APT6025BVFR

APT6025BVFR APT6025SVFR POWER MOS V ® FREDFET TO-247 600V 25A 0.250Ω D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • Lower Leakage • Faster Switching • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package G S D FREDFET MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT6025BVFR_SVFR UNIT Volts Amps 600 25 100 ±30 ±40 370 2.96 -55 to 150 300 25 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.250 250 1000 ±100 2 4 (VGS = 10V, 12.5A) Ohms µA nA Volts 050-5631 Rev A 1-2005 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT6025BFVR_SVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 1.6Ω MIN TYP MAX UNIT pF 4300 525 220 185 23 85 14 12 55 10 5160 735 330 275 35 125 28 28 80 20 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt MIN TYP MAX UNIT Amps Volts V/ns ns µC Amps 25 100 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C (Body Diode) (VGS = 0V, IS = -ID [Cont.]) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) 205 415 1.5 5.5 13 23 250 525 THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.34 40 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 4.16mH, R = 25Ω, Peak I = 25A temperature. j G L 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5 I ≤ I [Cont.], di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 200V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.4 Z JC, THERMAL IMPEDANCE (°C/W) θ D=0.5 0.1 0.05 0.2 0.1 0.05 PDM 050-5631 Rev A 1-2005 0.01 0.005 0.02 0.01 SINGLE PULSE Note: t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 0.001 10-5 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 Typical Performance Curves 60 ID, DRAIN CURRENT (AMPERES) APT6025BFVR_SVFR 60 6V ID, DRAIN CURRENT (AMPERES) VGS=7V, 10V & 15V VGS=7V, 10V & 15V 6V 50 40 30 20 10 0 5V 50 40 30 20 10 0 5V 5.5V 5.5V 4.5V 4V 4.5V 4V 0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.3 V GS 60 ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @