APTM120H29F

APTM120H29F Full - Bridge MOSFET Power Module VB US Q1 Q3 VDSS = 1200V RDSon = 290mΩ max @ Tj = 25°C ID = 34A @ Tc = 25°C Applicatio n • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control G1 OUT1 OUT2 G3 S1 Q2 S3 Q4 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G2 G4 S2 0/VBUS S4 • • OUT1 G1 S1 VBUS 0/VBUS G2 S2 • Benefits • • • • S3 G3 OUT2 S4 G4 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120H29F– Rev 0 Max ratings 1200 34 25 136 ±30 290 780 22 50 3000 Unit V A V mΩ W A mJ July, 2004 APTM120H29F All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 500µA Min 1200 VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ Max 200 1000 290 5 ±150 Unit V µA mΩ V nA VGS = 10V, ID = 17A VGS = VDS, ID = 5 mA VGS = ±30 V, VDS = 0 V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 34A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 34A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Ω Min Typ 10.3 1.54 0.26 374 48 240 20 15 160 45 1980 1371 3131 1714 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0 V, IS = - 34A IS = - 34A VR = 600V diS/dt = 200A/µs IS = - 34A VR = 600V diS/dt = 200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 4 14 Max 34 25 1.3 18 320 650 Unit A V V/ns ns µC July, 2004 2–6 APTM120H29F– Rev 0 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 34A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com APTM120H29F Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 80 60 40 20 0 0 5 10 15 20 7V 6.5V 120 100 80 60 40 20 0 TJ=25°C TJ=125°C 0 1 2 3 4 5 6 TJ=-55°C 7 8 9 6V 5.5V 5V 25 30 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS=10V @ 17A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 30 20 10 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 20 40 60 80 25 50 75 100 125 150 ID, Drain Current (A) TC, Case Temperature (°C) July, 2004 APT website – http://www.advancedpower.com 4–6 APTM120H29F– Rev 0 APTM120H29F RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 12 10 8 6 4 2 0 0 80 160 240 320 400 480 Gate Charge (nC) I D=34A TJ=25°C V DS=240V VDS=600V V DS =960V ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=17A 1000 100µs 100 limited by RDS on 1ms 10 Single pulse TJ =150°C 1 1 10ms 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage APT website – http://www.advancedpower.com 5–6 APTM120H29F– Rev 0 July, 2004 APTM120H29F Delay Times vs Current 180 td(on) and td(off) (ns) 150 60 V DS=800V RG =2.5Ω T J=125°C L=100µH Rise and Fall times vs Current 80 V DS =800V RG =2.5Ω T J=125°C L=100µH t d(off) tf 90 60 30 0 10 tr and tf (ns) 120 40 tr 20 td(on) 0 20 30 40 50 60 70 10 20 I D, Drain Current (A) Switching Energy vs Current 30 40 50 ID, Drain Current (A) 60 70 Switching Energy vs Gate Resistance 7 VDS=800V ID=34A TJ=125°C L=100µH 6 Switching Energy (mJ) 5 4 3 2 1 0 10 Switching Energy (mJ) VDS=800V RG=2.5Ω TJ=125°C L=100µH Eon 6 5 4 3 2 1 Eoff Eoff Eon 20 30 40 50 60 I D, Drain Current (A) 70 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage Operating Frequency vs Drain Current 200 175 ZCS IDR, Reverse Drain Current (A) 225 1000 Frequency (kHz) 150 125 100 75 50 25 0 8 12 16 20 24 28 ID, Drain Current (A) 32 VDS=800V D=50% RG=2.5Ω T J=125°C T C=75°C ZVS 100 TJ=150°C TJ=25°C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM120H29F– Rev 0 July, 2004