APTM120U10SA

APTM120U10SA Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for MOSFET improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile S Q1 G S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120U10SA Rev 0 Max ratings 1200 116 86 464 ±30 120 3290 24 50 3200 Unit V A V mΩ W A mJ September, 2005 APTM120U10SA All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ VGS = 10V, ID = 58A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0 V Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 116A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 116A R G =1.2Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 116A, R G = 1.2 Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 116A, R G = 1.2 Ω 100 3 Max 1 4 120 5 ±400 Max Unit mA mΩ V nA Unit nF Dynamic Characteristics Min Typ 28.9 4.4 0.8 1100 128 716 20 17 245 62 5 4.6 9.2 5.6 nC ns mJ mJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Test Conditions VR=200V 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs Min 200 Tj = 25°C Tj = 125°C T c = 80°C Typ Max 350 600 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 120 1.1 1.4 0.9 31 60 120 500 1.15 V September, 2005 2–6 APTM120U10SA Rev 0 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC IF = 120A VR = 133V di/dt = 400A/µs APT website – http://www.advancedpower.com APTM120U10SA Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Test Conditions VR=1200V 50% duty cycle IF = 180A IF = 360A IF = 180A IF = 180A VR = 800V di/dt = 600A/µs IF = 180A VR = 800V di/dt = 600A/µs Tj = 25°C Tj = 125°C T c = 80°C Min 1200 Typ Max 200 750 Unit V µA A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 180 2.5 3 1.8 265 350 1.7 8.7 3 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode Parallel diode Min Typ Max 0.038 0.46 0.32 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 5V RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 40 80 120 160 200 240 25 50 75 100 125 150 September, 2005 4–6 APTM120U10SA Rev 0 ID, Drain Current (A) TC, Case Temperature (°C) APT website – http://www.advancedpower.com APTM120U10SA RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0 300 600 900 1200 1500 September, 2005 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS =10V ID=58A 1000 limited by RDS on 100µs 100 1ms 10ms 10 Single pulse TJ =150°C 1 1 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=116A TJ=25°C VDS=600V V DS=960V V DS=240V Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) APT website – http://www.advancedpower.com 5–6 APTM120U10SA Rev 0 APTM120U10SA Delay Times vs Current 300 td(on) and td(off) (ns) 250 200 150 100 50 0 30 60 90 120 150 180 I D, Drain Current (A) Switching Energy vs Current 16 24 V DS =800V RG =1.2Ω T J=125°C L=100µH V DS=800V RG=1.2Ω T J=125°C L=100µH Rise and Fall times vs Current 100 t d(off) 80 VDS=800V RG=1.2Ω TJ=125°C L=100µH tf tr and tf (ns) 60 40 20 0 30 60 90 120 150 I D, Drain Current (A) 180 tr td(on) Switching Energy vs Gate Resistance V DS=800V ID=116A T J=125°C L=100µH Switching Energy (mJ) Switching Energy (mJ) 12 8 4 0 30 Eon Eoff 20 16 12 8 4 Eoff Eon 60 90 120 150 ID, Drain Current (A) 180 0 2 4 6 8 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage O perating Frequency vs Drain Current 150 Frequency (kHz) 125 100 75 50 25 0 30 ZVS Hard switching V DS=800V D=50% R G=1.2Ω T J=125°C T C=75°C ZCS IDR, Reverse Drain Current (A) 175 1000 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 September, 2005 50 70 90 ID, Drain Current (A) 110 VSD, Source to Drain Voltage (V) APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM120U10SA Rev 0 APT reserves the right to change, without notice, the specifications and information contained herein