AO4614L

AO4614B Complementary Enhancement Mode Field Effect Transistor General Description The AO4614B/L uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. AO4614B and AO4614BL are electrically identical. -RoHS Compliant -AO4614BL is Halogen Free Features n-channel VDS (V) = 40V, RDS(ON)< 30mΩ RDS(ON)< 38mΩ p-channel VDS (V) = -40V, RDS(ON)< 45mΩ RDS(ON)< 63mΩ D2 ID = 6A (VGS=10V) (VGS=10V) (VGS=4.5V) ID = -5A (VGS=-10V) (VGS= -10V) (VGS= -4.5V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.1mH Power Dissipation TA=25°C TA=70°C B p-channel Max p-channel -40 ±20 -5 -4 -30 -20 20 2 1.28 -55 to 150 mJ W °C A Units V V TA=25°C TA=70°C ID IDM IAR EAR PD TJ, TSTG 6 5 30 14 9.8 2 1.28 -55 to 150 Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74 35 48 74 35 Max 62.5 110 50 62.5 110 50 Units °C/W °C/W °C/W °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B N Channel Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions ID=250µA, VGS=0V VDS=40V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=6A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1.7 30 24 36 30 19 0.76 1 2 516 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 82 43 4.6 8.9 VGS=10V, VDS=20V, ID=6A 4.3 2.4 1.4 6.4 VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω IF=6A, dI/dt=100A/µs 2 Min 40 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 ±100 2.5 3 30 45 38 µA nA V A mΩ S V A pF pF pF Ω DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 650 SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 10.8 5.6 nC nC nC nC ns ns ns ns 3.6 16.2 6.6 18 10 24 Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs ns nC A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. 9 D. The static characteristics in Figures 1 to 6 are obtained using