APT50M80B2VFR APT50M80LVFR
POWER MOS V ®
FREDFET
T-MaxTM
500V 58A 0.080Ω
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-264
• Identical Specifications: T-MAX™ or TO-264 Package • Lower Leakage • Fast Recovery Body Diode • Faster Switching • Avalanche Energy Rated
G S D
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT50M80B2VFR _ LVFR UNIT Volts Amps
500 58 232 ±30 ±40 625 5.0 -55 to 150 300 58 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.080 250 1000 ±100 2 4
(VGS = 10V, 29A)
Ohms µA nA Volts
12-2003 050-5912 Rev B
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50M80B2VFR_LVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 58A @ 25°C VGS = 15V VDD = 250V ID = 58A @ 25°C RG = 0.6Ω MIN TYP MAX UNIT pF
8797 1286 562 423 41 214 14 25 64 23
ns nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns
58 232 1.3 5
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
(Body Diode) (VGS = 0V, IS = -58A)
5
d v/
t rr Q rr IRRM
Reverse Recovery Time (IS = -58A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -58A, di/dt = 100A/µs) Peak Recovery Current (IS = -58A, di/dt = 100A/µs)
270 540 2.7 5.9 16 22.5
µC
Amps
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.20 40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.78mH, R = 25Ω, Peak I = 58A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS ≤ -58A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.20 0.9 0.15
0.7 0.5
12-2003
0.10
Note:
PDM t1 t2
0.3 0.05 0.1 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2
050-5912 Rev B
Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
0
10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
160
ID, DRAIN CURRENT (AMPERES)
Junction temp. (°C) RC MODEL
APT50M80B2VFR_LVFR
15 &10V 7V 140 120 100 80 60 5V 40 4.5V 20 4V 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0.0302
0.00809F
6V
Power (watts)
5.5V
0.0729
0.0182F
0.0955 Case temperature. (°C)
0.264F
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 90
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @
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