APM9988CO

APM9988CO Dual N-Channel Enhancement Mode MOSFET Features • • • • 20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V RDS(ON)=19mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Pin Description Top View of TSSOP − 8 Applications • Power Management, Portable Equipment and Battery Powered Systems (4) G1 (1) D (8) D (5) G2 S1 (2) S1 (3) S2 S2 (6) (7) N-Channel MOSFET Ordering and Marking Information APM9988C Lead Free Code Handling Code Temp. Range Package Code Package Code O : TSSOP-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM9988C O : APM9988C XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 1 www.anpec.com.tw APM9988CO Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* I S* TJ TSTG PD* RθJA* Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 (TA = 25°C unless otherwise noted) Rating 20 ±8 6 VGS=4.5V 20 1.4 150 -55 to 150 TA=25°C TA=100°C 1.25 0.5 100 W °C/W V A A °C Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Qg Qgs Qgd a a (TA = 25°C unless otherwise noted) APM9988CO Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V, IDS=250µA VDS=16V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±8V, VDS=0V VGS=4.5V, IDS=6A VGS=2.5V, IDS=5.2A ISD=0.5A, VGS=0V 20 1 30 0.5 0.7 16 19 0.7 1 ±10 20 25 1.3 V µA V µA mΩ V Gate Charge Characteristics b Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=6A 16.5 4.5 4.5 21 nC Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 2 www.anpec.com.tw APM9988CO Electrical Characteristics (Cont.) S ymbol Parameter (T A = 25°C unless otherwise noted) APM9988CO Min. T yp. M ax. Test Condition Unit Dynamic Characteristics b RG C iss C oss C rss td(ON) Tr td(OFF) Tf trr Q rr N otes: Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge VGS=0V,V DS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω , IDS=1A, V GEN=4.5V, R G=6Ω 2 1155 200 90 7 10 47 24 14 19 86 45 Ω pF ns ISD =6A, dISD/dt=100A/µs 25 9 ns nC a : Pulse test ; pulse width ≤ 300 µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 3 www.anpec.com.tw APM9988CO Typical Characteristics Power Dissipation 1.5 8 Drain Current 1.2 0.9 ID - Drain Current (A) 6 Ptot - Power (W) 4 0.6 2 0.3 o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=4.5V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Normalized Transient Thermal Resistance 100 Thermal Transient Impedance 2 1 Duty = 0.5 0.2 ID - Drain Current (A) Rd s(o n) Lim it 10 300µs 1ms 10ms 0.1 0.05 0.02 0.01 0.1 1 100ms 0.01 Single Pulse Mounted on 1in pad o RθJA : 100 C/W 2 0.1 1s DC o T =25 C 0.01 A 0.01 0.1 1 10 100 1E-3 1E-4 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 4 www.anpec.com.tw APM9988CO Typical Characteristics (Cont.) Output Characteristics 20 18 16 VGS= 2, 3, 4, 5, 6, 7, 8, 9, 10V 24 22 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 14 12 10 1.5V 8 6 4 2 0 0.0 20 18 VGS=4.5V 16 14 12 10 VGS=2.5V 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 18 20 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 20 18 16 Gate Threshold Voltage 1.6 IDS =250µA 1.4 1.2 1.0 0.8 0.6 0.4 ID - Drain Current (A) 14 12 10 8 6 4 2 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 Tj=125 C Tj=25 C o o Tj=-55 C o Normalized Threshold Voltage 0.2 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 5 www.anpec.com.tw APM9988CO Typical Characteristics (Cont.) Drain-Source On Resistance 1.6 VGS= 4.5V ID = 6A Source-Drain Diode Forward 20 10 Normalized On Resistance 1.4 IS - Source Current (A) Tj=150 C Tj=25 C 1 o o 1.2 1.0 0.8 RON@Tj=25 C: 16mΩ 0 25 50 75 100 125 150 o 0.6 -50 -25 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance 2000 Frequency=1MHz 1750 Gate Charge 5 VDS=10V IDS= 6A VGS - Gate - source Voltage (V) 4 1500 C - Capacitance (pF) 1250 1000 750 500 Coss 250 Crss Ciss 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 0 0 2 4 6 8 10 12 14 16 18 20 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 6 www.anpec.com.tw APM9988CO Packaging Information TSSOP-8 e 87 2x E/2 E1 E S ( 2) GAUGE PLANE 12 e/2 D A2 A b A1 0.25 L (L1) ( 3) 1 Dim A A1 A2 b D e E E1 L L1 R R1 S φ1 φ2 φ3 Millimeters Min. 0.00 0.80 0.19 2.9 0.65 BSC 6.40 BSC 4.30 0.45 1.0 REF 0.09 0.09 0.2 0° 12 ° R EF 12 ° R EF 0.004 0.004 0.008 0° 4.50 0.75 0.169 0.018 Max. 1.2 0.15 1.05 0.30 3.1 Min. 0.000 0.031 0.007 0.114 Inches Max. 0.047 0.006 0.041 0.012 0.122 0.026 BSC 0.252 BSC 0.177 0.030 0.039REF 8° 8° 12 ° R EF 12 ° R EF Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 7 www.anpec.com.tw APM9988CO Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 2 5 °C to Peak Time Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to TP) Preheat 100°C 150°C - Temperature Min (Tsmin) 150°C 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (T L) 60-150 seconds 60-150 seconds - Time (tL) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 8 www.anpec.com.tw APM9988CO Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s 3 3 P ackage Thickness Volume mm Volume mm < 350 ≥ 350 < 2.5 mm 240 +0/-5 ° C 225 +0/-5 ° C ≥ 2.5 mm 225 +0/-5 ° C 225 +0/-5 ° C T able 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 P ackage Thickness Volume mm Volume mm Volume mm < 350 3 50-2000 > 2000 < 1.6 mm 260 +0 ° C* 260 +0 ° C* 260 +0 ° C* 1 .6 mm – 2.5 mm 260 +0 ° C* 250 +0 ° C* 245 +0 ° C* ≥ 2.5 mm 250 +0 ° C* 245 +0 ° C* 245 +0 ° C* * Tolerance: The device manufacturer/supplier s hall a ssure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 ° C. For example 260 ° C+0 ° C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 9 www.anpec.com.tw APM9988CO Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330 ± 1 B 62 +1.5 D 1.5 + 0.1 C 12.75+ 0.15 D1 1.5 + 0.1 J 2 + 0.5 Po 4.0 ± 0.1 T1 12.4 ± 0.2 P1 2.0 ± 0.1 T2 2 ± 0.2 Ao 7.0 ± 0.1 W 12± 0. 3 Bo 3.6 ± 0.3 P 8± 0.1 Ko E 1.75±0.1 t TSSOP-8 F 5.5 ± 0. 1 1.6 ± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application T SSOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright © ANPEC Electronics Corp. Rev. B.1 - Sep., 2005 10 www.anpec.com.tw