Dual, Precision JFET High Speed Operational Amplifier OP249
FEATURES
Fast slew rate: 22 V/μs typical Settling time (0.01%): 1.2 μs maximum Offset voltage: 300 μV maximum High open-loop gain: 1000 V/mV minimum Low total harmonic distortion: 0.002% typical Improved replacement for AD712, LT1057, OP215, TL072, and MC34082
PIN CONFIGURATIONS
OUT A –IN A +IN A V–
1 2 3 4
OP249
A B
8 7 6 5
V+ OUT B
00296-001
00296-002
–IN B +IN B
Figure 1. 8-Lead CERDIP (Q-8) and 8-Lead PDIP (N-8)
+IN A
1 2 3 4 8
–IN A OUT A V+ OUT B
APPLICATIONS
Output amplifier for fast DACs Signal processing Instrumentation amplifiers Fast sample-and-holds Active filters Low distortion audio amplifiers Input buffer for ADCs Servo controllers
V– +IN B –IN B
A
7 6 5
OP249
B
Figure 2. 8-Lead SOIC (R-8)
GENERAL DESCRIPTION
The OP249 is a high speed, precision dual JFET op amp, similar to the popular single op amp, the OP42. The OP249 outperforms available dual amplifiers by providing superior speed with excellent dc performance. Ultrahigh open-loop gain (1 kV/mV minimum), low offset voltage, and superb gain linearity makes the OP249 the industry’s first true precision, dual high speed amplifier. With a slew rate of 22 V/μs typical and a fast settling time of less than 1.2 μs maximum to 0.01%, the OP249 is an ideal choice for high speed bipolar DAC and ADC applications. The excellent dc performance of the OP249 allows the full accuracy of high resolution CMOS DACs to be realized.
0.01
Symmetrical slew rate, even when driving large load, such as, 600 Ω or 200 pF of capacitance and ultralow distortion, make the OP249 ideal for professional audio applications, active filters, high speed integrators, servo systems, and buffer amplifiers. The OP249 provides significant performance upgrades to the TL072, AD712, OP215, MC34082, and LT1057.
870ns
100 90
TA = 25°C VS = ±15V VO = 10V p-p RL = 10kΩ AV = 1
100 90
00296-003
00296-004
10mV
500ns
0.001 20
5V
1µs
100
1k
10k 20k
Figure 3. Fast Settling (0.01%)
Figure 4. Low Distortion, AV = 1, RL = 10 kΩ
Figure 5. Excellent Output Drive, RL = 600 Ω
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2007 Analog Devices, Inc. All rights reserved.
00296-005
10 0%
10 0%
OP249 TABLE OF CONTENTS
Features .............................................................................................. 1 Applications....................................................................................... 1 Pin Configurations ........................................................................... 1 General Description ......................................................................... 1 Revision History ............................................................................... 2 Specifications..................................................................................... 3 Electrical Characteristics............................................................. 3 Absolute Maximum Ratings............................................................ 6 ESD Caution.................................................................................. 6 Typical Performance Characteristics ..............................................7 Applications Information .............................................................. 13 Open-Loop Gain Linearity ....................................................... 14 Offset Voltage Adjustment ........................................................ 14 Settling Time............................................................................... 14 DAC Output Amplifier.............................................................. 15 Disscusion on Driving ADCs ................................................... 16 Outline Dimensions ....................................................................... 18 Ordering Guide .......................................................................... 19
REVISION HISTORY
5/07—Rev. E to Rev. F Updated Format..................................................................Universal Changes to Table 1............................................................................ 3 Changes to Table 2............................................................................ 4 Changes to Table 3 and Table 4....................................................... 5 Changes to Table 5............................................................................ 6 Changes to Figure 31...................................................................... 11 Changes to Figure 37 and Figure 38............................................. 12 Deleted OP249 SPICE Macro-Model Section ............................ 14 Deleted Figure 18; Renumbered Sequentially ............................ 14 Deleted Table I ................................................................................ 15 Changes to Discussion on Driving ADCs Section..................... 17 Updated Outline Dimensions ....................................................... 18 Changes to Ordering Guide .......................................................... 19 9/01—Rev. D to Rev. E Edits to Features and Pin Connections ..........................................1 Edits to Electrical Characteristics .............................................. 2, 3 Edits to Absolute Maximum Ratings, Package Type, and Ordering Guide..................................................................................4 Deleted Wafer Test Limits and Dice Characteristics Section ......5 Edits to Typical Performance Characteristics................................8 Edits to Macro-Model Figure........................................................ 15 Edits to Outline Dimensions......................................................... 17
Rev. F | Page 2 of 20
OP249 SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = ±15 V, TA = 25°C, unless otherwise noted. Table 1.
Parameter Offset Voltage Long Term Offset Voltage 1 Offset Stability Input Bias Current Input Offset Current Input Voltage Range 2 Symbol VOS VOS IB IOS IVR Conditions Min OP249A Typ 0.2 1.5 30 6 12.5 ±11 Common-Mode Rejection Power-Supply Rejection Ratio Large Signal Voltage Gain Output Voltage Swing CMR PSRR AVO VO VCM = ±11 V VS = ± 4.5 V to ±18 V VO = ±10 V, RL = 2 kΩ R L = 2 kΩ 80 1000 ±12.0 Short-Circuit Current Limit ISC Output shorted to ground ±20 Supply Current Slew Rate Gain Bandwidth Product 3 Settling Time Phase Margin Differential Input Impedance Open-Loop Output Resistance Voltage Noise Voltage Noise Density ISY SR GBW tS ΘM ZIN RO en p-p en No load, VO = 0 V RL = 2 kΩ, CL = 50 pF 10 V step 0.01% 4 0 dB gain −33 5.6 22 4.7 0.9 55 1012||6 35 2 75 26 17 16 0.003 ±15 −12.5 36 ±50 7.0 18 3.5 1.2 ±20 –33 5.6 22 4.7 0.9 55 1012||6 35 2 75 26 17 16 0.003 ±15 −12.5 90 12 1400 12.5 Max 0.5 0.8 75 25 ±11 80 31.6 500 ±12.0 –12.5 36 ±50 7.0 –12.5 90 12 1200 12.5 Min OP249F Typ 0.2 1.5 30 6 12.5 Max 0.7 1.0 75 25 Unit mV mV μV/month pA pA V V V dB μV/V V/mV V V V mA mA mA mA V/μs MHz μs Degrees Ω||pF Ω μV p-p nV/√Hz nV/√Hz nV/√Hz nV/√Hz pA/√Hz V
VCM = 0 V, TA = 25°C VCM = 0 V, TA = 25°C
50
18 3.5
1.2
Current Noise Density Voltage Supply Range
1 2 3
in VS
0.1 Hz to 10 Hz fO = 10 Hz fO = 100 Hz fO = 1 kHz fO = 10 kHz fO = 1 kHz ±4.5
±18
±4.5
±18
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent wafer lots at 125°C with LTPD of three. Guaranteed by CMR test. Guaranteed by design. 4 Settling time is sample tested.
Rev. F | Page 3 of 20
OP249
VS = ±15 V, TA = 25°C, unless otherwise noted. Table 2.
Parameter Offset Voltage Input Bias Current Input Offset Current Input Voltage Range 1 Symbol VOS IB IOS IVR Conditions VCM = 0 V, TA = 25°C VCM = 0 V TA = 25°C ±11 Common-Mode Rejection Power Supply Rejection Ratio Large Signal Voltage Gain Output Voltage Swing CMR PSRR AVO VO VCM = ±11 V VS = ±4.5 V to ±18 V VO = ±10 V; RL = 2 kΩ R L = 2 kΩ 76 500 ±12.0 Short-Circuit Current Limit ISC Output shorted to ground ±20 Supply Current Slew Rate Gain Bandwidth Product 2 Settling Time Phase Margin Differential Input Impedance Open-Loop Output Resistance Voltage Noise Voltage Noise Density ISY SR GBW tS ΘM ZIN RO en p-p en No load; VO = 0 V RL = 2 kΩ, CL = 50 pF 10 V step 0.01% 0 dB gain −33 5.6 22 4.7 0.9 55 1012||6 35 2 75 26 17 16 0.003 ±15 −12.5 36 ±50 7.0 −12.0 90 12 1100 12.5 Min OP249G Typ 0.4 40 10 12.5 Max 2.0 75 25 Unit mV pA pA V V V dB μV/V V/mV V V V mA mA mA mA V/μs MHz μs Degree Ω||pF Ω μV p-p nV/√Hz nV/√Hz nV/√Hz nV/√Hz pA/√Hz V
50
18
1.2
Current Noise Density Voltage Supply Range
1 2
in VS
0.1 Hz to 10 Hz fO = 10 Hz fO = 100 Hz fO = 1 kHz fO = 10 kHz fO = 1 kHz ±4.5
±18
Guaranteed by CMR test. Guaranteed by design.
Rev. F | Page 4 of 20
OP249
VS = ±15 V, −40°C ≤ TA ≤ +85°C for F grade and −55°C ≤ TA ≤ +125°C for A grade, unless otherwise noted. Table 3.
Parameter Offset Voltage Offset Voltage Temperature Coefficient Input Bias Current 1 Input Offset Current1 Input Voltage Range 2 Symbol VOS TCVOS IB IOS IVR ±11 Common-Mode Rejection Power Supply Rejection Ratio Large Signal Voltage Gain Output Voltage Swing CMR PSRR AVO VO VCM = ±11 V VS = ±4.5 V to ±18 V RL = 2 kΩ; VO = ±10 V R L = 2 kΩ 76 500 ±12 Supply Current
1 2
Conditions
Min
OP249A Typ Max 0.12 1.0 1 4 0.04 12.5 −12.5 110 5 1400 12.5 −12.5 5.6 5 20 4
Min
OP249F Typ Max 0.5 1.1 2.2 0.3 0.02 12.5 6 4.0 1.2
Unit mV μV/°C nA nA V V V dB μV/V V/mV V V V mA
±11 80 50 250 ±12 7.0 −12.5 5.6 7.0 −12.5 90 7 1200 12.5
100
ISY
No load, VO = 0 V
TA = 85°C for F grade; TA = 125°C for A grade. Guaranteed by CMR test.
VS = ±15 V, −40°C ≤ TA ≤ +85°C, unless otherwise noted. Table 4.
Parameter Offset Voltage Offset Voltage Temperature Coefficient Input Bias Current 1 Input Offset Current1 Input Voltage Range 2 Symbol VOS TCVOS IB IOS IVR Conditions Min OP249G Typ 1.0 6 0.5 0.04 12.5 −12.5 95 10 1200 12.5 −12.5 5.6 Max 3.6 25 4.5 1.5 Unit mV μV/°C nA nA V V V dB μV/V V/mV V V V mA
±11 Common-Mode Rejection Power Supply Rejection Ratio Large Signal Voltage Gain Output Voltage Swing CMR PSRR AVO VO VCM = ±11 V VS = ±4.5 V to ±18 V RL = 2 kΩ; VO = ±10 V R L = 2 kΩ 76 250 ±12.0 Supply Current
1 2
100
ISY
No load, VO = 0 V
7.0
TA = 85°C. Guaranteed by CMR test.
Rev. F | Page 5 of 20
OP249 ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter Supply Voltage Input Voltage 2 Differential Input Voltage2 Output Short-Circuit Duration Storage Temperature Range Operating Temperature Range OP249A (Q) OP249F (Q) OP249G (N, R) Junction Temperature Range OP249A (Q), OP249F (Q) OP249G (N, R) Lead Temperature (Soldering, 60 sec)
1 2
1
Rating ±18 V ±18 V 36 V Indefinite −65°C to +175°C −55°C to +125°C −40°C to +85°C −40°C to +85°C −65°C to +175°C −65°C to +150°C 300°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Table 6. Thermal Resistance
Package Type 8-Lead CERDIP (Q) 8-Lead PDIP (N) 8-Lead SOIC (R)
1
θJA1 134 96 150
θJC 12 37 41
Unit °C/W °C/W °C/W
Absolute maximum ratings apply to packaged parts, unless otherwise noted. For supply voltages less than ±18 V, the absolute maximum input voltage is equal to the supply voltage.
θJA is specified for worst-case mounting conditions, that is, θJA is specified for device in socket for CERDIP and PDIP packages; θJA is specified for device soldered to printed circuit board for SOIC package.
ESD CAUTION
Rev. F | Page 6 of 20
OP249 TYPICAL PERFORMANCE CHARACTERISTICS
120 100 TA = 25°C VS = ±15V RL = 2kΩ 0 GAIN 45 90 Θm = 55 20 0 –20 1k 135 180 225 100M 120 TA = 25°C VS = ±15V
OPEN-LOOP GAIN (dB)
80 60 40
POWER SUPPLY REJECTION (dB)
100
80 +PSRR 60 –PSRR 40
PHASE
PHASE (°C)
20
00296-009
10k
100k
1M
10M
00296-006
0 10
100
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 6. Open-Loop Gain, Phase vs. Frequency
65 VS = ±15V 10 28
Figure 9. Power Supply Rejection vs. Frequency
60
8
GAIN BANDWIDTH PRODUCT (MHz)
26
VS = ±15V RL = 2kΩ CL = 50pF
PHASE MARGIN (°C)
SLEW RATE (V/µs)
24 –SR 22 +SR
Θm 55 GBW 50 4 6
20
18
00296-010
–50
–25
0
25
50
75
100
00296-007
45 –75
2 125
16 –75
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 7. Phase Margin, Gain Bandwidth Product vs. Temperature
140 120 100 80 60 40 20 0 100
18
00296-008
Figure 10. Slew Rate vs. Temperature
28
TA = 25°C VS = ±15V
26
COMMON-MODE REJECTION (dB)
TA = 25°C VS = ±15V RL = 2kΩ
SLEW RATE (V/µs)
24
22
20
16
1k
10k
100k
1M
10M
0
0.2
0.4
0.6
0.8
1.0
FREQUENCY (Hz)
DIFFERENTIAL INPUT VOLTAGE (V)
Figure 8. Common-Mode Rejection vs. Frequency
Figure 11. Slew Rate vs. Differential Input Voltage
Rev. F | Page 7 of 20
00296-011
OP249
35 TA = 25°C VS = ±15V 30
0.01 TA = 25°C VS = ±15V VO = 10V p-p RL = 10kΩ AV = 1
SLEW RATE (V/µs)
25
NEGATIVE
20
POSITIVE
15
10
00296-012 00296-015
5 0 100 200 300 400 CAPACITIVE LOAD (pF)
500
0.001 20
100
1k
10k
20k
Figure 12. Slew Rate vs. Capacitive Load
10 8 6 TA = 25°C VS = ±15V AVCL = 1 0.1% 4 2 0 –2 –4 –6 –8 –10 0 200 400 600 800 SETTLING TIME (ns) 0.1%
00296-013
Figure 15. Distortion vs. Frequency
0.01 TA = 25°C VS = ±15V VO = 10V p-p RL = 2kΩ AV = 1
OUTPUT STEP SIZE (V)
0.01%
0.01%
1000
0.001 20
100
1k
10k
20k
Figure 13. Step Size vs. Settling Time
100 TA = 25°C VS = ±15V
Figure 16. Distortion vs. Frequency
0.01 TA = 25°C VS = ±15V VO = 10V p-p RL = 600Ω AV = 1
VOLTAGE NOISE DENSITY (nV/ Hz)
80
60
40
20
00296-014
0 0 100 FREQUENCY (Hz) 1k
10k
0.001 20
100
1k
10k
20k
Figure 14. Voltage Noise Density vs. Frequency
Figure 17. Distortion vs. Frequency
Rev. F | Page 8 of 20
00296-017
00296-016
OP249
0.1 TA = 25°C VS = ±15V VO = 10V p-p RL = 10kΩ AV = 1
+1µV 500mV 1s
–1µV
00296-018
0.01 20
100
1k
10k
20k
BANDWIDTH (0.1Hz TO 10Hz) TA = 25°C, VS = ±15V
Figure 18. Distortion vs. Frequency
60 0.1 TA = 25°C VS = ±15V VO = 10V p-p RL = 2kΩ AV = 10 50
CLOSED-LOOP GAIN (dB)
Figure 21. Low Frequency Noise
TA = 25°C VS = ±15V AVCL = 100
40 30 20 10 0 –10
AVCL = 10 AVCL = 5
AVCL = 1
00296-022
00296-019
0.01 20
–20 1k
10k
100k
1M
10M
00296-021
100M
100
1k
10k
20k
FREQUENCY (Hz)
Figure 19. Distortion vs. Frequency
50
Figure 22. Closed-Loop Gain vs. Frequency
0.1 TA = 25°C VS = ±15V VO = 10V p-p RL = 600kΩ AV = 10
40
TA = 25°C VS = ±15V
IMPEDANCE (Ω)
30 AVCL = 1 20
AVCL = 10
10
00296-023
AVCL = 100
00296-020
0.01 20
0 100
1k
10k
100k
1M
10M
100
1k
10k
20k
FREQUENCY (Hz)
Figure 20. Distortion vs. Frequency
Figure 23. Closed-Loop Output Impedance vs. Frequency
Rev. F | Page 9 of 20
OP249
30
20 15
OUTPUT VOLTAGE SWING (V)
25
TA = 25°C RL = 2kΩ
OUTPUT VOLTAGE (V p-p)
10 5 0 –5 –10
00296-027
20
15 AD8512 10 OP249
00296-024
5
AD712 0 1k
–15 –20
1M FREQUENCY (Hz)
10M
0
±5
±10 SUPPLY VOLTAGE (V)
±15
±20
Figure 24. Output Voltage vs. Frequency
90 80 70 VS = ±15V RL = 2kΩ VIN = 100mV p-p
Figure 27. Output Voltage Swing vs. Supply Voltage
6.0 VS = ±15V NO LOAD 5.8
OVERSHOOT (%)
60 50 40 30 20
AVCL = 1 NEGATIVE EDGE AVCL = 1 POSITIVE EDGE
SUPPLY CURRENT (mA)
00296-025
5.6
5.4
00296-028
10 0
AVCL = 5 0 100 200 300 400
500
5.2 –75
–50
–25
0
25
50
75
100
125
LOAD CAPACITANCE (pF)
TEMPERATURE (°C)
Figure 25. Small Overshoot vs. Load Capacitance
16 14 TA = 25°C VS = ±15V 5.8 +VOHM = |–VOHM| 10 8 6 4
00296-026
Figure 28. Supply Current vs. Temperature
6.0
MAXIMUM OUTPUT SWING (V)
SUPPLY CURRENT (mA)
12
5.6 TA = +125°C 5.4 TA = –55°C
TA = +25°C
5.2 2 0 100
1k LOAD RESISTANCE (Ω)
10k
5.0 0 5 10 SUPPLY VOLTAGE (V) 15
20
Figure 26. Maximum Output Voltage Swing vs. Load Resistance
Figure 29. Supply Current vs. Supply Voltage
Rev. F | Page 10 of 20
00296-029
OP249
180 160 140 120 UNITS 100 80 60 40
00296-030
10k
TA = 25°C VS = ±15V 415 × OP249 (830 OP AMPS) INPUT BIAS CURRENT (pA)
VS = ±15V VCM = 0V 1k
100
10
00296-033
20 0 –1000 –800 –600 –400 –200
0
200
400
600
800
1000
1 –75
–50
–25
0
25
50
75
100
125
VOS (µV)
TEMPERATURE (°C)
Figure 30. VOS Distribution (N-8)
Figure 33. Input Bias Current vs. Temperature
300 270 240 210 180 UNITS 150 120 90 60 30 0 0 2 4 6 8 10 12 14 16 18 20 22
00296-031
104
VS = ±15V –40°C TO +85°C (830 OP AMPS)
TA = 25°C VS = ±15V 103
BIAS CURRENT (pA)
102
101
00296-034
24
100 –15
–10
–5
0
5
10
15
TCVOS (µV/°C)
COMMON-MODE VOLTAGE (V)
Figure 31. TCVOS Distribution (N-8)
50 VS = ±15V 40 40 50
Figure 34. Bias Current vs. Common-Mode Voltage
TA = 25°C VS = ±15V
30
INPUT BIAS CURRENT (pA)
00296-032
OFFSET VOLTAGE (µV)
30
20
20
10
10
00296-035
0
0
1
2
3
4
5
0
0
2
4
6
8
10
TIME AFTER POWER APPLIED (Minutes)
TIME AFTER POWER APPLIED (Minutes)
Figure 32. Offset Voltage Warm-Up Drift
Figure 35. Bias Current Warm-Up Drift
Rev. F | Page 11 of 20
OP249
80 80
SHORT-CIRCUIT OUTPUT CURRENT (mA)
TA = 25°C VCM = 0V
VS = ±15V SOURCE 60 SINK
INPUT OFFSET CURRENT (pA)
60
40
40
20
00296-036
20
00296-038
0 –75
–50
–25
0
25
50
75
100
125
0 –75
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 36. Input Offset Current vs. Temperature
12000 VS = ±15V 10000
Figure 38. Short-Circuit Output Current vs. Junction Temperature
OPEN-LOOP GAIN (V/mV)
8000 RL = 10kΩ 6000 RL = 2kΩ
4000
2000
00296-037
0 –75
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
Figure 37. Open-Loop Gain vs. Temperature
Rev. F | Page 12 of 20
OP249 APPLICATIONS INFORMATION
V+ +IN VOUT
100 90
–IN
10 0%
5V A) OP249
1µs
100 90
V–
Figure 39. Simplified Schematic (1/2 OP249)
10 0%
2
00296-039
OP249
+3V
3
1/2
5V
1
1µs B) LT1057
5kΩ
+18V
6 8
100 90
OP249
+3V
5 4
1/2
7
00296-040
5kΩ
–18V
10 0%
00296-041
Figure 40. Burn-In Circuit
5V C) AD712
1µs
The OP249 represents a reliable JFET amplifier design, featuring an excellent combination of dc precision and high speed. A rugged output stage provides the ability to drive a 600 Ω load and still maintain a clean ac response. The OP249 features a large signal response that is more linear and symmetric than previously available JFET input amplifiers. Figure 41 compares the large signal response of the OP249 to other industry-standard dual JFET amplifiers. Typically, the slewing performance of the JFET amplifier is specified as a number of V/μs. There is no discussion on the quality, that is, linearity and symmetry of the slewing response.
Figure 41. Large-Signal Transient Response, AV = 1, VIN = 20 V p-p, ZL = 2 kΩ//200 pF, VS = ±15 V
The OP249 was carefully designed to provide symmetrically matched slew characteristics in both the negative and positive directions, even when driving a large output load. The slewing limitation of the amplifier determines the maximum frequency at which a sinusoidal output can be obtained without significant distortion. However, it is important to note that the nonsymmetric slewing typical of previously available JFET amplifiers adds a higher series of harmonic energy content to the resulting response—and an additional dc output component. Examples of potential problems of nonsymmetric slewing behavior can be in audio amplifier applications, where a natural low distortion sound quality is desired and in servo or signal processing systems where a net dc offset cannot be tolerated. The linear and symmetric slewing feature of the OP249 makes it an ideal choice for applications that exceed the full power bandwidth range of the amplifier.
Rev. F | Page 13 of 20
OP249
R4 +V
100 90
VIN R1 200kΩ
R3
OP249
R2 31Ω
1/2
VOUT
R5 50kΩ
–V
Figure 44. Offset Adjustment for Inverting Amplifier Configuration
10 0%
00296-042
+V R5 R3 50kΩ R1 200kΩ R2 33Ω –V VIN R4
50mV
1µs
OP249
VOS ADJUST RANGE = ±V GAIN = VOUT VIN =1+
1/2
VOUT
Figure 42. Small-Signal Transient Response, AV = 1, ZL = 2 kΩ||100 pF, No Compensation, VS = ±15 V
As with most JFET input amplifiers, the output of the OP249 can undergo phase inversion if either input exceeds the specified input voltage range. Phase inversion does not damage the amplifier, nor does it cause an internal latch-up condition. Supply decoupling should be used to overcome inductance and resistance associated with supply lines to the amplifier. A 0.1 μF and a 10 μF capacitor should be placed between each supply pin and ground.
R2 R1
R5 R4 + R2
00296-045
R5 IF R2