APTM120A20D

APTM120A20D Phase leg with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 200mΩ max @ Tj = 25°C ID = 50A @ Tc = 25°C Applicatio n • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration • • • G1 S1 VBUS 0/VBUS OUT Benefits • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120U20D Rev 0 July, 2004 Tc = 25°C Max ratings 1200 50 37 200 ±30 200 1250 12 30 1300 Unit V A V mΩ W A APTM120A20D All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 1.5mA Min 1200 VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ Max 1.5 6 200 5 ±450 Unit V mA mΩ V nA VGS = 10V, ID = 25A VGS = VDS, ID = 6 mA VGS = ±30 V, VDS = 0 V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 50A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 50A R G =0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8 Ω Min Typ 15.2 2.2 0.42 600 84 390 10 10 68 36 2.79 0.6 5.6 0.81 Max Unit nF nC ns mJ mJ Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 2400A IF = 120A IF = 120A VR = 800V di/dt = 400A/µs IF = 120A VR = 800V di/dt = 400A/µs T c = 70°C Min 1200 Typ 120 2 2.3 1.8 400 470 2.4 8 Max Unit V A V July, 2004 2–6 APTM120U20D Rev 0 2.5 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns µC APT website – http://www.advancedpower.com APTM120A20D Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Series diode 2500 -40 -40 -40 3 2 Min Typ Max 0.1 0.46 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 120 90 6V 60 5.5V 30 5V 0 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS =10V @ 25A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 60 50 40 30 20 10 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 30 60 90 120 25 50 75 100 125 150 ID, Drain Current (A) TC, Case Temperature (°C) July, 2004 APT website – http://www.advancedpower.com 4–6 APTM120U20D Rev 0 APTM120A20D RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 14 12 10 8 6 4 2 0 0 120 240 360 480 600 720 840 Gate Charge (nC) I D=50A TJ=25°C V DS =240V VDS=600V VDS=960V ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=25A 1000 limited by RDS on 100 100µs 1ms 10 Single pulse TJ =150°C 1 1 1200 10 100 1000 VDS, Drain to Source Voltage (V) 10ms Gate Charge vs Gate to Source Voltage 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–6 APTM120U20D Rev 0 July, 2004 APTM120A20D Delay Times vs Current 80 td(on) and td(off) (ns) t d(off) 50 tf Rise and Fall times vs Current 60 V DS =800V RG =0.8Ω T J=125°C L=100µH tr and tf (ns) 40 25 V DS =800V RG =0.8Ω T J=125°C L=100µH tr 20 t d(on) 0 10 30 50 70 90 110 10 30 I D, Drain Current (A) Switching Energy vs Current 50 70 90 I D, Drain Current (A) 110 0 Switching Energy vs Gate Resistance 9 12 Switching Energy (mJ) 9 6 3 0 10 Switching Energy (mJ) VDS=800V RG=0.8Ω TJ=125°C L=100µH E on Eon 6 VDS=800V ID=50A T J=125°C L=100µH Eoff 3 Eoff 0 30 50 70 90 110 0 1 2 3 4 5 6 ID, Drain Current (A) Operating Frequency vs Drain Current 200 175 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 TJ=150°C 100 TJ=25°C Frequency (kHz) 150 125 100 75 50 25 0 10 20 30 40 ID, Drain Current (A) 50 VDS=800V D=50% RG=0.8Ω T J=125°C T C=75°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM120U20D Rev 0 July, 2004