CMOS 1.8 V to 5.5 V, 2.5 Ω
SPDT Switch/2:1 Mux in Tiny SC70 Package
ADG779
FEATURES
FUNCTIONAL BLOCK DIAGRAM
1.8 V to 5.5 V single supply
2.5 Ω on resistance
0.75 Ω on-resistance flatness
−3 dB bandwidth >200 MHz
Rail-to-rail operation
6-lead SC70 package
Fast switching times
tON 20 ns
tOFF 6 ns
Typical power consumption ( 200 MHz.
Because of the advanced submicron process, −3 dB bandwidth
of greater than 200 MHz can be achieved.
6.
Low Power Dissipation. CMOS construction ensures low
power dissipation.
7.
14 ns Switching Times.
The ADG779 operates from a single supply range of 1.8 V to
5.5 V, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices, Inc.
The ADG779 is available in a 6-lead SC70 package.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
© 2005 Analog Devices, Inc. All rights reserved.
ADG779
TABLE OF CONTENTS
Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................6
Applications....................................................................................... 1
Terminology .......................................................................................7
Functional Block Diagram .............................................................. 1
Typical Performance Characteristics ..............................................8
General Description ......................................................................... 1
Test Circuits..................................................................................... 10
Product Highlights ........................................................................... 1
Outline Dimensions ....................................................................... 12
Revision History ............................................................................... 2
Ordering Guide .......................................................................... 12
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
REVISION HISTORY
10/05—Rev. 0 to Rev. A
Updated Format..................................................................Universal
Changes to Table 1............................................................................ 3
Changes to Table 2............................................................................ 4
Changes to Table 3............................................................................ 5
Changes to Terminology Section.................................................... 7
Changes to Ordering Guide .......................................................... 12
7/01—Revision 0: Initial Version
Rev. A | Page 2 of 12
ADG779
SPECIFICATIONS
VDD = 5 V ± 10%, GND = 0 V 1
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On-Resistance Match Between Channels (ΔRON)
25°C
B Version
−40°C to
+85°C
0 V to VDD
2.5
5
0.1
LEAKAGE CURRENTS 2
Source Off Leakage IS (Off )
Channel On Leakage ID, IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
1.2
±0.05
±0.05
nA typ
nA typ
2.4
0.8
V min
V max
μA typ
μA max
VIN = VINL or VINH
±0.1
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
RL = 300 Ω, CL = 35 pF
VS = 3 V, see Figure 15
RL = 300 Ω, CL = 35 pF
VS = 3 V, see Figure 15
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 3 V, see Figure 16
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 17
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 18
RL = 50 Ω, CL = 5 pF, see Figure 19
f = 1 MHz
f = 1 MHz
VDD = 5.5 V
Digital Inputs = 0 V or 5 V
6
DYNAMIC CHARACTERISTICS2
tON
0.75
±0.01
±0.01
0.005
14
20
tOFF
3
Break-Before-Make Time Delay, tD
8
Off Isolation
−67
−87
−62
−82
200
7
27
6
1
Channel-to-Channel Crosstalk
Bandwidth –3 dB
CS (Off )
CD, CS (On)
POWER REQUIREMENTS
IDD
0.001
1.0
1
2
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
0.8
On-Resistance Flatness (RFLAT (ON))
Unit
Temperature range is B Version, −40°C to +85°C.
Guaranteed by design, not subject to production test.
Rev. A | Page 3 of 12
μA typ
μA max
VS = 0 V to VDD, IS = −10 mA, see Figure 12
VS = 0 V to VDD, IS = −10 mA
VS = 0 V to VDD, IS = −10 mA
VDD = 5.5 V
VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 13
VS = VD = 1 V, or VS = VD = 4.5 V, see Figure 14
ADG779
VDD = 3 V ± 10%, GND = 0 V 1
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On-Resistance Match Between Channels (ΔRON)
25°C
6
B Version
−40°C to
+85°C
0 V to VDD
7
10
0.1
0.8
On-Resistance Flatness (RFLAT (ON))
LEAKAGE CURRENTS 2
Source Off Leakage IS (Off )
Channel On Leakage ID, IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
DYNAMIC CHARACTERISTICS2
tON
2.5
±0.01
±0.01
8
Off Isolation
–67
–87
–62
–82
200
7
27
μA typ
μA max
VIN = VINL or VINH
±0.1
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
RL = 300 Ω, CL = 35 pF
VS = 2 V, see Figure 15
RL = 300 Ω, CL = 35 pF
VS = 2 V, see Figure 15
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 2 V, see Figure 16
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 17
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 18
RL = 50 Ω, CL = 5 pF, see Figure 19
f = 1 MHz
f = 1 MHz
VDD = 3.3 V
Digital Inputs = 0 V or 3 V
1
Bandwidth −3 dB
CS (Off )
CD, CS (On)
POWER REQUIREMENTS
IDD
0.001
1.0
1
2
VS = 0 V to VDD, IS = –10 mA
VDD = 3.3 V
VS = 3 V/1 V, VD = 1 V/3 V, see Figure 13
VS = VD = 1 V, or VS = VD = 3 V, see Figure 14
V min
V max
7
Channel-to-Channel Crosstalk
VS = 0 V to VDD, IS = –10 mA
2.0
0.8
24
Break-Before-Make Time Delay, tD
VS = 0 V to VDD, IS = –10 mA, see Figure 12
nA typ
nA typ
16
4
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Test Conditions/Comments
±0.05
±0.05
0.005
tOFF
Unit
Temperature range is B Version, −40°C to +85°C.
Guaranteed by design, not subject to production test.
Rev. A | Page 4 of 12
μA typ
μA max
ADG779
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
VDD to GND
Analog, Digital Inputs 1
Peak Current, S or D
Continuous Current, S or D
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Junction Temperature
SC70 Package, Power Dissipation
θJA Thermal Impedance
θJC Thermal Impedance
Lead Temperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
Reflow Soldering (Pb-free)
Peak Temperature
Time at Peak Temperature
1
Rating
−0.3 V to +7 V
−0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
100 mA (pulsed at 1 ms,
10% duty cycle max)
30 mA
−40°C to +85°C
−65°C to +150°C
150°C
315 mW
332°C/W
120°C/W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 4. Truth Table
ADG779 IN
0
1
Switch S1
On
Off
215°C
220°C
260 (+0/−5)°C
10 sec to 40 sec
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. A | Page 5 of 12
Switch S2
Off
On
ADG779
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
IN 1
6
S2
VDD 2
5 D
TOP VIEW
(Not to Scale)
GND 3
4
S1
Figure 2. Pin Configuration
Table 5. Pin Function Descriptions
Pin No.
1
2
3
4
5
6
Mnemonic
IN
VDD
GND
S1
D
S2
Description
Logic Control Input.
Most Positive Power Supply Potential.
Ground (0 V) Reference.
Source Terminal. Can be an input or an output.
Drain Terminal. Can be an input or an output.
Source Terminal. Can be an input or an output.
Rev. A | Page 6 of 12
02491-002
ADG779
ADG779
TERMINOLOGY
VDD
Most positive power supply potential.
CD (Off)
Off switch drain capacitance. Measured with reference to
ground.
IDD
Positive supply current.
CD, CS (On)
On switch capacitance. Measured with reference to ground.
GND
Ground (0 V) reference.
CIN
Digital input capacitance.
S
Source terminal. Can be an input or an output.
tON
Delay time between the 50% and 90% points of the digital input
and switch on condition.
D
Drain terminal. Can be an input or an output.
tOFF
Delay time between the 50% and 90% points of the digital input
and switch off condition.
IN
Logic control input.
VD (VS)
Analog voltage on drain (D) and source (S) terminals.
tBBM
On or off time measured between the 80% points of both
switches when switching from one to another.
RON
Ohmic resistance between the D and S.
RFLAT (ON)
Flatness is defined as the difference between the maximum and
minimum value of on resistance as measured.
ΔRON
On-resistance mismatch between any two channels.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during on/off switching.
Off Isolation
A measure of unwanted signal coupling through an off switch.
IS (Off)
Source leakage current with the switch off.
Crosstalk
A measure of unwanted signal that is coupled through from one
channel to another because of parasitic capacitance.
ID (Off)
Drain leakage current with the switch off.
−3 dB Bandwidth
The frequency at which the output is attenuated by 3 dB.
ID, IS (On)
Channel leakage current with the switch on.
On Response
The frequency response of the on switch.
VINL
Maximum input voltage for Logic 0.
Insertion Loss
The loss due to the on resistance of the switch.
VINH
Minimum input voltage for Logic 1.
THD + N
The ratio of harmonic amplitudes plus noise of a signal to the
fundamental.
IINL (IINH)
Input current of the digital input.
CS (Off)
Off switch source capacitance. Measured with reference to
ground.
Rev. A | Page 7 of 12
ADG779
TYPICAL PERFORMANCE CHARACTERISTICS
0.15
6.0
5.5
VDD = 2.7V
VDD = 5V
VD = 4.5V/1V
VS = 1V/4.5V
TA = 25°C
5.0
0.10
4.5
VDD = 4.5V
VDD = 3V
3.5
CURRENT (nA)
RON (Ω)
4.0
3.0
2.5
VDD = 5V
2.0
ID, IS (ON)
0.05
0
1.5
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VD OR VS – DRAIN OR SOURCE VOLTAGE (V)
–0.05
02491-003
0
Figure 3. On Resistance as a Function of VD (VS) Single Supplies
10
20
30
40
50
60
TEMPERATURE (°C)
70
80
90
Figure 6. Leakage Currents as a Function of Temperature
0.15
6.0
5.5
VDD = 3V
VD = 3V/1V
VS = 1V/3V
VDD = 3V
5.0
+85°C
4.5
0.10
+25°C
CURRENT (nA)
4.0
RON (Ω)
0
02491-006
IS (OFF)
0.5
–40°C
3.5
3.0
2.5
2.0
0.05
ID, IS (ON)
0
1.5
1.0
0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
VD OR VS – DRAIN OR SOURCE VOLTAGE (V)
Figure 4. On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V
0
10
20
30
40
50
60
TEMPERATURE (°C)
70
80
90
02491-007
IS (OFF)
–0.05
02491-004
0
Figure 7. Leakage Currents as a Function of Temperature
10m
6.0
VDD = 5V
VDD = 5V
5.5
1m
5.0
4.5
100µ
ISUPPLY (A)
3.5
+85°C
3.0
2.5
+25°C
2.0
–40°C
10µ
1µ
100n
1.5
1.0
10n
0
1n
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VD OR VS – DRAIN OR SOURCE VOLTAGE (V)
5.0
Figure 5. On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 5 V
1
10
100
1k
10k
100k
FREQUENCY (Hz)
1M
10M
Figure 8. Supply Current vs. Input Switching Frequency
Rev. A | Page 8 of 12
100M
02491-008
0.5
02491-005
RON (Ω)
4.0
ADG779
–30
–40
0
VDD = 5V, 3V
VDD = 5V
–60
ON RESPONSE (dB)
OFF ISOLATION (dB)
–50
–70
–80
–90
–100
–2
–4
–110
100k
1M
10M
FREQUENCY (Hz)
100M
–6
10k
02491-009
–130
10k
Figure 9. Off Isolation vs. Frequency
VDD = 5V, 3V
–60
–70
–80
–90
–100
–110
–120
100k
1M
10M
FREQUENCY (Hz)
100M
02491-010
CROSSTALK (dB)
–50
–130
10k
1M
10M
FREQUENCY (Hz)
Figure 11. On Response vs. Frequency
–30
–40
100k
Figure 10. Crosstalk vs. Frequency
Rev. A | Page 9 of 12
100M
02491-011
–120
ADG779
TEST CIRCUITS
IDS
V1
D
A
S
D
ID (OFF)
A
S
VD
VS
0.1µF
Figure 14. On Leakage
VDD
VIN
50%
50%
VDD
RL
300Ω
IN
CL
35pF
VOUT
90%
90%
VOUT
tON
GND
tOFF
02491-015
D
S
VS
Figure 15. Switching Times
S1
VS1
VDD
VIN
VDD
D
S2
VS2
RL2
300Ω
IN
VIN
D2
CL2
35pF
VOUT
VOUT
50%
0V
50%
50%
0V
tD
GND
Figure 16. Break-Before-Make Time Delay, tD
Rev. A | Page 10 of 12
50%
tD
02491-016
0.1µF
A
VD
Figure 13. Off Leakage
Figure 12. On Resistance
ID (ON)
VS
02491-013
RON = V1/IDS
02491-012
VS
D
02491-014
IS (OFF)
S
ADG779
VDD
0.1µF
0.1µF
NETWORK
ANALYZER
VDD
S
S
VS
D
RL
50Ω
OFF ISOLATION = 20 log
VIN
VOUT
VS
INSERTION LOSS = 20 log
VDD
0.1µF
VDD
S1
S2
D
50Ω
IN
CHANNEL-TO-CHANNEL CROSSTALK = 20 log
R
50Ω
GND
VOUT
VS
02491-018
RL
50Ω
Figure 18. Channel-to-Channel Crosstalk
Rev. A | Page 11 of 12
VOUT
VOUT WITH SWITCH
VOUT WITHOUT SWITCH
Figure 19. Bandwidth
Figure 17. Off Isolation
NETWORK
ANALYZER
RL
50Ω
GND
02491-017
GND
VOUT
02491-019
VIN
VS
50Ω
IN
VS
D
VOUT
NETWORK
ANALYZER
VDD
50Ω
50Ω
IN
VDD
ADG779
OUTLINE DIMENSIONS
2.20
2.00
1.80
1.35
1.25
1.15
6
5
4
1
2
3
2.40
2.10
1.80
PIN 1
0.65 BSC
1.30 BSC
1.00
0.90
0.70
1.10
0.80
0.30
0.15
0.10 MAX
0.40
0.10
SEATING
PLANE
0.22
0.08
0.46
0.36
0.26
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203-AB
Figure 20. 6-Lead Thin Shrink Small Outline Transistor Package [SC70]
(KS-6)
Dimensions shown in millimeters
ORDERING GUIDE
Model
ADG779BKS-R2
ADG779BKS-REEL
ADG779BKS-REEL7
ADG779BKSZ-R2 2
ADG779BKSZ-REEL2
ADG779BKSZ-REEL72
1
2
Temperature Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Package Description
6-Lead Thin Shrink Small Outline Transistor Package (SC70)
6-Lead Thin Shrink Small Outline Transistor Package (SC70)
6-Lead Thin Shrink Small Outline Transistor Package (SC70)
6-Lead Thin Shrink Small Outline Transistor Package (SC70)
6-Lead Thin Shrink Small Outline Transistor Package (SC70)
6-Lead Thin Shrink Small Outline Transistor Package (SC70)
Brand on these packages is limited to three characters due to space constraints.
Z = Pb-free part.
© 2005 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C02491–0–10/05(A)
Rev. A | Page 12 of 12
Package
Option
KS-6
KS-6
KS-6
KS-6
KS-6
KS-6
Branding 1
SKB
SKB
SKB
S0M
S0M
S0M
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