AO4476AL

AO4476A 30V N-Channel MOSFET General Description Product Summary The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS 30V 15A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7.7mΩ RDS(ON) (at VGS = 4.5V) < 10.8mΩ 100% UIS Tested 100% Rg Tested D SOIC-8 D G G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±20 V 15 ID TA=70°C Maximum 30 12 A IDM 110 Avalanche Current C IAS, IAR 27 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 36 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev1: September 2010 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4476A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 110 100 nA 1.98 2.5 V 6.4 7.7 10 12 VGS=4.5V, ID=12A 8.6 10.8 mΩ 45 1 V 4 A VGS=10V, ID=15A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=15A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 IGSS Coss Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ A 0.74 mΩ S 920 1150 1380 pF VGS=0V, VDS=15V, f=1MHz 125 180 235 pF 60 105 150 pF VGS=0V, VDS=0V, f=1MHz 0.55 1.1 1.65 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 20 24 nC Qg(4.5V) Total Gate Charge 7.6 9.5 11.4 nC 2 2.7 3.2 nC 3 5 7 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=15A VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω 6.5 ns 2 ns 17 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=15A, dI/dt=500A/µs 7 3.5 8.7 10.5 ns Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs 11 13.5 16 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using