AO4476A
30V N-Channel MOSFET
General Description
Product Summary
The AO4476A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is suitable for use as a
high side switch in SMPS and general purpose
applications.
VDS
30V
15A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 7.7mΩ
RDS(ON) (at VGS = 4.5V)
< 10.8mΩ
100% UIS Tested
100% Rg Tested
D
SOIC-8
D
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
C
Units
V
±20
V
15
ID
TA=70°C
Maximum
30
12
A
IDM
110
Avalanche Current C
IAS, IAR
27
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
36
mJ
Pulsed Drain Current
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev1: September 2010
3.1
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
www.aosmd.com
-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4476A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
110
100
nA
1.98
2.5
V
6.4
7.7
10
12
VGS=4.5V, ID=12A
8.6
10.8
mΩ
45
1
V
4
A
VGS=10V, ID=15A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=15A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate Threshold Voltage
Units
V
1
IGSS
Coss
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
A
0.74
mΩ
S
920
1150
1380
pF
VGS=0V, VDS=15V, f=1MHz
125
180
235
pF
60
105
150
pF
VGS=0V, VDS=0V, f=1MHz
0.55
1.1
1.65
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16
20
24
nC
Qg(4.5V) Total Gate Charge
7.6
9.5
11.4
nC
2
2.7
3.2
nC
3
5
7
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=15A
VGS=10V, VDS=15V, RL=1Ω,
RGEN=3Ω
6.5
ns
2
ns
17
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=15A, dI/dt=500A/µs
7
3.5
8.7
10.5
ns
Qrr
Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs
11
13.5
16
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
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