AO7801

AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7801 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 520mΩ (VGS = -4.5V) RDS(ON) < 700mΩ (VGS = -2.5V) RDS(ON) < 950mΩ (VGS = -1.8V) SC70-6L (SOT-363) D2 D1 Pin1 Bottom View Top View S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 G2 G1 S2 S1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain A Current TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Rev 3: April 2015 Maximum -20 Units V ±8 V -0.6 ID -0.48 IDM -3 A 0.3 PD W 0.19 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL www.aosmd.com Typ 360 400 300 °C Max 415 460 350 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -3 TJ=55°C µA V 400 520 542 700 VGS=-2.5V, ID=-0.5A 540 700 mΩ VGS=-1.8V, ID=-0.4A 700 950 mΩ TJ=125°C Forward Transconductance VDS=-5V, ID=-0.6A Diode Forward Voltage IS=-0.5A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge A 1.7 -0.86 114 VGS=0V, VDS=-10V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-0.6A mΩ S -1 V -0.4 A 140 17 pF pF 14 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs µA ±10 gFS Output Capacitance -5 -0.9 VSD Coss Units -0.6 VGS=-4.5V, ID=-0.6A Static Drain-Source On-Resistance Max V VDS=-16V, VGS=0V IDSS RDS(ON) Typ pF 12 17 1.44 1.8 Ω nC 0.14 nC Qgd Gate Drain Charge 0.35 nC tD(on) Turn-On DelayTime 6.5 ns 6.5 ns 18.2 ns VGS=-4.5V, VDS=-10V, RL=16.7Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-0.6A, dI/dt=100A/µs 10 Qrr Body Diode Reverse Recovery Charge IF=-0.6A, dI/dt=100A/µs 3 Body Diode Reverse Recovery Time 5.5 ns 13 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: April 2015 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 6 -6V -10V 25° -4.5V VDS=-5V -4V 3 125°C -3.5V -ID(A) -ID (A) 4 -3V 2 -2.5V 2 1 VGS=-2.0V 0 0 0 1 2 3 4 5 0 0.5 -VDS (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics 900 1.6 VGS=-1.8V Normalized On-Resistance VGS=-1.8V 800 RDS(ON) (mΩ) 1 700 VGS=-2.5V 600 500 VGS=-4.5V 400 300 ID=-0.4A 1.4 VGS=-2.5V ID=-0.5A 1.2 VGS=-4.5V ID=-0.6A 1 0.8 0 1 2 3 4 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+00 900 ID=-0.6A 800 1.0E-01 1.0E-02 600 -IS (A) RDS(ON) (mΩ) 125°C 700 125° 500 25°C 1.0E-03 1.0E-04 25° 400 1.0E-05 300 0 2 4 6 8 10 1.0E-06 0.0 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev 3: April 2015 www.aosmd.com 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 5 VDS=-10V ID=-0.6A Ciss 150 Capacitance (pF) -VGS (Volts) 4 3 2 100 Coss 50 1 0 0.0 0.5 1.0 1.5 Crss 0 2.0 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100µs 10 10ms 0.1s 1s 10s 20 TJ(Max)=150° C 12 Power (W) -ID (Amps) 1ms 0.10 15 14 TJ(Max)=150°C, TA=25°C 1.00 10 -VDS (Volts) Figure 8: Capacitance Characteristics 10.00 RDS(ON) limited 5 DC 8 6 4 0.01 2 0 0.001 0.00 0.1 1 10 100 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=415°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev 3: April 2015 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveform s RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 3: April 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5