0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
ADG779BKS

ADG779BKS

  • 厂商:

    AD(亚德诺)

  • 封装:

  • 描述:

    ADG779BKS - CMOS 1.8 V to 5.5 V, 2.5 ohm SPDT Switch/2:1 Mux In Tiny SC70 Package - Analog Devices

  • 数据手册
  • 价格&库存
ADG779BKS 数据手册
a FEATURES 1.8 V to 5.5 V Single Supply 2.5 On Resistance 0.75 On-Resistance Flatness –3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SC70 Package Fast Switching Times t ON 20 ns t OFF 6 ns Typical Power Consumption (200 MHz. 6. Low Power Dissipation. CMOS construction ensures low power dissipation. 7. 14 ns Switching Times. R EV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2001 ADG779–SPECIFICATIONS1 (V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (∆RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS2 Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation 0.75 DD =5V 10%, GND = 0 V) B Version –40 C to 25 C +85 C 0 V to VDD 2 .5 5 6 0.1 0.8 1.2 ± 0.01 ± 0.01 ± 0.05 ± 0.05 Unit V Ω typ Ω max Ω typ Ω max Ω typ Ω max nA typ nA typ Test Conditions/Comments VS = 0 V to VDD, IS = –10 mA, Test Circuit 1 VS = 0 V to VDD, IS = –10 mA VS = 0 V to VDD, IS = –10 mA VDD = 5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V, Test Circuit 2 VS = VD = 1 V, or VS = VD = 4.5 V, Test Circuit 3 2.4 0.8 0.005 ± 0.1 14 20 3 6 8 1 –67 –87 –62 –82 200 7 27 V min V max µA typ µA max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ VIN = VINL or VINH Channel-to-Channel Crosstalk Bandwidth –3 dB CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 Ω, CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 Ω, CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 Ω, CL = 35 pF, VS1 = VS2 = 3 V, Test Circuit 5 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, Test Circuit 7 RL = 50 Ω, CL = 5 pF, Test Circuit 8 f = 1 MHz f = 1 MHz VDD = 5.5 V Digital Inputs = 0 V or 5 V 0.001 1.0 µA typ µA max NOTES 1 Temperature ranges are as follows: B Version, –40°C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. – 2– REV. 0 SPECIFICATIONS Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (∆RON) 1 ADG779 (VDD = 3 V 10%, GND = 0 V) B Version –40 C to 25 C +85 C 0 V to VDD 7 10 0.1 0.8 2.5 ± 0.01 ± 0.01 ± 0.05 ± 0.05 Unit V Ω typ Ω max Ω typ Ω max Ω typ nA typ nA typ Test Conditions/Comments 6 VS = 0 V to VDD, IS = –10 mA, Test Circuit 1 VS = 0 V to VDD, IS = –10 mA VS = 0 V to VDD, IS = –10 mA VDD = 3.3 V VS = 3 V/1 V, VD = 1 V/3 V, Test Circuit 2 VS = VD = 1 V, or VS = VD = 3 V, Test Circuit 3 On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation 2 2.0 0.8 0.005 ± 0.1 16 24 4 7 8 1 –67 –87 –62 –82 200 7 27 V min V max µA typ µA max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ VIN = VINL or VINH Channel-to-Channel Crosstalk Bandwidth –3 dB CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 Ω, CL = 35 pF VS = 2 V, Test Circuit 4 RL = 300 Ω, CL = 35 pF VS = 2 V, Test Circuit 4 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 2 V, Test Circuit 5 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, Test Circuit 7 RL = 50 Ω, CL = 5 pF, Test Circuit 8 f = 1 MHz f = 1 MHz VDD = 3.3 V Digital Inputs = 0 V or 3 V 0.001 1.0 µA typ µA max NOTES 1 Temperature ranges are as follows: B Version, –40 °C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. 0 – 3– ADG779 ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C unless otherwise noted) TERMINOLOGY VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V Analog, Digital Inputs2 . . . . . . . . . . –0.3 V to VDD + 0.3 V or 30 mA, Whichever Occurs First Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle max) Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C SC70 Package, Power Dissipation . . . . . . . . . . . . . . . . 315 mW θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 332°C/W θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 120°C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. Table I. Truth Table ADG779 IN 0 1 Switch S1 ON OFF Switch S2 OFF ON Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Ohmic resistance between D and S. On resistance match between any two channels i.e., RON max – RON min. RFLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source Leakage Current with the switch “OFF.” IS (OFF) ID, IS (ON) Channel Leakage Current with the switch “ON.” VD (VS) Analog Voltage on Terminals D, S. CS (OFF) “OFF” Switch Source Capacitance. CD, CS (ON) “ON” Switch Capacitance. tON Delay between applying the digital control input and the output switching on. tOFF Delay between applying the digital control input and the output switching off. tD “OFF” time or “ON” time measured between the 90% points of both switches, when switching from one address state to another. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an “OFF” switch. On Response The frequency response of the “ON” switch. On Loss The loss due to the “ON” resistance of the switch. VDD GND S D IN RON ∆RON PIN CONFIGURATION 6-Lead SC70 IN 1 VDD 2 GND 3 6 S2 D S1 ADG779 TOP VIEW (Not to Scale) 5 4 ORDERING GUIDE Model ADG779BKS Temperature Range –40°C to +85°C Package Description SC70 (Plastic Surface Mount) Package Option KS-6 Branding Information* SKB *Brand = Brand on these packages is limited to three characters due to space constraints. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG779 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE –4– REV. 0 Typical Performance Characteristics– ADG779 6.0 5.5 5.0 4.5 4.0 3.5 RON – 0.15 VDD = 2.7V TA = 25 C 0.10 VDD = 5V VD = 4.5V/1V VS = 1V/4.5V VDD = 3.0V CURRENT – nA VDD = 4.5V 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD OR VS – DRAIN OR SOURCE VOLTAGE – V VDD = 5.0V ID, I S (ON) 0.05 0 IS (OFF) –0.05 0 10 20 30 40 50 60 TEMPERATURE – C 70 80 90 TPC 1. On Resistance as a Function of VD (VS) Single Supplies TPC 4. Leakage Currents as a Function of Temperature 6.0 5.5 5.0 4.5 4.0 –40 C 3.5 +85 C +25 C CURRENT – nA 0.15 VDD = 3V VDD = 3V VD = 3V/1V VS = 1V/3V 0.10 RON – 3.0 2.5 2.0 1.5 1.0 0.5 0 0.05 ID, I S (ON) 0 IS (OFF) –0.05 0 0.5 1.0 1.5 2.0 2.5 VD OR VS – DRAIN OR SOURCE VOLTAGE – V 3.0 0 10 20 30 40 50 60 TEMPERATURE – C 70 80 90 TPC 2. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V 6.0 5.5 5.0 4.5 4.0 3.5 +85 C VDD = 5V TPC 5. Leakage Currents as a Function of Temperature 10m VDD = 5V 1m 100 I SUPPLY – A 3.0 3.5 4.0 4.5 5.0 RON – 10 1 3.0 2.5 2.0 1.5 1.0 +25 C –40 C 100n 10n 0.5 0 0 0.5 1.0 1.5 2.0 2.5 1n 1 10 100 VD OR VS – DRAIN OR SOURCE VOLTAGE – V 1k 10k 100k FREQUENCY – Hz 1M 10M 100M TPC 3. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V TPC 6. Supply Current vs. Input Switching Frequency REV. 0 –5– ADG779 –30 VDD = 5V, 3V –40 –50 OFF ISOLATION – dB 0 VDD = 5V ON RESPONSE – dB 100k 1M 10M FREQUENCY – Hz 100M 0 –60 –70 –80 –90 –100 –110 –120 –130 10k –2 –4 –6 10k 100k 1M 10M FREQUENCY – Hz 100M TPC 7. Off Isolation vs. Frequency TPC 9. On Response vs. Frequency –30 VDD = 5V, 3V –40 –50 CROSSTALK – dB –60 –70 –80 –90 –100 –110 –120 –130 10k 100k 1M FREQUENCY – Hz 10M 100M 0 TPC 8. Crosstalk vs. Frequency –6– REV. 0 ADG779 Test Circuits IDS V1 S VS D VS IS (OFF) A S D ID (OFF) A VD ID (ON) S VS D A VD RON = V1/I DS Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage 0.1 F VDD VIN VDD 50% 90% 50% 90% S VS IN GND D RL 300 CL 35pF VOUT VOUT tON tOFF Test Circuit 4. Switching Times 0.1 F VDD VIN D D2 RL2 300 GND CL2 35pF VOUT VS1 VS2 VIN S1 S2 IN VDD 0V 50% 0V 50% 50% 50% VOUT tD tD Test Circuit 5. Break-Before-Make Time Delay, tD VDD VDD 0.1 F NETWORK ANALYZER S IN D VIN GND RL 50 VOUT 50 NETWORK ANALYZER VOUT RL 50 0.1 F VDD 0.1 F VDD S1 S2 D VDD VDD S R 50 NETWORK ANALYZER 50 VS IN D 50 VS VOUT 50 VS IN GND VIN GND RL 50 VOUT OFF ISOLATION = 20 LOG VS CROSSTALK = 20 LOG CHANNEL-TO-CHANNEL VOUT VS INSERTION LOSS = 20 LOG VOUT WITH SWITCH VOUT WITHOUT SWITCH Test Circuit 6. Off Isolation Test Circuit 7. Channel-to-Channel Crosstalk Test Circuit 8. Bandwidth REV. 0 –7– ADG779 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 6-Lead Plastic Surface Mount Package (SC70) (KS-6) C02491–1.5–7/01(0) 8 0.007 (0.18) 0 0.004 (0.10) 0.012 (0.30) 0.004 (0.10) 0.087 (2.20) 0.071 (1.80) 0.053 (1.35) 0.045 (1.15) PIN 1 6 1 5 2 4 3 0.094 (2.40) 0.071 (1.80) 0.026 (0.65) BSC 0.051 (1.30) BSC 0.039 (1.00) 0.031 (0.80) 0.004 (0.10) 0.000 (0.00) 0.043 (1.10) 0.031 (0.80) 0.012 (0.30) SEATING 0.006 (0.15) PLANE –8– REV. 0 PRINTED IN U.S.A.
ADG779BKS 价格&库存

很抱歉,暂时无法提供与“ADG779BKS”相匹配的价格&库存,您可以联系我们找货

免费人工找货