TC4468EOE

TC4467/TC4468/TC4469 Logic-Input CMOS Quad Drivers Features General Description • High Peak Output Current: 1.2 A • Wide Operating Range: - 4.5 V to 18 V • Symmetrical Rise/Fall Times: 25 nsec • Short, Equal Delay Times: 75 nsec • Latch-proof. Will Withstand 500 mA Inductive Kickback • 3 Input Logic Choices: - AND / NAND / AND + Inv • ESD Protection on All Pins: 2 kV The TC4467/TC4468/TC4469 devices are a family of four-output CMOS buffers/MOSFET drivers with 1.2 A peak drive capability. Unlike other MOSFET drivers, these devices have two inputs for each output. The inputs are configured as logic gates: NAND (TC4467), AND (TC4468) and AND/INV (TC4469). Applications • • • • • • General Purpose CMOS Logic Buffer Driving All Four MOSFETs in an H-Bridge Direct Small Motor Driver Relay or Peripheral Drivers CCD Driver Pin-Switching Network Driver The TC4467/TC4468/TC4469 drivers can continuously source up to 250 mA into ground referenced loads. These devices are ideal for direct driving low current motors or driving MOSFETs in a H-bridge configuration for higher current motor drive (see Section 5.0 for details). Having the logic gates onboard the driver can help to reduce component count in many designs. The TC4467/TC4468/TC4469 devices are very robust and highly latch-up resistant. They can tolerate up to 5 V of noise spiking on the ground line and can handle up to 0.5 A of reverse current on the driver outputs. The TC4467/4468/4469 devices are available in commercial, industrial and military temperature ranges. Package Types 14-Pin PDIP/CERDIP 14 VDD 1A 1 1B 2 2A 3 2B 4 3A 5 13 1Y TC4467 TC4468 TC4469 12 2Y 11 3Y 10 4Y 3B 6 9 4B GND 7 8 4A 16-Pin SOIC (Wide) 16 15 14 13 VDD VDD 12 3Y 11 4Y 7 10 4B 8 9 4A 1A 1B 2A 2B 1 2 3 4 3A 5 3B 6 GND GND TC4467 TC4468 TC4469  2001-2012 Microchip Technology Inc. 1Y 2Y DS21425C-page 1 TC4467/TC4468/TC4469 Logic Diagrams TC4467 TC4468 TC4469 VDD VDD VDD 14 14 1A 1B 1 2 13 1Y 2A 2B 3 4 12 2Y 3A 3B 5 6 11 3Y 4A 4B 8 9 10 4Y 7 GND DS21425C-page 2 1A 1 1B 2 2A 3 2B 4 12 2Y 11 3Y 10 4Y 7 GND VDD 14 13 1Y 3A 5 3B 6 4A 8 4B 9 TC446X 1A 1 1B 2 2A 3 2B 4 13 1Y 12 2Y 3A 5 3B 6 4A 8 4B 9 Output 11 3Y 10 4Y 7 GND  2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 1.0 ELECTRICAL CHARACTERISTICS †Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings† Supply Voltage ...............................................................+20 V Input Voltage ............................. (GND – 5 V) to (VDD + 0.3 V) Package Power Dissipation: (TA 70°C) PDIP...................................................................800 mW CERDIP .............................................................840 mW SOIC ..................................................................760 mW Package Thermal Resistance: CERDIP RJ-A ...................................................100°C/W CERDIP RJ-C .....................................................23°C/W PDIP RJ-A ..........................................................80°C/W PDIP RJ-C ..........................................................35°C/W SOIC RJ-A ..........................................................95°C/W SOIC RJ-C ..........................................................28°C/W Operating Temperature Range: C Version ................................................... 0°C to +70°C E Version.................................................-40°C to +85°C M Version ..............................................-55°C to +125°C Maximum Chip Temperature ....................................... +150°C Storage Temperature Range .........................-65°C to +150°C ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise noted, TA = +25°C, with 4.5 V VDD18 V. Parameters Sym Min Typ Max Units Conditions Input Logic 1, High Input Voltage VIH 2.4 — VDD V Note 3 Logic 0, Low Input Voltage VIL — — 0.8 V Note 3 Input Current IIN -1.0 — +1.0 µA 0 VVINVDD High Output Voltage VOH VDD – 0.025 — — V ILOAD = 100 µA (Note 1) Low Output Voltage VOL — — 0.15 V ILOAD = 10 mA (Note 1) Output Resistance RO — 10 15  IOUT = 10 mA, VDD = 18 V Peak Output Current IPK — 1.2 — A Continuous Output Current IDC — — 300 mA — — 500 I — 500 — mA Rise Time tR — 15 25 nsec Figure 4-1 Fall Time tF — 15 25 nsec Figure 4-1 Delay Time tD1 — 40 75 nsec Figure 4-1 Delay Time tD2 — 40 75 nsec Figure 4-1 Power Supply Current IS — 1.5 4 mA Power Supply Voltage VDD 4.5 — 18 V Output Latch-Up Protection Withstand Reverse Current Single Output Total Package 4.5 VVDD 16 V Switching Time (Note 1) Power Supply Note 1: 2: 3: Note 2 Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching times are ensured by design. When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt will cause high-power dissipation in the device. The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.  2001-2012 Microchip Technology Inc. DS21425C-page 3 TC4467/TC4468/TC4469 ELECTRICAL SPECIFICATIONS (OPERATING TEMPERATURES) Electrical Characteristics: Unless otherwise noted, over operating temperature range with 4.5 V VDD18 V. Parameters Sym Min Typ Max Units Conditions Logic 1, High Input Voltage VIH 2.4 — — V Logic 0, Low Input Voltage VIL — — 0.8 V Note 3 Input Current IIN -10 — 10 µA 0 VVINVDD High Output Voltage VOH VDD – 0.025 — — V ILOAD = 100 µA (Note 1) Input Note 3 Output Low Output Voltage VOL — — 0.30 V ILOAD = 10 mA (Note 1) Output Resistance RO — 20 30  IOUT = 10 mA, VDD = 18 V Peak Output Current IPK — 1.2 — A Continuous Output Current IDC — — 300 mA Single Output — — 500 I — 500 — mA Rise Time tR — 15 50 nsec Fall Time tF — 15 50 nsec Figure 4-1 Delay Time tD1 — 40 100 nsec Figure 4-1 Delay Time tD2 — 40 100 nsec Figure 4-1 Latch-Up Protection Withstand Reverse Current Total Package 4.5 VVDD 16 V Switching Time (Note 1) Figure 4-1 Power Supply Power Supply Current IS — — 8 mA Power Supply Voltage VDD 4.5 — 18 V Note 1: 2: 3: Note 2 Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching times are ensured by design. When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt will cause high-power dissipation in the device. The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device. TRUTH TABLE Part No. TC4467 NAND Inputs A H H L TC4468 AND L H H L TC4469 AND/INV L H H L L Inputs B H L H L H L H L H L H L Outputs TC446X L H H H H L L L L H L L Legend: H = High L = Low DS21425C-page 4  2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: TA = +25°C, with 4.5 V VDD18 V. 140 140 2200 0 pF p 120 2200 pF 100 1600 pF p 80 1000 pF 100 tFALL (nsec) tRISE (nsec) 120 60 1000 pF 60 470 pF 40 470 pF 20 100 pF 20 100 pF p 3 5 7 FIGURE 2-1: Voltage. 9 11 13 VSUPPLY (V) 15 0 19 17 Rise Time vs. Supply 5 7 9 11 13 VSUPPLY (V) 15 19 17 Fall Time vs. Supply 140 120 5V 120 5V 100 tFALL (nsec) 100 80 10 V 15 V 60 80 40 20 20 0 100 FIGURE 2-2: Load. 0 100 10,000 1000 CLOAD (pF) Rise Time vs. Capacitive 10 V 15 V 60 40 10,000 1000 CLOAD (pF) FIGURE 2-5: Load. 25 Fall Time vs. Capacitive 80 VSUPPLY = 17.5 V CLOAD = 470 pF CLOAD = 4 470 pF DELAY TIME (nsec) 20 3 FIGURE 2-4: Voltage. 140 tRISE (nsec) 80 40 0 TIME (nsec) 1500 pF tFALL 15 tRISE 10 60 tD1 40 tD2 20 5 0 -50 0 -25 0 25 50 75 100 125 4 6 TEMPERATURE (°C) FIGURE 2-3: Temperature. Rise/Fall Times vs.  2001-2012 Microchip Technology Inc. 8 10 12 14 16 18 VSUPPLY (V) FIGURE 2-6: Supply Voltage. Propagation Delay Time vs. DS21425C-page 5 TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: TA = +25°C, with 4.5 V VDD18 V. 140 70 VDD = 12 V VDD = 17.5 V = 470 pF VIN INPUT RISING DELAY TIME (nsec) DELAY TIME (nsec) 120 100 tD2 80 60 tD1 INPUT FALLING 40 tD1 50 tD2 40 30 20 0 60 1 2 3 4 FIGURE 2-7: Times. 5 6 VDRIVE (V) 7 8 20 -60 10 9 Input Amplitude vs. Delay -40 -20 0 FIGURE 2-10: vs. Temperatures. 20 40 60 °C) 80 100 120 Propagation Delay Times 3.5 2.5 VDD = 17.5 V 2.0 IQUIESCENT (mA) IQUIESCENT (mA) 3.0 OUTPUTS = 0 1.5 1.0 OUTPUTS = 1 0.5 6 8 10 12 VSUPPLY (V) 14 16 OUTPUTS = 1 1.0 -40 -20 0 FIGURE 2-11: vs. Temperature. 20 40 60 TJUNCTION (°C) 80 100 120 Quiescent Supply Current 35 35 30 30 TJ = +150°C 25 RDS(ON) (Ω) 25 RDS(ON) (Ω) 1.5 0 -60 18 FIGURE 2-8: Quiescent Supply Current vs. Supply Voltage. 20 TJ = +25°C 15 20 10 5 5 4 6 FIGURE 2-9: Resistance. DS21425C-page 6 8 10 12 V SUPPLY (V) 14 High-State Output 16 18 TJ = +150°C 15 10 0 OUTPUTS = 0 2.0 0.5 0 4 2.5 0 TJ = +25°C 4 6 FIGURE 2-12: Resistance. 8 10 12 V SUPPLY (V) 14 16 18 Low-State Output  2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 2.0 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: (Load on single output only). 60 60 VDD = 18 V 50 1000 pF 40 30 50 00 kHz 20 200 kHz 10 0 100 FIGURE 2-13: Capacitive Load. 30 20 100 pF p 0 10 10,000 Supply Current vs. 100 1000 FREQUENCY (kHz) FIGURE 2-16: Frequency. 60 2 MHz Supply Current vs. 2200 pF VDD = 12 V 50 50 ISUPPLY (mA) 40 1 MHz 30 20 500 kHz 10 FIGURE 2-14: Capacitive Load. 40 1000 pF p 30 20 100 pF 10 200 kHz 0 100 20 kHz 0 10,000 1000 CLOAD (pF) Supply Current vs. 10 100 FREQUENCY (kHz) FIGURE 2-17: Frequency. 60 1000 10,000 Supply Current vs. 60 VDD = 6 V VDD = 6 V 50 50 40 40 30 ISUPPLY (mA) ISUPPLY (mA) 10,000 60 VDD = 12 V ISUPPLY (mA) 40 10 20 kHz 1000 CLOAD (pF) 2200 pF 50 1 MH MHz ISUPPLY (mA) ISUPPLY (mA) VDD = 18 V 2 MH Hz 2 MHz 20 1 MHz 500 kHz 200 kHz 20 kHz 10 0 100 FIGURE 2-15: Capacitive Load. 1000 CLOAD (pF) Supply Current vs.  2001-2012 Microchip Technology Inc. 2200 pF 30 20 1000 pF 10 100 pF 10,000 0 10 FIGURE 2-18: Frequency. 100 1000 FREQUENCY (kHz) 10,000 Supply Current vs. DS21425C-page 7 TC4467/TC4468/TC4469 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE 14-Pin PDIP, CERDIP 16-Pin SOIC (Wide) Symbol Symbol 1A 1A Input A for Driver 1, TTL/CMOS Compatible Input 1B 1B Input B for Driver 1, TTL/CMOS Compatible Input 2A 2A Input A for Driver 2, TTL/CMOS Compatible Input 2B 2B Input B for Driver 2, TTL/CMOS Compatible Input 3A 3A Input A for Driver 3, TTL/CMOS Compatible Input Input B for Driver 3, TTL/CMOS Compatible Input 3B 3B GND GND Description Ground — GND 4A 4A Input A for Driver 4, TTL/CMOS Compatible Input Ground 4B 4B Input B for Driver 4, TTL/CMOS Compatible Input 4Y 4Y Output for Driver 4, CMOS Push-Pull Output 3Y 3Y Output for Driver 3, CMOS Push-Pull Output 2Y 2Y Output for Driver 2, CMOS Push-Pull Output Output for Driver 1, CMOS Push-Pull Output 1Y 1Y VDD VDD Supply Input, 4.5 V to 18 V — VDD Supply Input, 4.5 V to 18 V DS21425C-page 8  2001-2012 Microchip Technology Inc. TC4467/TC4468/TC4469 4.0 DETAILED DESCRIPTION 4.4 4.1 Supply Bypassing The supply current versus frequency and supply current versus capacitive load characteristic curves will aid in determining power dissipation calculations. Microchip Technology's CMOS drivers have greatly reduced quiescent DC power consumption. Large currents are required to charge and discharge large capacitive loads quickly. For example, charging a 1000 pF load to 18 V in 25 nsec requires 0.72 A from the device's power supply. To ensure low supply impedance over a wide frequency range, a 1 µF film capacitor in parallel with one or two low-inductance, 0.1 µF ceramic disk capacitors with short lead lengths (