ADG742BKS

a FEATURES 1.8 V to 5.5 V Single Supply 2 (Typ) On Resistance Low On-Resistance Flatness –3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SC70 Fast Switching Times t ON 18 ns t OFF 12 ns Typical Power Consumption (200 MHz. 5. Low Power Dissipation. CMOS construction ensures low power dissipation. 6. Fast tON/tOFF. 7. Tiny 6-Lead SC70 package. R EV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000 ADG741/ADG742–SPECIFICATIONS1 unless otherwise noted.) (VDD = 5 V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Charge Injection Off Isolation 2 10%, GND = 0 V. All specifications –40 C to +85 C 25 C B Version –40 C to +85 C 0 V to VDD Unit V Ω typ Ω max Ω typ Ω max nA typ nA max nA typ nA max nA typ nA max V min V max µA typ µA max ns typ ns max ns typ ns max pC typ dB typ dB typ MHz typ pF typ pF typ pF typ Test Conditions/Comments 2 3 0.5 4 1.0 VS = 0 V to VDD, IS = –10 mA; Test Circuit 1 VS = 0 V to VDD, IS = –10 mA VDD = 5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = VD = 1 V, or 4.5 V; Test Circuit 3 ± 0.01 ± 0.25 ± 0.01 ± 0.25 ± 0.01 ± 0.25 ± 0.35 ± 0.35 ± 0.35 2.4 0.8 0.005 ± 0.1 12 18 8 12 5 –55 –75 200 17 17 38 VIN = VINL or VINH Bandwidth –3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 Ω, CL = 35 pF VS = 3 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF VS = 3 V; Test Circuit 4 VS = 2 V, RS = 0 Ω, CL = 1 nF; Test Circuit 5 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 6 RL = 50 Ω, CL = 5 pF; Test Circuit 7 VDD = 5.5 V Digital Inputs = 0 V or 5 V 0.001 1.0 µA typ µA max NOTES 1 Temperature ranges are as follows: B Versions: – 40°C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. – 2– REV. 0 ADG741/ADG742 SPECIFICATIONS1 (V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) DD =3V 10%, GND = 0 V. All specifications –40 C to +85 C unless otherwise noted.) 25 C B Version –40 C to +85 C 0 V to VDD 3.5 5 1.5 ± 0.01 ± 0.25 ± 0.01 ± 0.25 ± 0.01 ± 0.25 6 Unit V Ω typ Ω max Ω typ nA typ nA max nA typ nA max nA typ nA max V min V max µA typ µA max ns typ ns max ns typ ns max pC typ dB typ dB typ MHz typ pF typ pF typ pF typ VDD = 3.3 V Digital Inputs = 0 V or 3 V 0.001 1.0 µA typ µA max VIN = VINL or VINH Test Conditions/Comments On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS2 Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Charge Injection Off Isolation VS = 0 V to VDD, IS = –10 mA; Test Circuit 1 VS = 0 V to VDD, IS = –10 mA VDD = 3.3 V VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = VD = 1 V, or 3 V; Test Circuit 3 ± 0.35 ± 0.35 ± 0.35 2.0 0.4 0.005 ± 0.1 14 20 8 13 4 –55 –75 200 17 17 38 Bandwidth –3 dB CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 Ω, CL = 35 pF VS = 2 V, Test Circuit 4 RL = 300 Ω, CL = 35 pF VS = 2 V, Test Circuit 4 VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Test Circuit 5 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 6 RL = 50 Ω, CL = 5 pF; Test Circuit 7 NOTES 1 Temperature ranges are as follows: B Versions: –40 °C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. 0 – 3– ADG741/ADG742 ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C unless otherwise noted) VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V Analog, Digital Inputs2 . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V or 30 mA, Whichever Occurs First Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle Max) Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . .150°C SC70 Package θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 332°C/W θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 120°C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . .215°C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .220°C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. Table I. Truth Table ADG741 In 0 1 ADG742 In 1 0 Switch Condition OFF ON ORDERING GUIDE Model ADG741BKS ADG742BKS Temperature Range –40°C to +85°C –40°C to +85°C Brand* SFB SGB Package Description SC70 SC70 Package Option KS-6 KS-6 *Brand = Brand on these packages is limited to three characters due to space constraints. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG741/ADG742 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE –4– REV. 0 ADG741/ADG742 PIN CONFIGURATIONS 6-Lead Plastic Surface Mount (SC70) TERMINOLOGY D1 S2 ADG741/ ADG742 6V DD 5 NC GND 3 TOP VIEW 4 IN (Not to Scale) NC = NO CONNECT VDD GND S D IN RON RFLAT(ON) IS (OFF) ID (OFF) ID, IS (ON) V D (V S) CS (OFF) CD (OFF) CD, CS (ON) tON tOFF Off Isolation Charge Injection Bandwidth On Response On Loss Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Ohmic Resistance Between D and S. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source Leakage Current with the Switch “OFF.” Drain Leakage Current with the Switch “OFF.” Channel Leakage Current with the Switch “ON.” Analog Voltage on Terminals D, S. “OFF” Switch Source Capacitance. “OFF” Switch Drain Capacitance. “ON” Switch Capacitance. Delay between applying the digital control input and the output switching on. See Test Circuit 4. Delay between applying the digital control input and the output switching off. A measure of Unwanted Signal Coupling Through an “OFF” Switch. A measure of the glitch impulse transferred from the digital input to the analog output during switching. The frequency at which the output is attenuated by –3 dBs. The frequency response of the “ON” switch. The voltage drop across the “ON” switch seen on the On Response vs. Frequency plot as how many dBs the signal is away from 0 dB at very low frequencies. REV. 0 –5– ADG741/ADG742 –Typical Performance Characteristics 3.5 VDD = 2.7V 3.0 2.5 VDD = 3.0V 2.0 RON – 1.5 1.0 VDD = 4.5V TA = 25 C 1m 10m VDD = 5V 100 ISUPPLY – A 4.5 5.0 10 VDD = 5.0V 1 100n 10n 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VD OR VS – DRAIN OR SOURCE VOLTAGE – V 1n 10 100 1k 100k 10k FREQUENCY – Hz 1M 10M TPC 1. On Resistance as a Function of VD (VS) Single Supplies TPC 4. Supply Current vs. Input Switching Frequency 3.5 VDD = 3V 3.0 +85 C OFF ISOLATION – dB 2.5 +25 C 2.0 –10 –20 –30 –40 –50 –60 –70 –80 –90 VDD = 5V, 3V RON – –40 C 1.5 1.0 0.5 –100 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VD OR VS – DRAIN OR SOURCE VOLTAGE – V –110 10k 100k 10M 1M FREQUENCY – Hz 100M TPC 2. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V TPC 5. Off Isolation vs. Frequency 3.5 VDD = 5V 3.0 2.5 +85 C 2.0 RON – +25 C 1.5 –40 C 0 VDD = 3V ON RESPONSE – dB 2.5 3.0 3.5 4.0 4.5 5.0 –2 1.0 –4 0.5 0 0 0.5 1.0 1.5 2.0 VD OR VS – DRAIN OR SOURCE VOLTAGE – V –6 10k 100k 1M 10M FREQUENCY – Hz 100M TPC 3. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V TPC 6. On Response vs. Frequency –6– REV. 0 ADG741/ADG742 Test Circuits IDS V1 IS (OFF) ID (OFF) S D A VD VS S D ID (ON) A VD S D A VS VS RON = V1/IDS Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage VDD 0.1 F VIN ADG741 VDD S VS D RL 300 GND VOUT VIN IN CL 35pF VOUT 50% 50% ADG742 50% 90% 50% 90% tON tOFF Test Circuit 4. Switching Times VDD VDD RS VS IN GND S D VOUT CL 1nF VIN ADG741 ON OFF VIN VOUT ADG742 VOUT QINJ = CL VOUT Test Circuit 5. Charge Injection VDD 0.1 F VDD 0.1 F VDD S D RL 50 VOUT VDD S D RL 50 GND VOUT IN VS VIN GND IN VS VIN Test Circuit 6. Off Isolation Test Circuit 7. Bandwidth REV. 0 –7– ADG741/ADG742 APPLICATIONS INFORMATION The ADG741/ADG742 belongs to Analog Devices’ new family of CMOS switches. This series of general-purpose switches have improved switching times, lower on resistance, higher bandwidth, low power consumption and low leakage currents. ADG741/ADG742 Supply Voltages Functionality of the ADG741/ADG742 extends from 1.8 V to 5.5 V single supply, which makes it ideal for battery-powered instruments, where important design parameters are power efficiency and performance. It is important to note that the supply voltage effects the input signal range, the on resistance, and the switching times of the part. By looking at the typical performance characteristics and the specifications, the effects of the power supplies can be clearly seen. For VDD = 1.8 V operation, RON is typically 40 Ω over the temperature range. On Response vs. Frequency The dominant effect of the output capacitance, CD, causes the pole breakpoint frequency to occur first. Therefore, in order to maximize bandwidth a switch must have a low input and output capacitance and low on resistance. The On Response vs. Frequency plot for the ADG741/ADG742 can be seen in TPC 6. Off Isolation Off isolation is a measure of the input signal coupled through an off switch to the switch output. The capacitance, CDS, couples the input signal to the output load, when the switch is off, as shown in Figure 2. CDS S VIN CD D CLOAD RLOAD VOUT Figure 1 illustrates the parasitic components that affect the ac performance of CMOS switches (the switch is shown surrounded by a box). Additional external capacitances will further degrade some performance. These capacitances affect feedthrough, crosstalk and system bandwidth. CDS S RON VIN CD D CLOAD RLOAD VOUT Figure 2. Off Isolation Is Affected by External Load Resistance and Capacitance Figure 1. Switch Represented by Equivalent Parasitic Components The transfer function that describes the equivalent diagram of the switch (Figure 1) is of the form (A)s shown below.  s( RON CDS ) + 1  A( s ) = RT    s( RON CT RT ) + 1    where: CT = CLOAD + CD + CDS RT = RLOAD /(RLOAD + RON) The larger the value of CDS, larger values of feedthrough will be produced. The typical performance characteristic graph of TPC 5 illustrates the drop in off-isolation as a function of frequency. From dc to roughly 1 MHz, the switch shows better than –75 dB isolation. Up to frequencies of 10 MHz, the off isolation remains better than –55 dB. As the frequency increases, more and more of the input signal is coupled through to the output. Off-isolation can be maximized by choosing a switch with the smallest CDS as possible. The values of load resistance and capacitance affect off isolation also, as they contribute to the coefficients of the poles and zeros in the transfer function of the switch when open.  s( RLOAD CDS )  A( s ) =   s( RLOAD )(CT ) + 1 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 6-Lead Plastic Surface Mount (SC70) 0.087 (2.20) 0.071 (1.80) 0.053 (1.35) 0.045 (1.15) PIN 1 6 1 5 2 4 3 0.094 (2.40) 0.071 (1.80) 0.026 (0.65) BSC 0.051 (1.30) BSC 0.039 (1.00) 0.031 (0.80) 0.004 (0.10) 0.000 (0.00) 0.043 (1.10) 0.031 (0.80) 0.012 (0.30) SEATING 0.006 (0.15) PLANE 8 0.007 (0.18) 0 0.004 (0.10) 0.012 (0.30) 0.004 (0.10) –8– REV. 0 PRINTED IN U.S.A. C02076–2.5–10/00 (rev.0) The signal transfer characteristic is dependent on the switch channel capacitance, CDS. This capacitance creates a frequency zero in the numerator of the transfer function A(s). Because the switch on resistance is small, this zero usually occurs at high frequencies. The bandwidth is a function of the switch output capacitance combined with CDS and the load capacitance. The frequency pole corresponding to these capacitances appears in the denominator of A(s).