SSM2220SZ-REEL

Audio Dual Matched PNP Transistor SSM2220 Data Sheet PIN CONNECTION DIAGRAM Low voltage noise at 100 Hz, 1 nV/√Hz maximum High gain bandwidth: 190 MHz typical Gain at IC = 1 mA, 165 typical Tight gain matching: 3% maximum Outstanding logarithmic conformance: rBE = 0.3 Ω typical Low offset voltage: 200 μV maximum APPLICATIONS SSM2220 TOP VIEW (Not to Scale) C1 1 8 C2 B1 2 7 B2 E1 3 6 E2 NC 4 5 NC NOTES 1. NC = NO CONNECT. THIS PIN IS NOT CONNECTED INTERNALLY. Microphone preamplifiers Tape head preamplifiers Current sources and mirrors Low noise precision instrumentation Voltage controlled amplifiers/multipliers 03096-001 FEATURES Figure 1. GENERAL DESCRIPTION The SSM2220 is a dual, low noise, matched PNP transistor, which has been optimized for use in audio applications. The ultralow input voltage noise of the SSM2220 is typically only 0.7 nV/√Hz over the entire audio bandwidth of 20 Hz to 20 kHz. The low noise, high bandwidth (190 MHz), and offset voltage of (200 μV maximum) make the SSM2220 an ideal choice for demand ing, low noise preamplifier applications. The SSM2220 also offers excellent matching of the current gain (ΔhFE) to about 0.5%, which helps to reduce the high order amplifier harmonic distortion. In addition, to ensure the long-term stability of the matching parameters, internal protection diodes Rev. C across the base to emitter junction were used to clamp any reverse base to emitter junction potential. This prevents a base to emitter breakdown condition, which can result in degradation of gain and matching performance due to excessive breakdown current. Another feature of the SSM2220 is its very low bulk resistance of 0.3 Ω typical, which assures accurate logarithmic conformance. The SSM2220 is offered in 8-lead plastic dual inline (PDIP) and 8-lead standard small outline (SOIC), and its performance and characteristics are guaranteed over the extended industrial temperature range of −40°C to +85°C. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2013 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com SSM2220 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Typical Performance Characteristics ..............................................5 Applications ....................................................................................... 1 Applications Information .................................................................8 Pin Connection Diagram ................................................................ 1 Super Low Noise Amplifier ..........................................................8 General Description ......................................................................... 1 Low Noise Microphone Preamplifier .........................................9 Specifications..................................................................................... 3 Noise Measurement ................................................................... 10 Electrical Characteristics ............................................................. 3 Current Sources .......................................................................... 10 Absolute Maximum Ratings............................................................ 4 Outline Dimensions ....................................................................... 12 Thermal Resistance ...................................................................... 4 Ordering Guide .......................................................................... 12 ESD Caution .................................................................................. 4 REVISION HISTORY 4/13—Rev. B to Rev. C Updated Format .................................................................. Universal Changes to Features Section and Figure 1..................................... 1 Change to Endnote 2 and Endnote 4, Table 1............................... 3 Changed Breakdown Voltage Parameter, Table 2 to Breakdown Voltage (Collector to Emitter), Table 2 ................ 3 Changes to Table 3 ............................................................................ 4 Changes to Figure 8 Caption, Figure 9 Caption, and Figure 12 ..................................................................................... 6 Change to Figure 15 ......................................................................... 7 Changes to Super Low Noise Amplifier Section, Figure 16, and Figure 17 Caption ............................................................................. 8 Change to Figure 18 ......................................................................... 9 Changes to Figure 19 and Noise Measurement Section ............ 10 Changes to Current Sources and Current Matching Sections .......................................................................... 11 Updated Outline Dimensions ....................................................... 12 Changes to Ordering Guide .......................................................... 12 11/03—Rev. A to Rev. B Changes to Ordering Guide .............................................................1 Updated Outline Dimensions ..........................................................9 Rev. C | Page 2 of 12 Data Sheet SSM2220 SPECIFICATIONS TA = 25°C, unless otherwise noted. Table 1. Parameter CURRENT GAIN 1 Current Gain Matching 2 NOISE VOLTAGE DENSITY 3 OFFSET VOLTAGE 4 Offset Voltage Change vs. Collector Voltage Offset Voltage Change vs. Collector Current OFFSET CURRENT COLLECTOR TO BASE LEAKAGE CURRENT BULK RESISTANCE COLLECTOR SATURATION VOLTAGE 1 2 Symbol hFE Min Typ Max Unit 80 70 60 165 150 120 0.5 6 % 0.8 0.7 0.7 0.7 40 11 12 6 50 0.3 0.026 2 1 1 1 200 200 75 45 400 0.75 0.1 nV/√Hz nV/√Hz nV/√Hz nV/√Hz μV μV μV nA pA Ω V ΔhFE en VOS ΔVOS/ΔVCB ΔVOS/ΔIC IOS ICBO rBE VCE(SAT) Test Conditions/Comments VCB = 0 V to 36 V IC = 1 mA IC = 100 μA IC = 10 μA IC = 100 μA, VCB = 0 V IC = 1 mA, VCB = 0 V fO = 10 Hz fO = 100 Hz fO = 1 kHz fO = 10 kHz VCB = 0 V, IC = 100 μA IC = 100 μA, VCB1 = 0 V, VCB2 = −36 V VCB = 0 V, IC1 = 10 μA, IC2 = 1 mA IC = 100 μA, VCB = 0 V VCB = −36 V = VMAX VCB = 0 V, 10 μA ≤ IC ≤ 1 mA IC = 1 mA, IB = 100 μA Current gain is measured at collector to base voltages (VCB) swept from 0 V to VMAX at indicated collector current. Typicals are measured at VCB = 0 V. Current gain matching (ΔhFE) is defined as follows: ΔhFE = 100(∆I B )(h FE ) min IC Sample tested. Noise tested and specified as equivalent input voltage for each transistor. Offset voltage is defined as follows: VOS = VBE1 – VBE2 = KT ln I C1  q  I C2  where VOS is the differential voltage for IC1 = IC2. 3 4 ELECTRICAL CHARACTERISTICS −40°C ≤ TA ≤ +85°C, unless otherwise noted. Table 2. Parameter CURRENT GAIN OFFSET VOLTAGE Offset Voltage Drift 1 OFFSET CURRENT BREAKDOWN VOLTAGE (COLLECTOR TO EMITTER) 1 Symbol hFE VOS TCVOS IOS BVCEO Min Typ Max Unit 60 50 40 125 105 90 30 0.3 10 265 1.0 200 μV μV/°C nA V 36 Guaranteed by VOS test (TCVOS = VOS/T for VOS