APT60M80L2VFR

APT60M80L2VFR 600V 65A 0.080Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. L2VFR TO-264 Max • TO-264 MAX Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • Avalanche Energy Rated • FAST RECOVERY BODY DIODE G D S All Ratings: TC = 25°C unless otherwise specified. APT60M80L2VFR UNIT Volts Amps 600 65 260 ±30 ±40 833 6.67 -55 to 150 300 65 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.080 250 1000 (VGS = 10V, ID = 32.5A) Ohms µA 050-7266 Rev A 6-2004 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) ±100 2 4 nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT60M80L2VFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 65A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 65A @ 25°C 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 65A, RG = 5Ω ID = 65A, RG = 5Ω RG = 0.6Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 13300 1610 700 590 50 310 14 24 70 31 1880 2830 3100 3345 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 65 280 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -65A) 5 d v/ t rr Q rr IRRM Reverse Recovery Time (IS = -65A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -65A, di/dt = 100A/µs) Peak Recovery Current (IS = -65A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 300 600 2.3 7 16 32 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.15 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.16 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 1.51mH, RG = 25Ω, Peak IL = 65A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID65A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.14 0.12 0.9 0.7 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5 Note: PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 050-7266 Rev A 6-2004 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 180 160 ID, DRAIN CURRENT (AMPERES) APT60M80L2VFR 6.5V 15 &10V 6V 140 120 100 80 60 40 20 0 RC MODEL Junction temp. (°C) 0.0456 Power (watts) 0.104 Case temperature. (°C) 0.493F 0.0272F 5.5V 5V 4.5V 4V RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 200 180 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @