AO3402-VB

AO3402 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 10 V 6.5 0.033 at VGS = 4.5 V 6.0 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.5 nC APPLICATIONS • DC/DC Converter D TO-236 (SOT-23) G 1 3 S G D 2 S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current Limit 30 ± 20 6.5a 6.0 5.3 5.0 25 1.4 ID IDM IS Unit V A 0.9b, c 1.7 1.1 PD 1.1b, c 0.7b, c - 55 to 150 260 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter t≤5s Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 130 °C/W. Symbol RthJA RthJF Typical 90 60 Maximum 115 75 Unit °C/W 服务热线：400-655-8788 1 AO3402 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 31 mV/°C -5 0.7 1.1 2.0 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 10 µA A VGS = 10 V, ID = 3.2 A 0.030 VGS = 4.5 V, ID = 2.8 A 0.033 VDS = 15 V, ID = 4.8 A 11 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 335 VDS = 15 V, VGS = 0 V, f = 1 MHz 45 VDS = 15 V, VGS = 10 V, ID = 3.4 A 4.5 6.7 2.1 3.2 17 0.85 VDS = 15 V, VGS = 4.5 V, ID = 3.4 A VDD = 15 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 0.8 4.4 8.8 12 20 50 75 12 20 tf 22 35 td(on) 5 10 12 20 10 15 5 10 td(off) tr td(off) nC 0.65 f = 1 MHz td(on) tr pF VDD = 15 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 1.4 15 IS = 2.7 A, VGS = 0 V IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 10 20 ns 5 10 nC 6 4 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 AO3402 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 15 VGS = 10 V thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 6 VGS = 3 V 3 TC = - 55 °C 2 TC = 25 °C 1 3 TC = 125 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.5 3.0 3.5 300 Ciss 250 0.05 0.04 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.0 Transfer Characteristics 0.10 VGS = 4.5 V 0.03 VGS = 10 V 200 150 100 Coss 0.02 50 Crss 0 0.00 0 3 6 9 12 0 15 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 1.6 1.5 ID = 3.4 A ID = 3.2 A VGS = 10 V 8 1.4 VDS = 7.5 V 6 VDS = 24 V 4 VDS = 15 V 2 1.3 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 1.0 VGS - Gate-to-Source Voltage (V) 1.2 1.1 1.0 0.9 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge 4 5 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 AO3402 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.14 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 3.2 A 10 TJ = 150 °C TJ = 25 °C 1 0.12 0.10 TJ = 125 °C 0.08 0.06 TJ = 25 °C 0.04 0.1 0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 10 25 2.2 20 Power (W) VGS(th) (V) 2.0 ID = 250 µA 1.8 15 10 1.6 5 1.4 1.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 100 I D - Drain Current (A) Limited by RDS(on)* 10 100 µs 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 AO3402 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 2.0 1.5 Package Limited 4 Power (W I D - Drain Current (A) 5 3 1.0 0.5 2 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 AO3402 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot . 服务热线：400-655-8788 6 AO3402 www.VBsemi.com SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 服务热线：400-655-8788 7 AO3402 www.VBsemi.com 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index 8 服务热线：400-655-8788  AO3402 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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