MSC060SMA070B

MSC060SMA070B Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B device is a 700 V, 60 mΩ SiC MOSFET in a TO-247 package. 1.1 Features The following are key features of the MSC060SMA070B device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant 1.2 Benefits The following are benefits of the MSC060SMA070B device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership 1.3 Applications The MSC060SMA070B device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution 050-7759 MSC060SMA070B Datasheet Revision A 1 2 Device Specifications This section shows the specifications for the MSC060SMA070B device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC060SMA070B device. Table 1 • Absolute Maximum Ratings Symbol Characteristic Ratings Unit VDSS Drain source voltage 700 V ID Continuous drain current at TC = 25 °C 39 A Continuous drain current at T C = 100 °C 28 IDM Pulsed drain current 100 VGS Gate-source voltage 23 to –10 V PD Total power dissipation at TC = 25 °C 143 W Linear derating factor 0.94 W/°C 1 Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics for the MSC060SMA070B device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic RθJC Junction-to-case thermal resistance TJ Operating junction temperature TSTG Storage temperature TL Soldering temperature for 10 seconds (1.6 mm from case) 260 Mounting torque, 6-32 or M3 screw 10 lbf-in 1.1 N-m Wt Min Typ Max Unit 0.70 1.05 °C/W –55 175 °C –55 150 Package weight 050-7759 MSC060SMA070B Datasheet Revision A 0.22 oz 6.2 g 2 2.2 Electrical Performance The following table shows the static characteristics for the MSC060SMA070B device. T J = 25 °C unless otherwise specified. Table 3 • Static Characteristics Symbol Characteristic Test Conditions Min V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 100 µA 700 RDS(on) Drain-source on resistance VGS = 20 V, ID = 20 A VGS(th) Gate-source threshold voltage VGS = VDS, ID = 1 mA ΔVGS(th)/ΔTJ Threshold voltage coefficient VGS = VDS, ID = 1 mA IDSS Zero gate voltage drain current VDS, = 700 V, VGS = 0 V 100 VDS = 700 V, VGS = 0 V TJ = 125 °C 500 VGS = 20 V/–10 V ±100 IGSS 1 Gate-source leakage current Typ Unit V 60 1.9 Max 75 mΩ 2.4 V –3.4 mV/° C µA nA Notes: 1. Pulse test: pulse width < 380 µs, duty cycle < 2%. The following table shows the dynamic characteristics for the MSC060SMA070B device. T J = 25 °C unless otherwise specified. Table 4 • Dynamic Characteristics Symbol Characteristic Test Conditions Ciss Input capacitance Crss Reverse transfer capacitance VGS = 0 V, VDD = 700 V, VAC = 25 mV, ƒ = 1 MHz Min Typ Coss Output capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge td(on) Turn-on delay time tr Current rise time td(off) Turn-off delay time tf Current fall time Eon Turn-on switching energy Eoff Turn-off switching energy td(on) Turn-on delay time tr Current rise time td(off) Turn-off delay time tf Current fall time Eon Turn-on switching energy 2 130 Eoff Turn-off switching energy 25 ESR Equivalent series resistance f = 1 MHz, 25 mV, drain short 2.6 Ω SCWT Short circuit withstand time VDS = 560 V, VGS = 20 V 3 µs 1175 Max Unit pF 8 130 VGS = –5 V/20 V, VDD = 470 V ID = 20 A 56 nC 15 9 VDD = 470 V, VGS = –5 V/20 V, ID = 20 A RG(ext) = 4 Ω1, Freewheeling diode = MSC060SMA070B (V GS = -5 V) 18 7 26 7 140 2 ns µJ 25 VDD = 470 V, VGS = –5 V/20 V, ID = 20 A RG(ext) = 4 Ω1 Freewheeling diode = MSC010SDA070B 050-7759 MSC060SMA070B Datasheet Revision A 20 ns 9 25 10 µJ 3 Symbol Characteristic Test Conditions Min EAS Avalanche energy, single pulse VDS = 150 V, VGS = 20 V, ID = 20 A Typ 1150 Max Unit mJ Notes: 1. RG is total gate resistance excluding internal gate driver impedance. 2. Eon includes energy of freewheeling diode. The following table shows the body diode characteristics for the MSC060SMA070B device. T J = 25 °C unless otherwise specified. Table 5 • Body Diode Characteristics 2.3 Symbol Characteristic Test Conditions VSD Diode forward voltage ISD = 20 A, VGS = 0 V 4.0 V ISD = 20 A, VGS = –5 V 4.2 V ISD = 20 A, VGS = –5 V VDD = 470 V dl/dt = –1500 A/µs 25 ns 170 nC 10 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Min Typ Max Unit Typical Performance Curves This section shows the typical performance curves for the MSC060SMA070B device. Figure 1 • Drain Current vs. Drain-to-Source Voltage Figure 2 • Drain Current vs. Drain-to-Source Voltage Figure 3 • Drain Current vs. Drain-to-Source Voltage Figure 4 • Drain Current vs. Drain-to-Source Voltage 050-7759 MSC060SMA070B Datasheet Revision A 4 Figure 3 • Drain Current vs. Drain-to-Source Voltage Figure 4 • Drain Current vs. Drain-to-Source Voltage Figure 5 • RDS(on) vs. Junction Temperature Figure 6 • Gate Charge Characteristics Figure 7 • Capacitance vs. Drain-to-Source Voltage Figure 8 • IDM vs. Gate-to-Source Voltage Figure 9 • IDM vs. VDS Third Quadrant Conduction Figure 10 • IDM vs. VDS Third Quadrant Conduction 050-7759 MSC060SMA070B Datasheet Revision A 5 Figure 9 • IDM vs. VDS Third Quadrant Conduction Figure 10 • IDM vs. VDS Third Quadrant Conduction Figure 11 • VGS(th) vs. Junction Temp. Figure 12 • Forward Safe Operating Area Figure 13 • Maximum Transient Thermal Impedance 050-7759 MSC060SMA070B Datasheet Revision A 6 3 Package Specification This section shows the package specification for the MSC060SMA070B device. 3.1 Package Outline Drawing The following figure illustrates the TO-247 package drawing for the MSC060SMA070B device. The dimensions in the figure below are in millimeters and (inches). Figure 14 • Package Outline Drawing The following table shows the MSC060SMA070B dimensions and should be used in conjunction with the package outline drawing. Table 6 • TO-247 Dimensions Symbol Min (mm) Max (mm) Min (in.) Max (in.) A 4.69 5.31 0.185 0.209 B 1.49 2.49 0.059 0.098 C 2.21 2.59 0.087 0.102 050-7759 MSC060SMA070B Datasheet Revision A 7 Symbol Min (mm) Max (mm) Min (in.) Max (in.) D 0.40 0.79 0.016 0.031 E 5.38 6.20 0.212 0.244 F 3.50 3.81 0.138 0.150 G 6.15 BSC H 20.80 21.46 0.819 0.845 I 19.81 20.32 0.780 0.800 J 4.00 4.50 0.157 0.177 K 1.01 1.40 0.040 0.055 L 2.87 3.12 0.113 0.123 M 1.65 2.13 0.065 0.084 N 15.49 16.26 0.610 0.640 O 13.50 14.50 0.531 0.571 P 16.50 17.50 0.650 0.689 Q 5.45 BSC R 2.00 2.75 0.079 0.108 S 7.10 7.50 0.280 0.295 Terminal 1 Gate Terminal 2 Drain Terminal 3 Source Terminal 4 Drain 0.242 BSC 0.215 BSC 050-7759 MSC060SMA070B Datasheet Revision A 8 Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. 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