APT4016BVFR

400V 27A 0.16Ω APT4016BVFR APT4016SVFR APT4016BVFRG* APT4016SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V ® V® FREDFET BVFR TO -2 47 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D3PAK SVFR • Faster Switching • Lower Leakage • Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • Avalanche Energy Rated • TO-247 or Surface Mount D3Pak G D S All Ratings: TC = 25°C unless otherwise specified. APT4016B_SVFR(G) UNIT Volts Amps 400 27 108 ±30 ±40 280 2.24 -55 to 150 300 27 30 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 400 27 0.16 250 1000 2 4 ±100 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 14A) Ohms µA 2-2006 050-5634 Rev A Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) APT Website - http://www.advancedpower.com nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT4016B_SVFR(G) Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 27A @ 25°C VGS = 15V VDD = 200V ID = 27A @ 25°C RG = 1.6Ω MIN TYP MAX UNIT pF 3350 510 200 135 24 60 11 10 48 6 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts V/ns ns 27 108 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C (Body Diode) (VGS = 0V, IS = -27A) 5 Peak Diode Recovery dv/dt Reverse Recovery Time (IS = -27A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -27A, di/dt = 100A/µs) Peak Recovery Current (IS = -27A, di/dt = 100A/µs) t rr Q rr IRRM 250 450 1.8 6.0 14 24 µC Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.45 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 3.32mH, R = 25Ω, Peak I = 27A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS ≤ -ID Cont. di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C [ ] 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 Z JC, THERMAL IMPEDANCE (°C/W) θ D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 050-5634 Rev A 2-2006 0.001 10-5 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 Typical Performance Curves 50 VGS=6V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) APT4016B_SVFR(G) 50 VGS=15V 5.5V 40 VGS=10V VGS=7V 30 5V 20 5.5V 6V 40 30 5V 20 10 4.5V 10 4.5V 4V 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 4V 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 2.0 V GS 0 0 50 ID, DRAIN CURRENT (AMPERES) TJ = -55°C TJ = +25°C TJ = +125°C NORMALIZED TO = 10V @ 0.5 I [Cont.] D 40 1.8 1.6 1.4 30 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @