Audio Dual Matched PNP Transistor
SSM2220
Data Sheet
PIN CONNECTION DIAGRAM
Low voltage noise at 100 Hz, 1 nV/√Hz maximum
High gain bandwidth: 190 MHz typical
Gain at IC = 1 mA, 165 typical
Tight gain matching: 3% maximum
Outstanding logarithmic conformance: rBE = 0.3 Ω typical
Low offset voltage: 200 μV maximum
APPLICATIONS
SSM2220
TOP VIEW
(Not to Scale)
C1 1
8
C2
B1 2
7
B2
E1 3
6
E2
NC 4
5
NC
NOTES
1. NC = NO CONNECT. THIS PIN IS
NOT CONNECTED INTERNALLY.
Microphone preamplifiers
Tape head preamplifiers
Current sources and mirrors
Low noise precision instrumentation
Voltage controlled amplifiers/multipliers
03096-001
FEATURES
Figure 1.
GENERAL DESCRIPTION
The SSM2220 is a dual, low noise, matched PNP transistor, which
has been optimized for use in audio applications.
The ultralow input voltage noise of the SSM2220 is typically only
0.7 nV/√Hz over the entire audio bandwidth of 20 Hz to 20 kHz.
The low noise, high bandwidth (190 MHz), and offset voltage of
(200 μV maximum) make the SSM2220 an ideal choice for demand
ing, low noise preamplifier applications.
The SSM2220 also offers excellent matching of the current gain
(ΔhFE) to about 0.5%, which helps to reduce the high order amplifier harmonic distortion. In addition, to ensure the long-term
stability of the matching parameters, internal protection diodes
Rev. C
across the base to emitter junction were used to clamp any reverse
base to emitter junction potential. This prevents a base to emitter
breakdown condition, which can result in degradation of gain and
matching performance due to excessive breakdown current.
Another feature of the SSM2220 is its very low bulk resistance
of 0.3 Ω typical, which assures accurate logarithmic conformance.
The SSM2220 is offered in 8-lead plastic dual inline (PDIP) and
8-lead standard small outline (SOIC), and its performance and
characteristics are guaranteed over the extended industrial temperature range of −40°C to +85°C.
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SSM2220
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Typical Performance Characteristics ..............................................5
Applications ....................................................................................... 1
Applications Information .................................................................8
Pin Connection Diagram ................................................................ 1
Super Low Noise Amplifier ..........................................................8
General Description ......................................................................... 1
Low Noise Microphone Preamplifier .........................................9
Specifications..................................................................................... 3
Noise Measurement ................................................................... 10
Electrical Characteristics ............................................................. 3
Current Sources .......................................................................... 10
Absolute Maximum Ratings............................................................ 4
Outline Dimensions ....................................................................... 12
Thermal Resistance ...................................................................... 4
Ordering Guide .......................................................................... 12
ESD Caution .................................................................................. 4
REVISION HISTORY
4/13—Rev. B to Rev. C
Updated Format .................................................................. Universal
Changes to Features Section and Figure 1..................................... 1
Change to Endnote 2 and Endnote 4, Table 1............................... 3
Changed Breakdown Voltage Parameter, Table 2
to Breakdown Voltage (Collector to Emitter), Table 2 ................ 3
Changes to Table 3 ............................................................................ 4
Changes to Figure 8 Caption, Figure 9 Caption,
and Figure 12 ..................................................................................... 6
Change to Figure 15 ......................................................................... 7
Changes to Super Low Noise Amplifier Section, Figure 16, and
Figure 17 Caption ............................................................................. 8
Change to Figure 18 ......................................................................... 9
Changes to Figure 19 and Noise Measurement Section ............ 10
Changes to Current Sources and Current
Matching Sections .......................................................................... 11
Updated Outline Dimensions ....................................................... 12
Changes to Ordering Guide .......................................................... 12
11/03—Rev. A to Rev. B
Changes to Ordering Guide .............................................................1
Updated Outline Dimensions ..........................................................9
Rev. C | Page 2 of 12
Data Sheet
SSM2220
SPECIFICATIONS
TA = 25°C, unless otherwise noted.
Table 1.
Parameter
CURRENT GAIN 1
Current Gain Matching 2
NOISE VOLTAGE DENSITY 3
OFFSET VOLTAGE 4
Offset Voltage Change vs. Collector Voltage
Offset Voltage Change vs. Collector Current
OFFSET CURRENT
COLLECTOR TO BASE LEAKAGE CURRENT
BULK RESISTANCE
COLLECTOR SATURATION VOLTAGE
1
2
Symbol
hFE
Min
Typ
Max
Unit
80
70
60
165
150
120
0.5
6
%
0.8
0.7
0.7
0.7
40
11
12
6
50
0.3
0.026
2
1
1
1
200
200
75
45
400
0.75
0.1
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
μV
μV
μV
nA
pA
Ω
V
ΔhFE
en
VOS
ΔVOS/ΔVCB
ΔVOS/ΔIC
IOS
ICBO
rBE
VCE(SAT)
Test Conditions/Comments
VCB = 0 V to 36 V
IC = 1 mA
IC = 100 μA
IC = 10 μA
IC = 100 μA, VCB = 0 V
IC = 1 mA, VCB = 0 V
fO = 10 Hz
fO = 100 Hz
fO = 1 kHz
fO = 10 kHz
VCB = 0 V, IC = 100 μA
IC = 100 μA, VCB1 = 0 V, VCB2 = −36 V
VCB = 0 V, IC1 = 10 μA, IC2 = 1 mA
IC = 100 μA, VCB = 0 V
VCB = −36 V = VMAX
VCB = 0 V, 10 μA ≤ IC ≤ 1 mA
IC = 1 mA, IB = 100 μA
Current gain is measured at collector to base voltages (VCB) swept from 0 V to VMAX at indicated collector current. Typicals are measured at VCB = 0 V.
Current gain matching (ΔhFE) is defined as follows:
ΔhFE = 100(∆I B )(h FE ) min
IC
Sample tested. Noise tested and specified as equivalent input voltage for each transistor.
Offset voltage is defined as follows:
VOS = VBE1 – VBE2 = KT ln I C1
q I C2
where VOS is the differential voltage for IC1 = IC2.
3
4
ELECTRICAL CHARACTERISTICS
−40°C ≤ TA ≤ +85°C, unless otherwise noted.
Table 2.
Parameter
CURRENT GAIN
OFFSET VOLTAGE
Offset Voltage Drift 1
OFFSET CURRENT
BREAKDOWN VOLTAGE (COLLECTOR TO EMITTER)
1
Symbol
hFE
VOS
TCVOS
IOS
BVCEO
Min
Typ
Max
Unit
60
50
40
125
105
90
30
0.3
10
265
1.0
200
μV
μV/°C
nA
V
36
Guaranteed by VOS test (TCVOS = VOS/T for VOS
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