AO4614BL_103

AO4614B 40V Dual P + N-Channel MOSFET General Description Product Summary The AO4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. N-Channel VDS (V) = 40V, ID = 6A (VGS=10V) RDS(ON) < 30mΩ (VGS=10V) < 38mΩ (VGS=4.5V) P-Channel -40V -5A (VGS=-10V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested < 45mΩ (VGS= -10V) < 63mΩ (VGS= -4.5V) SOIC-8 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Max n-channel 40 VGS TA=25°C Continuous Drain Current A TA=70°C Pulsed Drain Current B S1 n-channel Pin1 Gate-Source Voltage G1 p-channel Max p-channel -40 ±20 ±20 6 -5 ID 5 -4 IDM 30 -30 Units V V A B IAR 14 -20 Repetitive avalanche energy L=0.1mH B EAR 9.8 20 2 2 1.28 1.28 -55 to 150 -55 to 150 Avalanche Current Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJL RθJA RθJL mJ W °C Device n-ch n-ch n-ch Typ 48 74 35 Max 62.5 110 50 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 74 35 62.5 110 50 °C/W °C/W °C/W www.aosmd.com AO4614B N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 30 ±100 VGS=10V, ID=6A TJ=125°C VGS=4.5V, ID=5A 2.5 3 24 30 36 45 30 38 Forward Transconductance VDS=5V, ID=6A 19 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 410 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=20V, ID=6A VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs nA V 516 mΩ S 1 V 2 A 650 pF 82 pF 43 pF 4.6 Ω 8.9 10.8 nC 4.3 5.6 nC 2.4 nC 1.4 nC 6.4 ns 3.6 ns 16.2 ns 6.6 IF=6A, dI/dt=100A/µs µA A gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VDS=40V, VGS=0V VGS(th) RDS(ON) Typ 18 ns 24 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. 9 C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 12 D. The static characteristics in Figures 1 to 6 are obtained using