AWT6167

AWT6167 GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control FEATURES • • • • • • • Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 dBm High Efficiency (PAE) at Pmax: -GSM900, 56 % -DCS, 53 % +35 dBm GSM900 Output Power at 3.5 V +33 dBm DCS Output Power at 3.5 V 55 dB dynamic range GPRS Class 12 Capable ADVANCED PRODUCT INFORMATION - Rev 0.1 AWT6167 APPLICATIONS • Dual Band Handsets & PDAs 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module PRODUCT DESCRIPTION As with previous generations, the AWT6167 integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6167 input and output terminals are internal matched to 50 ohms and DC blocked, reducing the VCC2 number of external components required in the final application. Both PA die, GSM900 and DCS, are fabricated using state of the art InGaP HBT technology, known for it is proven reliability and temperature stability. DCSIN BS TX EN MATCH MATCH DCSOUT CMOS BIAS/Integrated Power Control VBATT VREG VRAMP GSM900IN VCC_OUT H(s) MATCH MATCH GSM900OUT VCC2 Figure 1: Block Diagram 01/2005 AWT6167 VCC2 GND DCS_IN BS TX_EN VBATT CEXT VRAMP GSM_IN 1 2 3 4 5 6 7 18 17 16 15 14 13 12 11 DCS_OUT GND GND VCC_OUT GND GND GSM_OUT 8 9 10 Figure 2: Pinout (X- ray Top View) Table 1: Pin Description PIN 1 2 3 4 5 6 7 8 NAME DCS_IN BS TX_EN VBATT C EXT VRAMP GSM_IN VC C 2 DESCRIPTION DCS RF Input Band Select Logic Input TX Enable Logic Input Battery Supply Connection Bypass Analog Signal used to control the output power GSM900 RF Input VCC Control Input for GSM900 Pre-amplifier Ground VCC 2 PIN 10 11 12 13 14 15 16 17 GND NAME GSM_OUT GND GND VCC_OUT GND GND DCS_OUT GND DESCRIPTION GSM900 RF Output Ground Ground Control Voltage Output which must be connected to VCC2 Ground Ground DCS RF Output Ground VCC Control Input for DCS Pre-amplifier 9 GND 18 VC C 2 2 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6167 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER Supply Voltage (VBATT) RF Input Power (RFIN) Control Voltages (VRAMP) Storage Temperature (TSTG) MIN -0.3 - 55 MAX +7 11 1.8 150 UNIT V dB m V °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: ESD Ratings PARAMETER ESD Threshold voltage (RF ports) ESD Threshold voltage (control inputs) METHOD HBM HBM RATING >2.5 >2.5 UNIT kV kV Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Human body model HBM employed is resistance = 1500 Ω , capacitance = 100 pF. Table 4: Digital Inputs PARAMETER Logic High Voltage (VIH) Logic Low Voltage (VIL) Logic High Current (IIH) Logic Low Current (IIL) MIN 1.2 TYP MAX 3.0 0.5 30 30 UNIT V V µA µA Table 5: Control Logic Table MODE PA Enable GSM900 Mode DCS Mode PA Disable T x_E N HIGH HIGH HIGH LOW BS X LOW HIGH X ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 3 AWT6167 Table 6: Operating Ranges PARAMETER Case Temperature (TC) Supply Voltage (VBATT) MIN -20 3.0 TYP 3.5 MAX 85 4.8 UNIT °C V COMMENTS Power Supply Leakage Current - 1 10 µA VBATT = 4.8 V, VRAMP = 0 V, TX_EN = LOW, No RF applied Control Voltage Range Turn on time (TON) 0.2 - - 1.6 1 V µs VRAMP = 0.2 V, TX_EN = LOW → High PIN = 5 dBm VRAMP = 0.2 V, TX_EN = HIGH → LOW PIN = 5 dBm POUT = -10 dBm →PMAX (within 0.2 dB) POUT = PMAX→ -10 dBm (within 0.2 dB) Turn off time (TOFF) - - 1 µs Rise Time (TRISE) Fall Time (TFALL) VRAMP Input Capacitance VRAMP Input Current Duty Cycle - 3 - 1 1 10 50 µs µs pF µA % The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 4 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6167 Table 7: Electrical Characteristics for GSM900 (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH) PARAMETER Operating Frequency (Fo) Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation (2Fo @ DCS Port) Harmonics 2fo n*Fo, (n > 3), Fo [ 12.75 GHz MIN 880 0 34.5 32.5 TYP 3.0 35.0 33.5 56 -35 -25 -30 -25 -30 MAX 915 5 UNIT MHz dB m dB m dB m % dB m dB m dB m Freq = 880 to 915 MHz VBATT = 3.0 V, TC = 85 OC, PIN = 0 dBm Freq = 880 to 915 MHz TX_EN = LOW, PIN = 5 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm VRAMP = 0.2 V to VRAMP_MAX COMMENTS dB m Over all output power levels VSWR = 8:1 All Phases, POUT [ 34.5 dBm Stability Ruggedness -36 -30 10:1 dB m dB m VSWR FOUT < 1 GHz FOUT > 1 GHz All load phases, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT [ 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT [ 34.5 dBm Over all output power levels RX Noise Power - -84 - dB m -87 - dB m Input VSWR - 1.5:1 - - ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 5 AWT6167 Table 8: Electrical Characteristics for DCS (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH) PARAMETER Operating Frequency (Fo) Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Harmonics 2fo n*Fo, (n > 3), Fo [ 12.75 GHz MIN 1710 0 32 30 - TYP 3.0 33 31 53 -40 -18 -20 -30 MAX 1785 5 - UNIT MHz dB m dB m dB m % dB m dB m COMMENTS VBATT = 3.0 V, TC = 85 OC, PIN = 0 dBm Freq = 1710 to 1785 MHz TX_EN = LOW, VRAMP = 0.2 V PIN = 5 dBm, TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Over all output power levels dB m VSWR = 8:1 All Phases, POUT [ 32 dBm Stability Ruggedness -36 -30 10:1 dB m dB m VSWR FOUT < 1 GHz FOUT > 1 GHz All load phases, POUT < 32 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX = 1805 to 1880 MHz, POUT [ 32 dBm Over all output power levels RX Noise Power - -86 - dB m Input VSWR - 1.5:1 - - 6 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6167 APPLICATION INFORMATION 18 17 VCC2 DCS/PCS RF INPUT GND 1 2 DCS/PCS_PIN BS TX_EN VBAT T CEXT VRAMP DCS/PCS_OUT GND 16 15 14 13 1nF ** 12 11 10 DCS/PCS RF OUTPUT BAND SELECT TX ENABLE BATTERY VOLTAGE 1nF ++ 1nF ++ 47uF ++ 22nF ** 3 4 2.7pF ** 5 6 AWT6167 GND VCC_OUT GND GND DAC OUTPUT 10K* 27pF* 7 8 9 * Filtering may be required to filter noise from baseband. ** This component should be placed as close to the device pin as possible. ++ These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application. Figure 3: Application Schematic GND GSM850/900 RF INPUT VCC2 GSM_IN GSM_OUT GSM850/900 RF OUTPUT ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 7 AWT6167 PACKAGE OUTLINE Figure 4: Package Outline Figure 5: Branding Specification 8 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6167 NOTES ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 9 AWT6167 NOTES 10 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6167 NOTES ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 11 AWT6167 ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005