
2019 Microchip Technology Inc.
DS20006250A-page 19
MIC3203/MIC3203-1
8.0
PACKAGING INFORMATION
8.1
Package Marking Information
8-Lead SOIC*
Dither Enabled
XXX
XXXXXX
WNNN
8-Lead SOIC*
Dither Disabled
XXX
XXXX-XXX
WNNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Example
MIC
3203YM
4560
Example
MIC
3203-1YM
4560
Product code or customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle
mark).
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information. Package may or may not include
the corporate logo.
Underbar (_) and/or Overbar (‾) symbol may not be to scale.
DS20006250A-page 20
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
8-Lead SOIC Package Outline and Recommended Land Pattern
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
2019 Microchip Technology Inc.
DS20006250A-page 21
MIC3203/MIC3203-1
NOTES:
DS20006250A-page 22
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
APPENDIX A:
REVISION HISTORY
Revision A (November 2019)
• Converted Micrel document MIC3203/MIC3203-1
to Microchip data sheet template DS20006250A.
• Minor grammatical text changes throughout.
• Updated minimum value for EN Logic Level High
in Electrical Characteristics table.
• Evaluation Board Schematic and BOM sections
from original data sheet moved to the part’s Evaluation Board User’s Guide.
2019 Microchip Technology Inc.
DS20006250A-page 23
MIC3203/MIC3203-1
NOTES:
DS20006250A-page 24
2019 Microchip Technology Inc.
MIC3203/MIC3203-1
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Examples:
Device
-X
X
X
-XX
Part No.
Dither
Junction
Temp. Range
Package
Media Type
Device:
MIC3203:
High-Brightness LED Driver Controller with
High-Side Current Sense
Dither:
= Enabled
1
=
Disabled
Junction
Temperature
Range:
Y
Package:
M
Media Type:
= 95/Tube
TR =
2,500/Reel
=
=
a) MIC3203YM:
MIC3203, DIther Enabled,
–40°C to +125°C
Temperature Range,
8-Lead SOIC, 95/Tube
b) MIC3203YM-TR:
MIC3203, Dither Enabled,
–40°C to +125°C
Temperature Range,
8-Lead SOIC, 2,500/Reel
c) MIC3203-1YM:
MIC3203, DIther Disabled,
–40°C to +125°C
Temperature Range,
8-Lead SOIC, 95/Tube
d) MIC3203-1YM-TR:
MIC3203, Dither Disabled,
–40°C to +125°C
Temperature Range,
8-Lead SOIC, 2,500/Reel
–40°C to +125°C, RoHS-Compliant
8-Lead SOIC
2019 Microchip Technology Inc.
Note 1:
Tape and Reel identifier only appears in the
catalog part number description. This identifier is
used for ordering purposes and is not printed on
the device package. Check with your Microchip
Sales Office for package availability with the
Tape and Reel option.
DS20006250A-page 25
MIC3203/MIC3203-1
NOTES:
DS20006250A-page 26
2019 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
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AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, chipKIT,
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© 2019, Microchip Technology Incorporated, All Rights Reserved.
For information regarding Microchip’s Quality Management Systems,
please visit www.microchip.com/quality.
2019 Microchip Technology Inc.
ISBN: 978-1-5224-5258-4
DS20006250A-page 27
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Fax: 949-462-9608
Tel: 951-273-7800
Raleigh, NC
Tel: 919-844-7510
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20006250A-page 28
China - Xiamen
Tel: 86-592-2388138
China - Zhuhai
Tel: 86-756-3210040
Germany - Garching
Tel: 49-8931-9700
Germany - Haan
Tel: 49-2129-3766400
Germany - Heilbronn
Tel: 49-7131-72400
Germany - Karlsruhe
Tel: 49-721-625370
Italy - Padova
Tel: 39-049-7625286
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Norway - Trondheim
Tel: 47-7288-4388
Poland - Warsaw
Tel: 48-22-3325737
Romania - Bucharest
Tel: 40-21-407-87-50
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Gothenberg
Tel: 46-31-704-60-40
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
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05/14/19
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