AWT6167R

AWT6167R GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control FEATURES • • • Integrated Vreg (regulated supply) Harmonic Performance ≤ -20 dBm High Efficiency (PAE) at Pmax: -GSM900, 55% -DCS, 53% +35 dBm GSM900 Output Power at 3.5 V +33 dBm DCS Output Power at 3.5 V 55 dB Dynamic Range GPRS Class 12 Capable RoHS Compliant Package, 250°C MSL-3 PRELIMINARY DATA SHEET - Rev 1.0 • • • • • AWT6167 R APPLICATIONS • Dual/Tri/Quad Band Handsets & PDAs M15 Package 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module PRODUCT DESCRIPTION As with previous generations, the AWT6167R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6167R input and output terminals are internal matched to 50 ohms and DC blocked, VCC2 reducing the number of external components required in the final application. Both PA die, GSM900 and DCS, are fabricated using state of the art InGaP HBT technology, known for it is proven reliability and temperature stability. DCS_IN BS TX_EN VBATT CEXT VRAMP GSM900_IN MATCH MATCH DCS_OUT CMOS BIAS/Integrated Power Control VCC_OUT H(s) MATCH MATCH GSM900_OUT VCC2 Figure 1: Block Diagram 06/2005 AWT6167R VCC2 GND DCS_IN BS TX_EN VBATT CEXT VRAMP GSM_IN 1 2 3 4 5 6 7 18 17 16 15 14 13 12 11 DCS_OUT GND GND VCC_OUT GND GND GSM_OUT 8 9 10 Figure 2: Pinout (X- ray Top View) Table 1: Pin Description PIN 1 2 3 4 5 6 7 8 9 NAME DCS_IN BS TX_EN VBATT C EXT VRAMP GSM_IN VCC2 GND DESCRIPTION DCS RF Input Band Select Logic Input TX Enable Logic Input Battery Supply Connection Bypass Analog Signal used to control the output power GSM900 RF Input VCC Control Input for GSM900 Pre-amplifier Ground VCC 2 PIN 10 11 12 13 14 15 16 17 18 GND NAME GSM_OUT GND GND VCC_OUT GND GND DCS_OUT GND VCC2 DESCRIPTION GSM900 RF Output Ground Ground Control Voltage Output which must be connected to VCC2 Ground Ground DCS RF Output Ground VCC Control Input for DCS Pre-amplifier 2 PRELIMINARY DATA SHEET - Rev 1.0 06/2005 AWT6167R ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER Supply Voltage (VBATT) RF Input Power (RFIN) Control Voltages (VRAMP) Storage Temperature (TSTG) MIN -0.3 - 55 MAX +7 11 1.8 150 UNIT V dB m V °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: ESD Ratings PARAMETER ESD Threshold voltage (RF ports) ESD Threshold voltage (control inputs) METHOD HBM HBM RATING >2.5 >2.5 UNIT kV kV Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Human body model HBM employed is resistance = 1500 Ω , capacitance = 100 pF. Table 4: Digital Inputs PARAMETER Logic High Voltage (VIH) Logic Low Voltage (VIL) Logic High Current (IIH) Logic Low Current (IIL) MIN 1.2 TYP MAX 3.0 0.5 30 30 UNIT V V µA µA Table 5: Control Logic Table MODE PA Enable GSM900 Mode DCS Mode PA Disable T x_E N HIGH HIGH HIGH LOW BS X LOW HIGH X PRELIMINARY DATA SHEET - Rev 1.0 06/2005 3 AWT6167R Table 6: Operating Ranges PARAMETER Case Temperature (TC) Supply Voltage (VBATT) MIN -20 3.0 TYP 3.5 MAX 85 4.8 UNIT °C V VBATT = 4.8 V, VRAMP = 0 V, TX_EN = LOW, No RF applied COMMENTS Power Supply Leakage Current - 1 10 µA Control Voltage Range 0.2 - 1.6 V µs VRAMP = 0.2 V, TX_EN = LOW → High PIN = 5 dBm VRAMP = 0.2 V, TX_EN = HIGH → LOW PIN = 5 dBm POUT = -10 dBm →PMAX (within 0.2 dB) POUT = PMAX→ -10 dBm (within 0.2 dB) Turn on time (TON) - - 1 Turn off time (TOFF) - - 1 µs Rise Time (TRISE) Fall Time (TFALL) VRAMP Input Capacitance VRAMP Input Current Duty Cycle - 3 - 1 1 10 50 µs µs pF µA % The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 4 PRELIMINARY DATA SHEET - Rev 1.0 06/2005 AWT6167R Table 7: Electrical Characteristics for GSM900 Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH) PARAMETER Operating Frequency (FO) Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation (Coupling of GSM 2fo and 3fo to DCS/PCS port) Harmonics 2fo, 3fo n*FO, (n ≥ 4), FO ≤ 12.75 GHz MIN 880 0 34.5 32.5 50 TYP 3.0 35.0 33.5 55 -38 -25 MAX 915 5 -33 -20 UNIT MHz dB m dB m dB m % dB m dB m Freq = 880 to 915 MHz VBATT = 3.0 V, TC = 85 °C, PIN = 0 dBm Freq = 880 to 915MHz TX_EN = LOW, VRAMP = 0.2 V PIN = 5 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm POUT ≤ 34.5 dBm COMMENTS - -23 -17 dB m - -22 -30 -10 -10 dB m POUT ≤ 34.5 dBm VSWR = 8:1 All Phases, POUT ≤ 34.5 dBm Stability Ruggedness -36 -30 10:1 dB m dB m VSWR FOUT < 1 GHz FOUT > 1 GHz All load phases, POUT ≤ 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT ≤ 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960MHz, POUT ≤ 34.5 dBm POUT ≤ 34.5 dBm RX Noise Power - -84 -77 dB m -87 -83 dB m Input VSWR - 1.5:1 2.5:1 - PRELIMINARY DATA SHEET - Rev 1.0 06/2005 5 AWT6167R Table 8: Electrical Characteristics for DCS Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH) PARAMETER Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Harmonics 2FO, 3FO n*FO, (n ≥ 4), FO ≤ 12.75 GHz MIN 1710 0 32 30 45 TYP 3.0 33 31 53 -40 -22 MAX 1785 5 -35 -17 UNIT MHz dB m dB m dB m % dB m dB m VBATT = 3.0 V, TC = 85 °C, PIN = 0 dBm Freq = 1710 to 1785 MHz TX_EN = LOW, VRAMP = 0.2 V PIN = 5 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm POUT ≤ 32 dBm COMMENTS - -22 -20 -10 -8 dB m VSWR = 8:1 All Phases, POUT ≤ 32 dBm Stability Ruggedness -36 -30 10:1 dB m dB m VSWR FOUT < 1 GHz FOUT > 1 GHz All load phases, POUT ≤ 32 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX = 1805 to 1880 MHz, POUT ≤ 32 dBm POUT ≤ 32 dBm RX Noise Power - -86 -80 dB m Input VSWR - 1.5:1 2.5:1 6 PRELIMINARY DATA SHEET - Rev 1.0 06/2005 AWT6167R APPLICATION INFORMATION DCS RF INPUT DCS RF OUTPUT AWT6167R GSM900 RF OUTPUT GSM900 RF INPUT Figure 3: Application Schematic PRELIMINARY DATA SHEET - Rev 1.0 06/2005 7 AWT6167R PACKAGE OUTLINE Figure 4: M15 Package Outline - 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module AWT6167R AWT6167R Figure 5: Branding Specification 8 PRELIMINARY DATA SHEET - Rev 1.0 06/2005 AWT6167R NOTES PRELIMINARY DATA SHEET - Rev 1.0 06/2005 9 AWT6167R NOTES 10 PRELIMINARY DATA SHEET - Rev 1.0 06/2005 AWT6167R NOTES PRELIMINARY DATA SHEET - Rev 1.0 06/2005 11 AWT6167R ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE -20 oC to +85 oC PACKAGE DESCRIPTION RoHS Compliant 18 P i n 6 mm x 6 mm x 1.3 mm COMPONENT PACKAGING AWT6167RM15P8 Tape and Reel, 2500 pieces per reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 PRELIMINARY DATA SHEET - Rev 1.0 06/2005