AO4485_102

AO4485 40V P-Channel MOSFET General Description Product Summary The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. VDS (V) = -40V ID = -10A RDS(ON) < 15mΩ RDS(ON) < 20mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS -40 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current ±20 VGS TA=25°C TA=70°C ID B Avalanche Current G Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation A TA=70°C G Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. -9 -8 IAR -28 EAR 118 1.7 2.0 1.1 RθJA RθJL -55 to 150 Typ 31 59 16 A mJ 3.1 TJ, TSTG Symbol t ≤ 10s Steady State Steady State -10 -120 PD V -12 IDM Units V Max 40 75 24 W °C Units °C/W °C/W °C/W www.aosmd.com AO4485 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = -250µA, VGS = 0V -40 -1 TJ = 55°C -5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V Gate Threshold Voltage VDS = VGS ID = -250µA -1.7 ID(ON) On state drain current VGS = -10V, VDS = -5V -120 ±100 VGS = -10V, ID = -10A Static Drain-Source On-Resistance TJ=125°C 25 Diode Forward Voltage IS = -1A,VGS = 0V Maximum Body-Diode Continuous Current -0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance 2500 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge 2.5 Units µA nA V A 20 VSD Rg 15 23 IS Reverse Transfer Capacitance 12.5 16 VDS = -5V, ID = -10A Output Capacitance -2.5 19 Forward Transconductance Crss -1.9 VGS = -4.5V, ID = -8A gFS Coss Max V VDS = -40V, VGS = 0V VGS(th) RDS(ON) Typ mΩ S -1 V -3 A 3000 pF 260 pF 180 pF 4 6 Ω 42 55 nC 18.6 nC 7 nC Gate Drain Charge 8.6 nC Turn-On DelayTime 9.4 ns 20 ns 55 ns Qgs Gate Source Charge Qgd tD(on) VGS=-10V, VDS=-20V, ID=-10A VGS=-10V, VDS=-20V, RL= 2Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-10A, dI/dt=100A/µs 38 Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs 47 Body Diode Reverse Recovery Time 30 ns 49 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. 0 F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C. Rev1: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4485 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 VDS= -5V -4.5V 100 80 -10V -4V 60 ID(A) ID (A) 80 60 40 -3.5V 40 125°C 20 20 VGS= -3V 25°C 0 0 0 1 2 3 4 5 1.5 20 2.5 3 3.5 4 4.5 5 Normalized On-Resistance 1.8 VGS= -4.5V 18 RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 16 14 VGS= -10V 12 10 VGS= -10V ID= -10A 1.6 1.4 VGS= -4.5V ID= -7.5A 1.2 1.0 0.8 0 4 I12 dI/dt=100A/µs 20 F=-6.5A,16 8 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 35 1E+02 ID= -10A 1E+01 30 25 -IS (A) RDS(ON) (mΩ ) 1E+00 125°C 1E-01 125°C 1E-02 20 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-03 25°C 25°CPRODUCT DESIGN, OUT OF 15 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1E-05 10 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4485 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 VDS= 15V ID= -10A 3500 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 3000 2500 2000 1500 Crss 1000 Coss 2 500 0 0 0 5 10 15 20 25 30 35 40 0 45 10 20 30 40 -VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 1000 TJ(Max)=150°C TA=25°C 100 10 100µs 1 1ms 10ms 100ms 10s RDS(ON) limited 0.1 TJ(Max)=150°C TA=25°C DC 0.01 0.1 Power (W) -ID (Amps) 10µs -VDS (Volts) Zθ JA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 1 0.0001 IF=-6.5A, dI/dt=100A/µs 10 100 1 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com