2N5031

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 1 4 2 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: The 2N5031 is a silicon NPN transistor, designed for general purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 15 3.0 20 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25º C Derate above 25º C 200 1.14 mWatts mW/ º C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5031 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 0.01 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.01mAdc, IC = 0) Collector Cutoff Current (VCE = 6.0 Vdc, IE = 0 Vdc) Value Min. 10 15 3.0 Typ. 1.0 Max. 10 Unit Vdc Vdc Vdc nA (on) HFE DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc) 25 300 - DYNAMIC Symbol fT CCB Test Conditions Current-Gain - Bandwidth Product (IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) Output Capacitance (IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz) Value Min. 1200 Typ. 2.5 Max. 2500 Unit MHz dB FUNCTIONAL Symbol Test Conditions Maximum Unilateral Gain (1) Maximum Available Gain IC = 1 mAdc, VCE = 6Vdc, f = 400 MHz IC = 1 mAdc, VCE = 6Vdc, f = 400 MHz Value Min. Typ. 12 12.4 Max. Unit dB dB G U max MAG Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5031 Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .610 .659 .671 .675 .677 .678 .677 .679 .678 .682 ∠φ -137 -161 -171 -178 176 172 168 184 160 156 S21 |S21| 23.8 13.2 9.0 6.8 5.5 4.6 4.0 3.5 3.1 2.8 ∠φ 116 98 89 83 77 72 68 64 60 56 S12 |S12| .026 .033 .040 .047 .055 .064 .073 .082 .092 .102 ∠φ 46 47 51 55 58 61 62 63 64 65 S22 |S22| .522 .351 .304 .292 .293 .299 .306 .314 .322 .311 ∠φ -78 -106 -120 -128 -132 -134 -135 -136 -138 -139 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5031 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.